IRF7476PBF [INFINEON]
HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0mヘ@VGS = 4.5V , ID = 15A ); HEXFET功率MOSFET （ VDSS = 12V ， RDS （ ON）最大值= 8.0米ヘ@VGS = 4.5V ， ID = 15A ）
| 型号： | IRF7476PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0mヘ@VGS = 4.5V , ID = 15A ) |
| 文件： | 总8页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95279
IRF7476PbF
HEXFET® Power MOSFET
Applications
VDSS
12V
RDS(on) max
ID
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications.
l Power Management for Netcom,
Computing and Portable Applications.
l Lead-Free
8.0mW@VGS = 4.5V 15A
A
A
D
1
2
3
4
8
S
S
S
G
7
D
6
D
Benefits
5
D
l Ultra-Low Gate Impedance
l Very Low RDS(on)
SO-8
Top View
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
12
V
VGS
Gate-to-Source Voltage
±12
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
15
12
A
120
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
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1
04/05/06
IRF7476PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
12 ––– –––
––– 0.014 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
0.6
6.0
12
8.0
30
VGS = 4.5V, ID = 15A
VGS = 2.8V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 9.6V, VGS = 0V
mΩ
V
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 1.9
––– ––– 100
––– ––– 250
––– ––– 200
––– ––– -200
µA
Drain-to-Source Leakage Current
VDS = 9.6V, VGS = 0V, TJ = 125°C
VGS = 12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 6.0V, ID = 12A
ID = 12A
31
––– –––
26 40
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
4.6 –––
11 –––
17 –––
11 –––
29 –––
19 –––
8.3 –––
nC VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 5.0V
VDD = 6.0V
ID = 12A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2550 –––
––– 2190 –––
––– 450 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 6.0V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
160
12
Units
mJ
IAR
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
2.5
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
120
S
––– 0.87 1.2
––– 0.73 –––
V
TJ = 25°C, IS = 12A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 12A, VGS = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 55
––– 59
––– 54
––– 60
82
89
81
90
ns
TJ = 25°C, IF = 12A, VR=12V
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 12A, VR=12V
nC di/dt = 100A/µs
Qrr
2
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IRF7476PbF
1000
100
10
1000
100
10
VGS
VGS
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
BOTTOM 1.5V
1
1
1.5V
0.1
1.5V
0.1
0.01
0.01
0.001
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000.00
15A
=
I
D
100.00
10.00
1.00
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
J
V
= 10V
DS
20µs PULSE WIDTH
V
= 4.5V
GS
0.10
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.5
2.0
2.5
3.0
3.5
4.0
Tj, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7476PbF
6
5
4
3
2
1
0
100000
I
=
12A
V
= 0V,
f = 1 MHZ
D
GS
V
V
V
= 9.6V
= 6V
DS
DS
DS
C
= C + C , C SHORTED
iss
gs gd ds
C
= C
rss
gd
= 2.4V
C
= C + C
ds gd
oss
10000
1000
100
C
C
iss
oss
C
rss
0
5
10
15
20
25
30
1
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
°
T = 150
J
C
1msec
10msec
°
T = 25
C
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
10
100
VSD, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7476PbF
15
12
9
RD
VDS
VGS
D.U.T.
RG
+VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
75
100
125
150
Tc, Case Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
P
DM
0.02
0.01
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
A
J
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7476PbF
7.5
7.3
7.0
6.8
6.5
15.00
13.00
11.00
9.00
V
= 4.5V
GS
I
= 15A
D
7.00
5.00
2.0
4.0
6.0
8.0
10.0
0
20
40
60
80
100
120
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
400
V
DS
D.U.T.
-
I
V
G
D
V
GS
TOP
5.4A
9.6A
12A
3mA
Charge
BOTTOM
I
I
D
G
Current Sampling Resistors
300
200
100
0
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
25
50
75
100
125
150
20V
Ω
0.01
t
p
Starting Tj, Junction Temperature (°C)
I
AS
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7476PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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7
IRF7476PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
max. junction temperature.
Starting TJ = 25°C, L = 2.3mH
RG = 25Ω, IAS = 12A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2006
8
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