IRF7416 [INFINEON]
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm); 功率MOSFET （ VDSS = -30V ， RDS（ON） = 0.02ohm ）
| 型号： | IRF7416 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm) |
| 文件： | 总9页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1356D
IRF7416
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
A
D
1
2
8
S
S
VDSS = -30V
7
D
l Surface Mount
3
6
5
S
D
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
4
G
D
RDS(on) = 0.02Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
-10
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ - 10V
Pulsed Drain Current
A
-7.1
-45
PD @TA = 25°C
Power Dissipation
2.5
W
mW/°C
V
Linear Derating Factor
0.02
± 20
370
-5.0
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mJ
dv/dt
TJ,TSTG
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambientꢀ
–––
50
°C/W
8/25/97
IRF7416
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30 ––– –––
––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.020
––– ––– 0.035
-1.0 ––– –––
5.6 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -10V, ID = -5.6A
VGS = -4.5V, ID = -2.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -2.8A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 61
––– 8.0
––– 22
92
12
32
ID = -5.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
pF
VDS = -24V
VGS = -10V, See Fig. 6 and 9
VDD = -15V
––– 18 –––
––– 49 –––
––– 59 –––
––– 60 –––
––– 1700 –––
––– 890 –––
––– 410 –––
ID = -5.6A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 2.7Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– -3.1
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– -45
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.0
––– 56 85
––– 99 150
V
TJ = 25°C, IS = -5.6A, VGS = 0V
TJ = 25°C, IF = -5.6A
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 25mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -5.6A. (See Figure 12)
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
IRF7416
1 0 0
1 0
1
1 0 0
1 0
1
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
TOP
TOP
BOTT OM - 3.0V
BOTT OM - 3.0V
-3.0V
-3.0V
20µs P ULSE WIDTH
20µs P ULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
A
0. 1
1
1 0
0. 1
1
1 0
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
D S
D S
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1 0 0
1 0
1
2. 0
I
= -5.6A
D
T
= 25°C
J
1. 5
1. 0
0. 5
0. 0
T
= 15 0°C
J
V
= -1 0V
DS
20µs P ULS E W IDTH
V
= -10V
GS
A
5. 5 A
3. 0
3. 5
4. 0
4. 5
5. 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
TJ , Junction Temperature (°C)
-VG S , Ga te-to-So urce Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7416
4 0 0 0
2 0
1 6
1 2
8
V
= 0V,
f = 1M Hz
I
= -5.6A
D
GS
iss
C
C
C
= C
= C
= C
+ C
+ C
,
C
ds
SHORTE D
gs
gd
d s
gd
rss
oss
V
V
= -24V
= -15V
DS
DS
gd
3 0 0 0
2 0 0 0
C
iss
C
o s s
1 0 0 0
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
A
A
1
1 0
1 0 0
0
2 0
4 0
6 0
8 0
1 0 0
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
T
= 150°C
J
1 0
T
= 25°C
J
1ms
10ms
°
T = 25 C
A
°
T = 150 C
J
Single Pulse
V
= 0V
GS
1
A
0.1
1
10
100
0. 4
0. 6
0. 8
1. 0
1. 2
-V
, Drain-to-Source Voltage (V)
DS
-VS D , Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRF7416
RD
VDS
Q
Q
G
VGS
D.U.T.
-10V
Q
RG
-
+
GS
GD
VDD
V
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
t
t
r
t
t
f
d(on)
d(off)
50KΩ
V
.2µF
GS
12V
.3µF
10%
-
V
+
DS
D.U.T.
V
GS
90%
-3mA
V
DS
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7416
1000
800
600
400
200
0
I
L
D
V
D S
TOP
-2.5A
-4.5A
BOTTOM -5.6A
R
D .U .T
AS
G
V
D D
A
I
D R IVER
-20V
0 .0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
o
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
IRF7416
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V ] ***
GS
[
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
[ISD]
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
IRF7416
Package Outline
SO8 Outline
INCHES
MILLIMETERS
DIM
D
MIN
MAX
.0688
.0098
.018
MIN
MAX
1.75
5
-
B -
A
.0532
.0040
.014
1.35
0.10
0.36
0.19
4.80
3.81
A1
B
0.25
0.46
0.25
4.98
3.99
8
1
7
6
3
5
4
5
H
E
A
0.25 (.010)
M
A M
-
-
C
D
E
.0075
.189
.0098
.196
2
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 45°
6X
e 1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
-
C -
0.10 (.004)
6
C
8X
L
8X
A1
L
B
8X
θ
0.25 (.010)
M
C A S B S
R E C O M M E N D E D F O O T P R I N T
N O T E S :
1. DIMENSIONING AND TOLERANCING PER ANSI Y14. 5M-1982.
2. CONTROLLING DIMENSION INCH.
0.72 (.028
8X
)
:
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46
( .255 )
1. 78 (. 070)
8X
5
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
MOLD PROTRUSIONS NOT TO EXCEED 0. 25 (. 006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO
A
SUBSTRATE..
6
1.27
(
.050
)
3X
Part Marking Information
SO8
EXAM PLE : THIS IS AN IRF7 101
DATE CODE (YW W )
LAST DIGIT OF THE YEAR
W EEK
Y
=
W W
=
3 12
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7 101
W AFER
LOT CODE
PART NUM BER
TOP
(LAST
4 DIGITS)
BOTTOM
IRF7416
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R
1
12 .3
11 .7
(
(
.48 4
.46 1
)
)
8 .1
7 .9
(
(
.3 18
.3 12
)
)
F E ED D IR E C T IO N
N OTES:
1 . CON TRO LL IN G D IM EN SION : M ILLIM ETER.
2 . ALL DIM ENSIO NS AR E SHOW N IN M ILL IM ETER S(INC HES).
3 . OUTL IN E C ONFO RM S TO EIA-48 1 & EIA-5 41 .
33 0. 00
(12 .99 2)
M A X.
1 4. 40
1 2. 40
(
(
.5 66
.4 88
)
)
N O T ES
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 E IA -54 1.
:
&
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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