IRF7494 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRF7494 |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总8页 (文件大小:566K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94641
IRF7494
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
RDS(on) max
ID
44m @VGS = 10V
150V
5.2A
Benefits
A
A
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
1
2
3
4
8
S
S
D
7
D
6
S
D
5
G
D
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
150
20
Units
V
VDS
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ T = 25°C
5.2
3.7
42
D
D
A
@ T = 100°C
A
A
DM
P
@T = 25°C
A
Maximum Power Dissipation
Linear Derating Factor
3.0
W
D
0.02
3.0
-55 to + 1
150
W/°C
dv/dt
T
J
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
°C
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
–––
Max.
20
Units
°C/W
Rθ
Rθ
JL
–––
50
JA
Notes through are on page 8
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1
03/11/03
IRF7494
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
150
–––
0.15
35
–––
V
VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.5
44
4.5
VGS = 10V, ID = 3.1A
mΩ
V
VGS(th)
–––
–––
–––
–––
–––
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
1.0
µA
VDS = 120V, VGS = 0V
250
100
-100
VDS = 120V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
GS = -20V
V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 5.2A
gfs
12
–––
36
7.5
13
15
13
36
14
–––
S
Qg
–––
–––
–––
–––
–––
–––
–––
54
ID = 3.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
nC VDS = 75V
VGS = 10V
VDD = 100V
75V
ID = 3.1A
ns RG = 6.5Ω
VGS = 10V
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1750 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
220
100
870
120
170
–––
–––
–––
–––
–––
V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
370
3.1
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
–––
–––
2.7
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
42
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
55
1.3
–––
–––
V
T = 25°C, I = 3.1A, V = 0V
J S GS
SD
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 3.1A, VDD = 25V
J F
rr
di/dt = 100A/µs
Q
t
140
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF7494
100
10
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
1
4.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
100
10
1
I
= 5.2A
D
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
0.0
T
= 175°C
J
T
= 25°C
J
V
= 50V
DS
20µs PULSE WIDTH
0.1
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
4
5
6 7
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRF7494
100000
12.0
10.0
8.0
V
= 0V,
f = 1 MHZ
GS
I = 3.1A
D
C
= C + C , C SHORTED
iss
gs gd ds
V
V
V
= 120V
= 75V
= 30V
C
= C
DS
DS
DS
rss
gd
C
= C + C
ds gd
oss
10000
1000
100
C
iss
6.0
C
oss
C
4.0
rss
2.0
10
0.0
1
10
100
1000
0
5
10 15 20 25 30 35 40
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
T
= 25°C
A
Tj = 175°C
Single Pulse
V
= 0V
GS
10msec
0.10
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
, Source-to-Drain Voltage (V)
1
10
100
1000
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7494
6
5
4
3
2
1
0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
175
, Ambient Temperature (°C)
A
10%
V
GS
Fig 9. Maximum Drain Current vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
2
DM
t
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
A
J
DM
thJA
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7494
50
45
40
35
30
800
700
600
500
400
300
200
100
0
V
= 10V
GS
I
= 5.2A
D
4
6
8
10
12
14
16
18
0
5
10 15 20 25 30 35 40 45
, Drain Current (A)
V
Gate -to -Source Voltage (V)
I
GS,
D
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
G
1000
V
GS
I
D
3mA
Charge
TOP
1.3A
2.6A
I
I
D
G
800
600
400
200
0
Current Sampling Resistors
BOTTOM 3.1A
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
25
50
75
100
125
150
175
20V
Ω
0.01
t
p
I
AS
Starting T , Junction Temperature (°C)
J
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
vs. Drain Current
and Waveforms
6
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IRF7494
SO-8 Package Details
SO-8 Part Marking
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7
IRF7494
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 77mH
RG = 25Ω, IAS = 3.1A.
When mounted on 1 inch square copper
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 3.1A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
.
board, t ≤ 10 sec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/03
8
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相关型号:
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INFINEON
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