IRF7353D2TRPBF [INFINEON]
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| 型号： | IRF7353D2TRPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 晶体 肖特基二极管 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 |
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PD- 93809
IRF7353D2
FETKY MOSFET / Schottky Diode
● Co-Pack HEXFET® Power MOSFET and
Schottky Diode
● Ideal For Buck Regulator Applications
● N-Channel HEXFET power MOSFET
● Low VF Schottky Rectifier
● Generation 5 Technology
● SO-8 Footprint
1
8
7
K
K
A
VDSS = 30V
2
A
R
DS(on) = 0.029Ω
3
4
6
5
S
D
D
G
Schottky VF = 0.52V
Top View
Description
The FETKY family of Co-Pack HEXFET® Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5
HEXFET power MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combinining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
SO-8
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current ➃
6.5
A
5.2
Pulsed Drain Current ➀
Power Dissipation ➃
52
PD @TA = 25°C
PD @TA = 70°C
2.0
W
1.3
Linear Derating Factor
16
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
-5.0
dv/dt
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient ꢀ
62.5
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A
➂ ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➃ Pulse width ≤ 300µs; duty cycle ≤ 2%
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
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MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.7A
VDS = VGS, ID = 250µA
VDS = 24V, ID = 5.8A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = 20V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
0.023 0.029
0.032 0.046
Ω
VGS(th)
gfs
Gate Threshold Voltage
—
14
—
—
—
—
22
—
—
V
S
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
1.0
25
µA
nA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
100
-100
33
VGS = -20V
Qg
ID = 5.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.6 3.9
6.4 9.6
nC VDS = 24V
VGS = 10V (see figure 8)
8.1
8.9
26
12
13
39
26
—
—
—
VDD = -5V
ID = 1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
18
RD = 15Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
650
320
130
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
—
—
—
—
—
—
—
2.5
30
A
ISM
VSD
trr
0.78 1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
45
58
68
87
ns
nC
Qrr
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
IF (av)
Max. Average Forward Current
3.2
A
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
2.0
ISM
Max. peak one cycle Non-repetitive
Surge current
200
5µs sine or 3µs Rect. pulse
Following any rated
20
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
If = 3.0, Tj = 25°C
VFM
Max. Forward voltage drop
0.57
0.77
V
If = 6.0, Tj = 25°C
0.52
If = 3.0, Tj = 125°C
0.79
If = 6.0, Tj = 125°C
.
Irm
Max. Reverse Leakage current
0.30
mA
Vr = 30V
Tj = 25°C
37
Tj = 125°C
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
310 pF
4900 V/µs
Vr = 5Vdc (100kHz to 1 MHz) 25°C
Rated Vr
dv/dt
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7353D2
Power MOSFET Characteristics
100
10
1
100
VGS
15V
VGS
TOP
TOP
15V
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
10
3.0V
3.0V
20µs PULSE WIDTH
TJ = 25°C
20µs PULSE WIDTH
TJ = 150°C
A
A
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
5.8A
=
I
D
TJ = 25°C
TJ = 150°C
10
VD S = 10V
20µs PULSE WIDTH
5.0A
V
GS
= 10V
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
3.5
4.0
4.5
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
G S
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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IRF7353D2
Power MOSFET Characteristics
0.040
0.036
0.032
0.028
0.024
0.12
V
= 4.5V
GS
0.10
0.08
0.06
0.04
0.02
0.00
I
= 5.8A
D
V
= 10V
GS
0.020
0
A
A
10
20
30
40
0
3
6
9
12
15
I
, Drain Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 5. Typical On-Resistance Vs. Drain
Fig 6. Typical On-Resistance Vs. Gate
Current
Voltage
1200
20
V
C
C
C
= 0V ,
f = 1M Hz
G S
iss
I
D
= 5.8A
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
V
= 15V
DS
rss
oss
gd
16
12
8
900
600
300
0
C
iss
C
oss
C
rss
4
0
A
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 7. Typical Capacitance Vs.
Fig 8. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRF7353D2
Power MOSFET Characteristics
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
T
= 150°C
J
10
T
= 25°C
J
V
= 0V
GS
1.4
A
1
0.4
0.6
0.8
1.0
1.2
1.6
V
, Source-to-Drain Voltage (V)
S D
Fig 10. Typical Source-Drain Diode
Forward Voltage
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IRF7353D2
Schottky Diode Characteristics
100
10
100
TJ = 150°C
125°C
100°C
1
75°C
50°C
0.1
0.01
10
25°C
TJ = 150°C
TJ = 125°C
TJ 25°C
A
0.001
0
5
10
15
20
25
30
Reverse Voltage - V R (V)
=
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
Voltage
1
160
V r = 80% R ated
= 6 2.5°C/W
R
thJA
Sq uare wave
140
120
100
80
D C
0.1
60
0.0
0.2
0.4
0.6
0.8
1.0
D
D
D
D
D
= 3/4
= 1/2
=1/3
= 1/4
= 1/5
40
Forward Voltage Drop - VF (V)
20
A
0
Fig. 12 - Typical Forward Voltage Drop
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Characteristics
Average Forw ard Current - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7353D2
SO-8 Package Details
INCH ES
M ILLIM ET ERS
D IM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
- B -
A
.0532
.0040
.014
A1
B
8
1
7
2
6
3
5
4
5
H
E
C
D
E
.0075
.189
.0098
.196
0.25 (.010)
M
A M
- A -
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K x 45°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
L
A1
B
8X
θ
0.25 (.010)
M
C A S B S
RECOM MENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIM ENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIM ENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. OUTLINE CONFORM S TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE M OLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.27 ( .050 )
3X
SO-8 Part Marking
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IRF7353D2
TER M IN AL NU M BER 1
SO-8 Tape and Reel
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IREC TIO N
N O TES:
1 . C O N T RO LLIN G DIM E N SIO N : M ILLIM ETER .
2 . ALL DIM ENSIO N S AR E SH O W N IN M ILLIM ET ER S(IN C HES).
3 . O U T LIN E C O N FO R M S TO EIA-4 81 & EIA-541.
330.00
(12.992)
M AX.
14 .40 ( .566 )
12 .40 ( .488 )
NO TES :
1. CO N TRO LLING D IM EN SIO N : M ILLIM ETER .
2. O UTLINE C O N FO RM S TO EIA-481 & EIA-54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
11/99
8
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