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IRF7474TR [INFINEON]

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IRF7474TR
型号： IRF7474TR
厂家： Infineon    Infineon
描述：

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晶体 小信号场效应晶体管 开关 光电二极管
文件： 总8页 (文件大小：225K)
中文：  中文翻译
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PD- 94097  
IRF7474  
HEXFET® Power MOSFET  
Applications  
VDSS  
100V  
RDS(on) max  
ID  
l Telecom and Data-Com 24 and 48V  
input DC-DC converters  
l Motor Control  
63mΩ@VGS = 10V 4.5A  
l Uninterruptible Power Supply  
Benefits  
l Low On-Resistance  
A
A
1
2
8
S
S
D
l High Speed Switching  
l Low Gate Drive Current Due to Improved  
Gate Charge Characteristic  
l Improved Avalanche Ruggedness and  
Dynamic dv/dt  
7
D
3
4
6
S
D
5
G
D
l Fully Characterized Avalanche Voltage  
and Current  
SO-8  
Top V iew  
Absolute Maximum Ratings  
Parameter  
Max.  
4.5  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
3.6  
A
36  
PD @TA = 25°C  
Power Dissipation„  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 20  
Peak Diode Recovery dv/dt †  
Operating Junction and  
5.5  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient „  
–––  
50  
°C/W  
Notes  through †are on page 8  
www.irf.com  
1
9/3/01  
IRF7474  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
100 ––– –––  
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA ƒ  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = 250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
RDS(on)  
VGS(th)  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
–––  
3.5  
50  
63  
mΩ VGS = 10V, ID = 2.7A ƒ  
––– 5.5  
V
VDS = VGS, ID = 250µA  
VDS = 95V, VGS = 0V  
VDS = 80V, VGS = 0V, TJ = 150°C  
VGS = 20V  
––– ––– 1.0  
––– ––– 250  
––– ––– 100  
––– ––– -100  
IDSS  
Drain-to-Source Leakage Current  
µA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
nA  
IGSS  
VGS = -20V  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
Conditions  
VDS = 50V, ID = 2.7A  
ID = 2.7A  
gfs  
6.5  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
––– –––  
27 41  
S
Qg  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
10 –––  
9.0 –––  
14 –––  
7.9 –––  
16 –––  
5.9 –––  
nC VDS = 50V  
VGS = 10V,  
VDD = 50V  
ID = 2.7A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 6.0Ω  
VGS = 10V ƒ  
VGS = 0V  
Ciss  
Coss  
Crss  
Coss  
Coss  
Coss eff.  
Input Capacitance  
––– 1400 –––  
––– 100 –––  
Output Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Output Capacitance  
Effective Output Capacitance  
VDS = 25V  
–––  
––– 380 –––  
––– 68 –––  
––– 110 –––  
56 –––  
pF  
ƒ = 1.0MHz  
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
VGS = 0V, VDS = 80V, ƒ = 1.0MHz  
VGS = 0V, VDS = 0V to 80V ꢀ  
Avalanche Characteristics  
Parameter  
Single Pulse Avalanche Energy‚  
Avalanche Current  
Typ.  
–––  
–––  
Max.  
51  
Units  
mJ  
EAS  
IAR  
2.7  
A
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
IS  
Continuous Source Current  
(Body Diode)  
MOSFET symbol  
2.3  
36  
––– –––  
––– –––  
showing the  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
––– ––– 1.3  
––– 45 –––  
––– 100 –––  
V
TJ = 25°C, IS = 2.7A, VGS = 0V ƒ  
ns  
TJ = 25°C, IF = 2.7A  
Qrr  
2
nC di/dt = 100A/µs ƒ  
www.irf.com  
IRF7474  
100  
10  
1
100  
10  
1
VGS  
15V  
12V  
10V  
8.0V  
7.0V  
6.5V  
6.0V  
VGS  
15V  
12V  
10V  
8.0V  
7.0V  
6.5V  
6.0V  
TOP  
TOP  
BOTTOM 5.5V  
BOTTOM 5.5V  
5.5V  
5.5V  
20µs PULSE WIDTH  
T = 25 C  
J
20µs PULSE WIDTH  
T = 175 C  
°
°
J
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
DS  
V
, Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.5  
100  
4.5A  
=
I
D
°
T = 175 C  
J
2.0  
1.5  
1.0  
0.5  
0.0  
10  
°
T = 25 C  
J
1
V
= 25V  
DS  
20µs PULSE WIDTH  
V
= 10V  
GS  
0.1  
5.0  
6.0  
7.0  
8.0 9.0  
10.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
V
, Gate-to-Source Voltage (V)  
T , Junction Temperature ( C)  
J
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRF7474  
20  
16  
12  
8
100000  
I
D
= 2.7A  
V
= 0V,  
f = 1 MHZ  
GS  
C
= C + C  
,
C
SHORTED  
V
V
V
= 80V  
= 50V  
= 20V  
iss  
gs  
gd  
ds  
DS  
DS  
DS  
C
= C  
rss  
gd  
C
= C + C  
oss  
ds gd  
10000  
Ciss  
1000  
Coss  
Crss  
100  
4
10  
1
0
0
10  
20  
30  
40  
