IRF7464 [INFINEON]
Power MOSFET(Vdss=200V, Rds(on)max=0.73ohm, Id=1.2A); 功率MOSFET （ VDSS = 200V ， RDS（ON）最大值= 0.73ohm ，ID = 1.2A ）
| 型号： | IRF7464 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=200V, Rds(on)max=0.73ohm, Id=1.2A) |
| 文件： | 总8页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93895
IRF7464
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
ID
1.2A
0.73Ω
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
A
A
D
1
2
3
4
8
7
S
S
D
6
5
S
D
D
G
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
1.2
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
1.0
A
10
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
6.8
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes through are on page 8
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1
4/25/00
IRF7464
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.73
3.0 ––– 5.5
Ω
VGS = 10V, ID = 0.72A
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 30V
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 0.72A
ID = 0.72A
gfs
1.1
–––
–––
–––
–––
–––
–––
–––
––– –––
9.5 14
S
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.5 3.8
4.6 6.9
11 –––
9.5 –––
18 –––
15 –––
nC VDS = 160V
VGS = 10V,
VDD = 100V
ID = 0.72A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 280 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
52 –––
14 –––
VDS = 25V
pF
ƒ = 1.0MHz
––– 330 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ꢀ
–––
–––
25 –––
48 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
68
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
1.2
A
EAR
Repetitive Avalanche Energy
0.25
mJ
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typ.
–––
Max.
50
Units
°C/W
RθJA
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
10
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 60 90
––– 130 200
V
TJ = 25°C, IS = 0.72A, VGS = 0V
ns
TJ = 25°C, IF = 0.72A
Qrr
nC di/dt = 100A/µs
2
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IRF7464
10
10
VGS
15V
10V
VGS
15V
10V
TOP
TOP
9.0V
8.0V
7.5V
7.0V
6.5V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
BOTTOM 6.0V
1
6.0V
1
6.0V
0.1
0.01
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
3.0
1.2A
=
I
D
°
T = 150 C
J
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
6.0
6.5
7.0
7.5 8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7464
20
16
12
8
10000
1000
100
I = 0.72A
D
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
V
V
V
= 160V
= 100V
= 40V
iss
gs
gd
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
Crss
10
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
1
0
10
100
1000
0
2
4
6
8
10 12
14
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
1ms
1
°
T = 25 C
J
°
T = 25 C
A
10ms
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.9
0.1
0.1
0.4
1
10
100
1000
0.5
0.6
0.7
0.8
1.0
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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Fig 6. On-Resistance Vs. Drain Current
IRF7464
1.6
1.2
0.8
0.4
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7464
0.70
0.70
0.60
0.50
V
= 10V
GS
0.60
I
= 0.72A
D
0.50
0.0
1.0
2.0
3.0
4.0
5.0
7
8
9
10
11
12
13
14
15
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
200
V
DS
D.U.T.
I
-
D
V
G
TOP
0.5A
0.8A
BOTTOM 1.2A
V
GS
3mA
Charge
160
120
80
I
I
D
G
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
40
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
AS
R
G
+
-
0
V
DD
25
50
75
100
125
150
I
A
20V
°
Starting T , Junction Temperature ( C)
0.01
Ω
t
p
J
I
A S
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7464
SO-8 Package Details
INC HES
M ILLIM ETER S
DIM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075
.189
.0098
.196
0 .25 (.01 0)
M
A M
-
-
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 4 5°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C
-
0.1 0 (.0 04 )
6
C
8 X
L
8X
L
A 1
B
8 X
θ
0.2 5 (.010 )
M
C A S B S
R E C O M M E N D E D F O O T P R IN T
N O T E S :
0.7 2 (.028
8X
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
6.46 ( .2 55
)
1.78 (.0 70 )
8X
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O
A
S U B S TR A TE ..
6
1 .27
(
.05 0
)
3 X
SO-8 Part Marking
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7
IRF7464
SO-8 Tape and Reel
TERM INAL NUM BER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .
2. ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481
& EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566
12.40 ( .488
)
)
NOTES
:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ꢀCoss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 94mH
RG = 25Ω, IAS = 1.2A.
When mounted on 1 inch square copper board, t<10 sec
ISD ≤ 0.72A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 150°C
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Data and specifications subject to change without notice. 4/00
8
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