IRF7416PBF-1 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRF7416PBF-1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总9页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7416PbF-1
HEXFET® Power MOSFET
VDS
-30
0.020
61
V
Ω
A
1
2
3
4
8
S
S
D
RDS(on) max
(@VGS = -10V)
Qg (typical)
7
6
5
D
nC
A
S
G
D
D
ID
-10
(@TA = 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Tube/Bulk
Tape and Reel
Base Part Number
Package Type
Orderable Part Number
Quantity
95
4000
IRF7416PbF-1
IRF7416TRPbF-1
IRF7416PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
@ TA = 70°C
-10
-7.1
-45
D
D
A
DM
W
W/°C
V
Power Dissipation
2.5
P
@TA = 25°C
D
Linear Derating Factor
Gate-to-Source Voltage
0.02
± 20
V
GS
EAS
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
370
-5.0
mJ
dv/dt
V/ns
T
T
J
-55 to + 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Max.
Units
RθJA
Junction-to-Ambient
50
°C/W
1
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IRF7416PbF-1
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
V(BR)DSS
-30 ––– ––– VGS = 0V, ID = -250μA
V
V
/ T
(BR)DSS Δ
Δ
Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
J
––– ––– 0.020
––– ––– 0.035
-1.0 ––– -2.04
V
V
GS = -10V, ID = -5.6A
GS = -4.5V, ID = -2.8A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
IDSS
Gate Threshold Voltage
V
S
VDS = VGS, ID = -250μA
Forward Transconductance
Drain-to-Source Leakage Current
5.6
––– ––– -1.0
––– ––– -25
––– –––
VDS = -10V, ID = -2.8A
V
V
V
DS = -24V, VGS = 0V
DS = -24V, VGS = 0V, TJ = 125°C
GS = -20V
μA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
––– ––– 100
nA
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
61
8.0
22
18
49
59
60
92
12
ID = -5.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDS = -24V
nC
32
VGS = -10V, See Fig. 6 & 9
VDD = -15V
–––
–––
–––
–––
ID = -5.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 2.7Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1700 –––
––– 890 –––
––– 410 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
––– ––– -3.1
A
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– –––
-45
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.0
V
TJ = 25°C, IS = -5.6A, VGS = 0V
TJ = 25°C,IF = -5.6A
di/dt = 100A/μs
–––
–––
56
99
85
ns
nC
Qrr
150
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 25mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -5.6A. (See Figure 12)
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
2
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November 19, 2013
IRF7416PbF-1
100
10
1
100
10
1
VGS
- 15V
- 10V
VGS
- 15V
- 10V
TOP
TOP
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
-3.0V
-3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
A
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.0
I
= -5.6A
D
T = 25°C
J
1.5
1.0
0.5
0.0
T = 150°C
J
VDS = -10V
20μs PULSE WIDTH
5.5A
V
= -10V
GS
A
3.0
3.5
4.0
4.5
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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November 19, 2013
IRF7416PbF-1
4000
3000
2000
1000
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -5.6A
GS
iss
rss
oss
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
V
= -24V
= -15V
DS
= C + C
ds
gd
V
DS
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
100
1
10
100
0
20
40
60
80
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
1ms
T = 150°C
J
10
T = 25°C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
GS
= 0V
1
0.1
A
1
10
100
0.4
0.6
0.8
1.0
1.2
-V , Drain-to-Source Voltage (V)
DS
-V , Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7416PbF-1
RD
VDS
Q
Q
G
VGS
D.U.T.
-10V
Q
RG
-
GS
GD
+
VDD
V
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
t
t
r
t
t
f
d(on)
d(off)
50KΩ
V
.2μF
12V
GS
.3μF
10%
-
V
+
DS
D.U.T.
V
GS
90%
-3mA
V
DS
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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November 19, 2013
IRF7416PbF-1
1000
800
600
400
200
0
I
L
D
V
DS
TOP
-2.5A
-4.5A
BOTTOM -5.6A
D.U.T
R
G
V
DD
A
I
AS
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
o
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
6
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IRF7416PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V ] ***
GS
[
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
SD
]
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
7
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IRF7416PbF-1
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
E
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A= ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
8
November 19, 2013
IRF7416PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-S TD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 19, 2013
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