10  
100  
Q , Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
100  
10  
1
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
°
T = 150 C  
J
10  
100µsec  
1msec  
1
°
T = 25 C  
J
Tc = 25°C  
Tj = 150°C  
Single Pulse  
10msec  
V
= 0 V  
GS  
1.4  
0.1  
0.1  
0.4  
0.6  
V
0.8  
1.0  
1.2  
1.6  
1
10  
100  
1000  
,Source-to-Drain Voltage (V)  
SD  
V
, Drain-toSource Voltage (V)  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRF7474  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
RD  
VDS  
VGS  
10V  
D.U.T.  
RG  
+VDD  
-
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
10%  
Fig 9. Maximum Drain Current Vs.  
V
GS  
Ambient Temperature  
t
t
r
t
t
f
d(on)  
d(off)  
Fig 10b. Switching Time Waveforms  
100  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
DM  
0.02  
0.01  
t
1
t
2
Notes:  
SINGLE PULSE  
(THERMAL RESPONSE)  
1. Duty factor D =  
t / t  
1 2  
2. Peak T = P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRF7474  
0.07  
0.06  
0.05  
0.04  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
V
GS  
= 10V  
I
= 2.7A  
D
6.0  
8.0  
10.0  
12.0  
14.0  
16.0  
0
20  
40  
60  
80  
100  
V
Gate -to -Source Voltage (V)  
I
, Drain Current (A)  
GS,  
D
Fig 12. On-Resistance Vs. Drain Current  
Fig 13. On-Resistance Vs. Gate Voltage  
Current Regulator  
Same Type as D.U.T.  
Q
G
50KΩ  
.3µF  
VGS  
.2µF  
12V  
Q
Q
GD  
GS  
+
120  
V
DS  
D.U.T.  
I
-
D
V
G
TOP  
1.2A  
2.2A  
BOTTOM 2.7A  
V
GS  
3mA  
Charge  
100  
80  
60  
40  
20  
0
I
I
D
G
Current Sampling Resistors  
Fig 14a&b. Basic Gate Charge Test Circuit  
and Waveform  
15 V  
V
(B R )D S S  
DRIVER  
L
t
p
V
DS  
D.U.T  
AS  
R
+
G
V
DD  
-
25  
50  
75  
100  
125  
150  
I
A
2
10V  
°
Starting T , Junction Temperature ( C)  
0.01  
t
Ω
J
p
I
A S  
Fig 15c. Maximum Avalanche Energy  
Fig 15a&b. Unclamped Inductive Test circuit  
Vs. Drain Current  
and Waveforms  
6
www.irf.com  
IRF7474  
SO-8 Package Details  
INC HES  
M ILLIM ETER S  
DIM  
D
M IN  
M AX  
.0688  
.0098  
.018  
M IN  
1.35  
0.10  
0.36  
0.19  
4.80  
3.81  
M AX  
1.75  
0.25  
0.46  
0.25  
4.98  
3.99  
5
-
7
2
B -  
A
.0532  
.0040  
.014  
A1  
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075  
.189  
.0098  
.196  
0 .25 (.01 0)  
M
A M  
-
-
.150  
.157  
e
e
.050 BASIC  
.025 BASIC  
1.27 BASIC  
K
x 4 5°  
6X  
e1  
e1  
H
K
0.635 BASIC  
θ
.2284  
.011  
0.16  
0°  
.2440  
5.80  
0.28  
0.41  
0°  
6.20  
0.48  
1.27  
8°  
A
.019  
.050  
8°  
- C  
-
0.1 0 (.0 04 )  
6
C
8 X  
L
8X  
L
A 1  
B
8 X  
θ
0.2 5 (.010 )  
M
C A S B S  
R E C O M M E N D E D F O O T P R IN T  
N O T E S :  
0.7 2 (.028  
8X  
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .  
2. C O N T R O LL IN G D IM E N S IO N : IN C H .  
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).  
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .  
6.46 ( .2 55  
)
1.78 (.0 70 )  
8X  
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S  
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).  
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O  
A
S U B S TR A TE ..  
6
1 .27  
(
.05 0  
)
3 X  
SO-8 Part Marking  
www.irf.com  
7
IRF7474  
SO-8 Tape and Reel  
TERM INAL NUM BER  
1
12.3  
11.7  
(
(
.484  
.461  
)
)
8.1 ( .318  
7.9 ( .312  
)
)
FEED DIRECTION  
N OTES :  
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .  
2. ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES).  
3. OU TL IN E CO N FO RM S TO EIA-481  
& EIA-541.  
330.00  
(12.992)  
M AX.  
14.40 ( .566  
12.40 ( .488  
)
)
NOTES  
:
1. CO NTROLLING DIM ENSION : M ILLIMETER.  
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.  
Notes:  
Repetitive rating; pulse width limited by  
„When mounted on 1 inch square copper board  
ꢀCoss eff. is a fixed capacitance that gives the same charging time  
as Coss while VDS is rising from 0 to 80% VDSS  
max. junction temperature.  
‚Starting TJ = 25°C, L = 14mH  
RG = 25Ω, IAS = 2.7A.  
†ISD ≤ 2.7A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS  
TJ ≤ 150°C  
,
ƒPulse width ≤ 400µs; duty cycle ≤ 2%.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Industrial market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 9/01  
8
www.irf.com  

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