IRF7474PBF [INFINEON]
HEXFET㈢Power MOSFET; HEXFET㈢Power MOSFET
| 型号： | IRF7474PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢Power MOSFET |
| 文件： | 总8页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 95277
IRF7474PbF
HEXFET® Power MOSFET
Applications
VDSS
100V
RDS(on) max
ID
l Telecom and Data-Com 24 and 48V
input DC-DC converters
l Motor Control
63mW@VGS = 10V 4.5A
l Uninterruptible Power Supply
l Lead-Free
A
A
D
1
2
3
4
8
S
S
S
G
Benefits
7
D
l Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristic
l Improved Avalanche Ruggedness and
Dynamic dv/dt
6
D
5
D
SO-8
Top View
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
Max.
4.5
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
3.6
A
36
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Peak Diode Recovery dv/dt
Operating Junction and
5.5
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
www.irf.com
1
09/21/04
IRF7474PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.5
50
63
mΩ VGS = 10V, ID = 2.7A
––– 5.5
V
VDS = VGS, ID = 250µA
––– ––– 1.0
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 95V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 20V
nA
IGSS
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
6.5
–––
–––
–––
–––
–––
–––
–––
––– –––
27 41
S
VDS = 50V, ID = 2.7A
ID = 2.7A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
10 –––
9.0 –––
14 –––
7.9 –––
16 –––
5.9 –––
nC VDS = 50V
VGS = 10V,
VDD = 50V
ID = 2.7A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1400 –––
––– 100 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 380 –––
––– 68 –––
––– 110 –––
56 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
51
Units
mJ
EAS
IAR
2.7
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
36
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 45 –––
––– 100 –––
V
TJ = 25°C, IS = 2.7A, VGS = 0V
ns
TJ = 25°C, IF = 2.7A
Qrr
2
nC di/dt = 100A/µs
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IRF7474PbF
100
10
1
100
10
1
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
TOP
TOP
BOTTOM 5.5V
BOTTOM 5.5V
5.5V
5.5V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 175 C
°
°
J
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100
4.5A
=
I
D
°
T = 175 C
J
2.0
1.5
1.0
0.5
0.0
10
°
T = 25 C
J
1
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
5.0
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7474PbF
20
16
12
8
100000
I
D
=
2.7A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
ds gd
oss
10000
1000
100
Ciss
Coss
Crss
4
10
0
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
10
100µsec
1msec
1
°
T = 25 C
J
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0 V
GS
1.4
0.1
0.1
0.4
0.6
V
0.8
1.0
1.2
1.6
1
10
100
1000
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7474PbF
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D =
SINGLE PULSE
(THERMAL RESPONSE)
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7474PbF
0.30
0.25
0.20
0.15
0.07
0.06
0.05
0.04
V
= 10V
GS
0.10
0.05
0.00
I
= 2.7A
D
0
20
40
60
80
100
6.0
8.0
10.0
12.0
14.0
16.0
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
120
V
DS
D.U.T.
I
-
D
V
G
TOP
1.2A
2.2A
BOTTOM 2.7A
V
GS
3mA
Charge
100
80
60
40
20
0
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
I
A
2
10V
°
Starting T , Junction Temperature ( C)
0.01Ω
t
J
p
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7474PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WE E K
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLYSITE CODE
LOT CODE
PART NUMBER
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7
IRF7474PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
max. junction temperature.
Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = 2.7A.
ISD ≤ 2.7A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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