IRF7492TRPBF [INFINEON]
High frequency DC-DC converters; 高频DC- DC转换器
| 型号： | IRF7492TRPBF |
| 厂家： | 
Infineon |
| 描述： | High frequency DC-DC converters |
| 文件： | 总8页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95287A
IRF7492PbF
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
ID
Applications
l High frequency DC-DC converters
l Lead-Free
79mW@VGS = 10V 3.7A
Benefits
A
A
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
1
2
3
4
8
S
S
S
G
D
7
D
6
D
5
D
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Max.
200
Units
V
VDS
VGS
Gate-to-Source Voltage
± 20
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
3.7
3.0
A
30
PD @TA = 25°C
Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
V/ns
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
9.5
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 8
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1
02/23/07
IRF7492PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.20 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
BV(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.5
64
79
mΩ VGS = 10V, ID = 2.2A
––– –––
V
VDS = VGS, ID = 250µA
DS = 160V, VGS = 0V
––– ––– 10
––– ––– 250
––– ––– 100
––– ––– -100
V
IDSS
Drain-to-Source Leakage Current
µA
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
7.9
–––
–––
–––
–––
–––
–––
–––
––– –––
39 59
S
VDS = 50V, ID = 3.7A
ID = 2.2A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
9.2 –––
15 –––
15 –––
13 –––
27 –––
14 –––
nC VDS = 100V
VGS = 10V
VDD = 100V
ID = 2.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.5Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1820 –––
––– 190 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 780 –––
––– 89 –––
––– 150 –––
94 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
130
Units
mJ
EAS
IAR
Avalanche Current
–––
4.4
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
30
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 69 100
––– 200 310
V
TJ = 25°C, IS = 2.2A, VGS = 0V
ns
TJ = 25°C, IF = 2.2A
Qrr
nC di/dt = 100A/µs
2
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IRF7492PbF
100
10
100
10
1
VGS
15V
12V
VGS
TOP
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
BOTTOM
1
5.5V
0.1
5.5V
0.01
0.001
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
10.00
1.00
3.0
3.7A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
0.10
GS
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
Tj, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7492PbF
12
10
8
100000
V
= 0V,
f = 1 MHZ
I = 2.2A
D
GS
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C + C , C SHORTED
iss
gs gd ds
C
= C
rss
gd
C
= C + C
ds gd
oss
10000
1000
100
C
iss
6
4
C
oss
C
rss
2
10
0
1
10
100
1000
0
10
Q
20
30
40
50
V
, Drain-to-Source Voltage (V)
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
1
100µsec
1msec
°
T = 150
J
C
°
T = 25
J
C
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0 V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7492PbF
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7492PbF
500
400
300
200
100
0
100
90
80
V
= 10V
GS
70
60
50
40
I
= 3.7A
D
9
5
6
7
8
10 11 12 13 14 15
0
5
10
15
20
25
30
V
Gate -to -Source Voltage (V)
GS,
I
, Drain Current (A)
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
300
V
DS
D.U.T.
-
I
D
V
G
TOP
2.0A
3.5A
4.4A
V
GS
3mA
Charge
250
200
150
100
50
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
0
V
DD
-
25
50
75
100
125
150
I
A
20V
°
( C)
Ω
0.01
Starting Tj, Junction Temperature
t
p
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7492PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
E
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MBL Y S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7492PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board.
max. junction temperature.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = 4.4A.
as Coss while VDS is rising from 0 to 80% VDSS
.
ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2007
8
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INFINEON
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