IRF7473TRPBF-1 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRF7473TRPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总8页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7473PbF-1
HEXFET® Power MOSFET
A
VDS
100
26
V
A
1
2
3
4
8
S
S
S
G
D
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
m
Ω
7
D
61
nC
A
6
D
5
6.9
D
(@TA = 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Benefits
Multi-Vendor Compatibility
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF7473PbF-1
IRF7473TRPbF-1
IRF7473PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Max.
6.9
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
5.5
A
55
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
± 20
5.8
VGS
dv/dt
TJ
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
1
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IRF7473PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.5
22
26
mΩ VGS = 10V, ID = 4.1A
––– 5.5
V
VDS = VGS, ID = 250μA
––– ––– 1.0
––– ––– 250
––– ––– 100
––– ––– -100
V
DS = 95V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
μA
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 4.1A
ID = 4.1A
gfs
10
––– –––
61 –––
21 –––
19 –––
24 –––
20 –––
29 –––
11 –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 50V
VGS = 10V,
VDD = 50V
ID = 4.1A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 3180 –––
––– 230 –––
––– 120 –––
––– 830 –––
––– 150 –––
––– 230 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
140
Units
mJ
EAS
IAR
Avalanche Current
–––
4.1
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
55
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 55 –––
––– 140 –––
V
TJ = 25°C, IS = 4.1A, VGS = 0V
ns
TJ = 25°C, IF = 4.1A
Qrr
nC di/dt = 100A/μs
2
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June 23, 2014
IRF7473PbF-1
1000
100
10
1000
100
10
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
TOP
BOTTOM 5.5V
BOTTOM 5.5V
1
6.0V
5.5V
1
0.1
0.01
20μs PULSE WIDTH
Tj = 25°C
20μs PULSE WIDTH
°
T = 150 C
J
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
6.9A
=
I
D
100
10
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
1
°
T = 25 C
J
0.1
0.01
V
= 25V
DS
20μs PULSE WIDTH
V
=10V
GS
5
6
7
8
9
10 11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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June 23, 2014
IRF7473PbF-1
20
16
12
8
100000
10000
1000
100
I
D
=
4.1A
V
C
= 0V,
f = 1 MHZ
GS
= C + C
,
C
ds
SHORTED
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd
DS
DS
DS
C
= C
rss
gd
C
= C + C
ds gd
oss
Ciss
Coss
Crss
4
10
0
0
20
40
60
80
100
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
10
°
T = 150 C
J
100μsec
°
T = 25 C
J
1
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0 V
GS
0.1
0.1
0.0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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June 23, 2014
IRF7473PbF-1
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
2
DM
t
1
SINGLE PULSE
0.1
0.01
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
2. Peak T =P
J
t / t
1
x Z
+ T
thJA A
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRF7473PbF-1
0.028
0.026
0.024
0.022
0.035
0.030
0.025
0.020
V
= 10V
GS
I
= 6.9A
D
0
20
40
60
6.0
8.0
10.0
12.0
14.0
16.0
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3μF
VGS
.2μF
12V
Q
Q
GD
GS
+
400
V
DS
D.U.T.
I
-
D
V
G
TOP
1.8A
3.3A
BOTTOM 4.1A
V
GS
3mA
Charge
I
I
D
G
300
200
100
0
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
L
t
p
V
DS
D.U.T
AS
R
G
+
-
V
DD
25
50
75
100
125
150
I
A
20V
10V
°
Starting T , Junction Temperature ( C)
Ω
0.01
t
p
J
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7473PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOT ES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A = AS S E MB L Y S IT E CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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June 23, 2014
IRF7473PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 16mH, RG = 25Ω, IAS = 4.1A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
ꢀ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 4.1A, di/dt ≤ 210A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-S TD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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June 23, 2014
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