IRF7380PBF-1_15 [INFINEON]
Industry-standard pinout SO-8 Package;
| 型号： | IRF7380PBF-1_15 |
| 厂家： | 
Infineon |
| 描述： | Industry-standard pinout SO-8 Package |
| 文件： | 总9页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7380TRPbF-1
HEXFET® Power MOSFET
VDS
80
73
V
1
2
8
S1
G1
D1
RDS(on) max
(@VGS = 10V)
Qg (typical)
7
m
Ω
D1
3
4
6
S2
D2
15
nC
A
5
ID
G2
D2
3.6
(@TA = 25°C)
SO-8
Top View
Applications
l High frequency DC-DC converters
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Form
Tape and Reel
Base Part Number
Package Type
Orderable Part Number
Quantity
4000
IRF7380TRPbF-1
IRF7380PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
Units
V
VDS
80
± 20
3.6
2.9
29
VGS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I @ T = 25°C
D
D
A
I
I
@ T = 100°C
A
A
DM
P
@T = 25°C
Maximum Power Dissipation
Linear Derating Factor
2.0
W
D
A
0.02
W/°C
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and
2.3
-55 to + 150
V/ns
°C
T
T
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
42
Units
°C/W
Rθ
Rθ
Junction-to-Drain Lead
JL
JA
Junction-to-Ambient (PCB Mount)
–––
62.5
Notes through are on page 9
1
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IRF7380TRPbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
80
–––
–––
V
VGS = 0V, ID = 250μA
––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
–––
2.0
61
73
4.0
20
VGS = 10V, ID = 2.2A
VGS(th)
–––
–––
–––
–––
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
μA VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
nA VGS = 20V
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
4.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
VDS = 25V, ID = 2.2A
Qg
Total Gate Charge
15
23
ID = 2.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.9
4.5
9.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VDS = 40V
VGS = 10V
VDD = 40V
ID = 2.2A
Ω
RG = 24
td(off)
tf
Turn-Off Delay Time
Fall Time
41
ns
17
VGS = 10V
VGS = 0V
VDS = 25V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
660
110
15
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
710
72
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
140
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
75
Units
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
mJ
A
2.2
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
I
I
–––
–––
3.6
A
S
(Body Diode)
showing the
G
Pulsed Source Current
–––
–––
29
A
integral reverse
SM
(Body Diode)
p-n junction diode.
V
Diode Forward Voltage
–––
–––
–––
–––
50
1.3
–––
–––
V
T
T
= 25°C, I = 2.2A, V
= 0V
GS
SD
J
S
t
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
= 25°C, I = 2.2A, VDD = 40V
F
rr
J
di/dt = 100A/μs
Q
t
110
rr
Intrinsicturn-ontimeis negligible(turn-onis dominatedbyLS+LD)
on
2
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IRF7380TRPbF-1
100
10
1
100
10
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
TOP
TOP
BOTTOM
BOTTOM
1
3.7V
0.1
3.7V
0.01
0.001
20μs PULSE WIDTH
Tj = 150°C
20μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
2.5
3.6A
=
I
D
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
V
J
1
0
= 15V
DS
20μs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
3.0
4.0
5.0
6.0
7.0
TJ, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRF7380TRPbF-1
12
10
8
100000
10000
1000
100
V
C
= 0V,
f = 1 MHZ
GS
I
= 2.1A
D
= C + C , C SHORTED
V
V
V
= 64V
= 40V
= 16V
iss
gs gd ds
DS
DS
DS
C
= C
gd
rss
C
= C + C
oss
ds gd
C
iss
6
C
oss
4
C
rss
10
2
1
0
1
10
100
0
2
4
6
8
10 12 14 16
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
°
T = 25
C
J
100μsec
°
T = 150
C
J
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
100
V
= 0 V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
1
10
1000
VSD, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7380TRPbF-1
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
0.02
0.01
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
10
J
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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October 16, 2014
IRF7380TRPbF-1
95
90
85
80
75
70
65
60
55
50
800
700
600
500
400
300
200
100
0
V
= 10V
GS
I
= 3.6A
D
0
5
10
15
20
25
30
3.0
5.0
7.0
9.0
11.0
13.0
15.0
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3μF
VGS
.2μF
12V
Q
Q
GD
GS
+
V
200
DS
D.U.T.
-
V
I
G
D
V
GS
TOP
1.0A
1.8A
2.2A
3mA
Charge
160
120
80
40
0
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
25
50
75
100
125
150
20V
Ω
0.01
t
p
Starting TJ, Junction Temperature (°C)
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7380TRPbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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October 16, 2014
IRF7380TRPbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at:http://www.irf.com/package/
8
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October 16, 2014
IRF7380TRPbF-1
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 31mH, RG = 25Ω, IAS = 2.2A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 2.2A, di/dt ≤ 220A/μs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.
Revision History
Date
Comments
•
•
Corrected part number from" IRF7380PbF-1" to "IRF7380TRPbF-1" -all pages
Removed the "IRF7380PbF-1" bulk part number from ordering information on page1
10/16/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
9
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October 16, 2014
相关型号：
IRF7389PBF-1
Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
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