IRF7473 [INFINEON]
Power MOSFET(Vdss=100V, iD=6.9A); 功率MOSFET （ VDSS = 100V ，ID = 6.9A ）
| 型号： | IRF7473 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=100V, iD=6.9A) |
| 文件： | 总8页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 94037A
IRF7473
HEXFET® Power MOSFET
Applications
VDSS
100V
RDS(on) max
ID
l Telecom and Data-Com 24 and 48V
input DC-DC converters
l Motor Control
26mΩ@VGS = 10V 6.9A
l Uninterrutible Power Supply
Benefits
l Ultra Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristic
l Improved Avalanche Ruggedness and
Dynamic dv/dt
A
A
1
2
8
S
S
D
7
D
3
4
6
S
D
5
G
D
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top V iew
Typical SMPS Topologies
l Full and Half Bridge 48V input Circuit
l Forward 24V input Circuit
Absolute Maximum Ratings
Parameter
Max.
6.9
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
5.5
A
55
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Peak Diode Recovery dv/dt
Operating Junction and
5.8
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
50
Units
–––
°C/W
Notes through are on page 8
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1
4/27/01
IRF7473
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.5
22
26
mΩ VGS = 10V, ID = 4.1A
––– 5.5
V
VDS = VGS, ID = 250µA
VDS = 95V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
––– ––– 1.0
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 4.1A
ID = 4.1A
gfs
10
––– –––
61 –––
21 –––
19 –––
24 –––
20 –––
29 –––
11 –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 50V
VGS = 10V,
VDD = 50V
ID = 4.1A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 3180 –––
––– 230 –––
––– 120 –––
––– 830 –––
––– 150 –––
––– 230 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
140
Units
mJ
EAS
IAR
Avalanche Current
–––
4.1
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
55
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 55 –––
––– 140 –––
V
TJ = 25°C, IS = 4.1A, VGS = 0V
ns
TJ = 25°C, IF = 4.1A
Qrr
nC di/dt = 100A/µs
2
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IRF7473
1000
100
10
1000
100
10
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
VGS
15V
12V
TOP
TOP
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 5.5V
BOTTOM 6.0V
1
5.5V
6.0V
1
0.1
0.01
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
T = 150 C
J
°
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
6.9A
=
I
D
100
10
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
1
°
T = 25 C
J
0.1
0.01
V
= 25V
DS
20µs PULSE WIDTH
V
GS
= 10V
5
6
7
8
9
10 11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7473
20
16
12
8
100000
I
D
= 4.1A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds gd
10000
Ciss
1000
Coss
Crss
100
4
10
1
0
0
20
40
60
80
100
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
10
°
T = 150 C
J
100µsec
°
T = 25 C
J
1
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0 V
GS
0.1
0.1
0.0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7473
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7473
0.028
0.035
0.030
0.025
0.020
0.026
0.024
V
GS
= 10V
I
= 6.9A
D
0.022
0
20
40
60
6.0
8.0
10.0
12.0
14.0
16.0
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
400
V
DS
D.U.T.
I
-
D
V
G
TOP
1.8A
3.3A
BOTTOM 4.1A
V
GS
3mA
Charge
I
I
D
G
300
200
100
0
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
AS
R
G
+
-
V
DD
25
50
75
100
125
150
I
A
2
10V
°
Starting T , Junction Temperature ( C)
0.01
Ω
t
p
J
I
A S
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7473
SO-8 Package Details
INC HES
M ILLIM ETER S
DIM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075
.189
.0098
.196
0 .25 (.01 0)
M
A M
-
-
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 4 5°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C
-
0.1 0 (.0 04 )
6
C
8 X
L
8X
L
A 1
B
8 X
θ
0.2 5 (.010 )
M
C A S B S
R E C O M M E N D E D F O O T P R IN T
N O T E S :
0.7 2 (.028
8X
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
6.46 ( .2 55
)
1.78 (.0 70 )
8X
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O
A
S U B S TR A TE ..
6
1 .27
(
.05 0
)
3 X
SO-8 Part Marking
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7
IRF7473
SO-8 Tape and Reel
TERM INAL NUM BER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .
2. ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481 & EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566
12.40 ( .488
)
)
NOTES
:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board
ꢀCoss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
max. junction temperature.
Starting TJ = 25°C, L = 16mH
RG = 25Ω, IAS = 4.1A.
ISD ≤ 4.1A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/01
8
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