IRF7493PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF7493PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总9页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95289
IRF7493PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
RDS(on) max
Qg (typ.)
l Lead-Free
15m @VGS=10V
80V
35nC
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
A
A
D
1
8
S
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
2
7
S
D
3
6
S
D
4
5
G
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
80
Units
VDS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
± 20
9.3
7.4
74
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TC = 25°C
D
D
@ TC = 70°C
A
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@TC = 25°C
@TC = 70°C
2.5
1.6
W
D
D
Linear Derating Factor
Operating Junction and
0.02
W/°C
°C
T
-55 to + 150
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
20
Units
Rθ
Rθ
Junction-to-Lead
Junction-to-Ambient
JC
JA
–––
50
Notes through ꢀare on page 9
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1
09/21/04
IRF7493PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
80 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
V
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
Breakdown Voltage Temp. Coefficient ––– 0.074 ––– mV/°C Reference to 25°C, ID = 1mA
Ω
m
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
11.5
–––
–––
–––
–––
–––
15
4.0
V
GS = 10V, ID = 5.6A
VDS = VGS, ID = 250µA
DS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
nA VGS = 20V
V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
µA
V
250
200
-200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Transconductance
13
–––
–––
53
S
V
DS = 15V, ID = 5.6A
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
35
ID = 5.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
5.7
12
–––
–––
–––
–––
–––
–––
VDS = 40V
VGS = 10V
VDD = 40V,
ID = 5.6A
8.3
7.5
30
td(off)
tf
Turn-Off Delay Time
Fall Time
ns RG = 6.2Ω
12
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Crss eff.
Input Capacitance
––– 1510 –––
V
GS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
320
130
–––
–––
pF
VDS = 25V
ƒ = 1.0MHz
––– 1130 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
–––
–––
210
320
–––
–––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
180
5.6
Units
mJ
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
9.3
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
74
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
37
1.3
56
78
V
T = 25°C, I = 5.6A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 5.6A, VDD = 15V
J F
Qrr
di/dt = 100A/µs
52
nC
2
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IRF7493PbF
100
10
100
10
1
VGS
15V
10V
8.0V
5.5V
5.0V
4.5V
4.0V
VGS
15V
10V
8.0V
5.5V
5.0V
4.5V
4.0V
TOP
TOP
BOTTOM 3.5V
BOTTOM 3.5V
3.5V
1
3.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
10.00
1.00
2.0
1.5
1.0
0.5
I
= 9.3A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
20µs PULSE WIDTH
0.10
3.0
4.0
5.0 6.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7493PbF
100000
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
+ C
GS
I = 5.6A
D
C
C
C
,
C
SHORTED
iss
gs
gd
ds
V
= 64V
DS
= C
rss
oss
gd
VDS= 40V
VDS= 16V
= C + C
10000
1000
100
ds
gd
Ciss
Coss
Crss
4
0
10
0
10
Q
20
30
40
50
60
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
1msec
1
T
= 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7493PbF
10
8
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
V
DS
90%
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7493PbF
0.013
0.030
0.020
0.010
0.012
V
= 10V
GS
I
= 5.6A
D
0.011
0
20
I
40
60
80
4.0
8.0
12.0
16.0
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
DS
D.U.T.
-
500
V
G
ID
V
GS
TOP
2.5A
4.5A
3mA
Charge
I
I
400
300
200
100
0
BOTTOM 5.6A
G
D
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
I
A
20V
Ω
0.01
t
p
Starting T , Junction Temperature (°C)
I
AS
J
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7493PbF
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Waveform
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7
IRF7493PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WEEK
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLYSITE CODE
LOT CODE
PART NUMBER
8
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IRF7493PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board
max. junction temperature.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 12mH
RG = 25Ω, IAS = 5.6A.
as Coss while VDS is rising from 0 to 80% VDSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
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9
相关型号：
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INFINEON
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