IRF7416QTRPBF [INFINEON]
Transistor,;
| 型号： | IRF7416QTRPBF |
| 厂家： | 
Infineon |
| 描述： | Transistor, |
| 文件： | 总9页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96124
IRF7416QPbF
HEXFET® Power MOSFET
l
l
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l
l
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Advanced Process Technology
UltraLowOn-Resistance
P Channel MOSFET
A
1
2
3
4
8
D
S
S
VDSS = -30V
7
D
SurfaceMount
6
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified
Lead-Free
S
G
D
5
D
R
DS(on) = 0.02Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
SO-8
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ - 10V
Pulsed Drain Current
-10
-7.1
-45
A
PD @TA = 25°C
Power Dissipation
2.5
W
mW/°C
V
Linear Derating Factor
0.02
± 20
370
-5.0
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mJ
dv/dt
TJ,TSTG
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambientꢀ
50
°C/W
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1
08/29/07
IRF7416QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30
-0.024 V/°C Reference to 25°C, ID = -1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
0.020
0.035
-1.0
5.6
-1.0
-25
-100
100
VGS = -10V, ID = -5.6A
VGS = -4.5V, ID = -2.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -2.8A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
61
8.0
22
92
12
32
ID = -5.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -24V
VGS = -10V, See Fig. 6 and 9
18
49
59
60
1700
890
410
VDD = -15V
ID = -5.6A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 2.7Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
-3.1
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-45
p-n junction diode.
TJ = 25°C, IS = -5.6A, VGS = 0V
TJ = 25°C, IF = -5.6A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
-1.0
56 85
99 150
V
ns
nC
Qrr
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 25mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -5.6A. (See Figure 12)
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
2
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IRF7416QPbF
100
10
1
100
10
1
VGS
- 15V
- 10V
VGS
- 15V
- 10V
TOP
TOP
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
-3.0V
-3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
A
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.0
I
= -5.6A
D
T = 25°C
J
1.5
1.0
0.5
0.0
T = 150°C
J
VDS = -10V
20µs PULSE WIDTH
5.5A
V
= -10V
GS
A
3.0
3.5
4.0
4.5
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
, Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7416QPbF
4000
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -5.6A
GS
iss
rss
oss
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
V
= -24V
= -15V
DS
= C + C
ds
gd
V
DS
3000
2000
1000
0
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
1ms
T = 150°C
J
10
T = 25°C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
GS
= 0V
1
0.1
A
1
10
100
0.4
0.6
0.8
1.0
1.2
-V , Drain-to-Source Voltage (V)
DS
-V , Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7416QPbF
RD
VDS
Q
Q
G
VGS
D.U.T.
-10V
Q
RG
-
GS
GD
+
VDD
V
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
t
t
r
t
t
f
d(on)
d(off)
50KΩ
V
.2µF
12V
GS
.3µF
10%
-
V
+
DS
D.U.T.
V
GS
90%
-3mA
V
DS
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7416QPbF
1000
800
600
400
200
0
I
L
D
V
DS
TOP
-2.5A
-4.5A
BOTTOM -5.6A
D.U.T
R
G
V
DD
A
I
AS
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
o
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
6
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IRF7416QPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V ] ***
GS
[
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
SD
]
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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7
IRF7416QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRF7416QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2007
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9
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