IRF7523D1TRPBF [INFINEON]
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8;
| 型号： | IRF7523D1TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 2.7A I(D), 30V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 95434
IRF7523D1PbF
FETKYä MOSFET / Schottky Diode
l Co-packaged HEXFET® Power MOSFET
and Schottky Diode
l N-Channel HEXFET
1
2
3
4
8
7
K
K
A
VDSS = 30V
RDS(on) = 0.11Ω
Schottky Vf = 0.39V
A
l Low VF Schottky Rectifier
l Generation 5 Technology
6
5
S
D
D
TM
l Micro8 Footprint
G
l Lead-Free
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
Micro8TM
ThenewMicro8TM package, withhalfthefootprintareaofthestandardSO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS@10V
2.7
2.1
A
Pulsed Drain Current
Power Dissipation
21
PD @TA = 25°C
PD @TA = 70°C
1.25
0.8
W
Linear Derating Factor
10
W/°C
V
VGS
Gate-to-Source Voltage
± 20
6.2
dv/dt
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient
100
°C/W
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
02/22/05
IRF7523D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 1.7A
VGS = 4.5V, ID = 0.85A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 0.85A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
30
—
—
1.0
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
0.090 0.130
0.140 0.190
Ω
VGS(th)
gfs
Gate Threshold Voltage
—
—
—
—
—
—
7.8
—
—
V
S
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
1.0
25
µA
nA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
-100
100
12
VGS = 20V
Qg
ID = 1.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
1.2 1.8
2.5 3.8
nC VDS = 24V
VGS = 10V (see figure 10)
4.7
10
—
—
—
—
—
—
—
VDD = 15V
ID = 1.7A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
12
RG = 6.1Ω
RD = 8.7Ω
VGS = 0V
5.3
210
80
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF VDS = 25V
ƒ = 1.0MHz (see figure 9)
Reverse Transfer Capacitance
32
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
—
—
—
—
—
—
—
—
40
48
1.25
21
A
ISM
VSD
trr
1.2
60
V
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
ns
nC
Qrr
72
di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units.
Conditions
IF(av)
Max. Average Forward Current
1.9
1.3
120
11
50% Duty Cycle. Rectangular Wave, TA = 25°C
A
Fig.14
TA = 70°C
See
ISM
Max. peak one cycle Non-repetitive
Surge current
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VFM
Max. Forward voltage drop
0.50
0.62
V
0.39
0.57
IRM
Max. Reverse Leakage current
0.06
mA
16
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
dv/dt
3600 V/ µs
2
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IRF7523D1PbF
Power Mosfet Characteristics
100
100
10
1
VGS
15V
VGS
TOP
TOP
15V
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
10
3.0V
1
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
0.1
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
TJ = 25°C
10
10
TJ = 150°C
T = 150°C
J
T = 25°C
J
1
1
VDS= 10V
20µs PULSE WIDTH
6.0A
V
GS
= 0V
A
0.1
0.1
3.0
3.5
4.0
4.5
5.0
5.5
0.4
0.8
1.2
1.6
2.0
V
, Source-to-Drain Voltage (V)
VGS , Gate-to-Source Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
ForwardVoltage
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3
IRF7523D1PbF
Power Mosfet Characteristics
2.0
I
= 1.7A
D
1.5
1.0
0.5
0.0
V
= 10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
, Junction Temperature (°C)
J
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs.Temperature
Current
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100µs
1ms
10
1
10ms
T
T
= 25°C
= 150°C
A
J
Single Pulse
0.1
A
100
1
10
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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IRF7523D1PbF
Power Mosfet Characteristics
400
300
200
100
0
20
V
C
C
C
= 0V,
f = 1MHz
I
= 1.7A
D
GS
iss
= C + C
,
C
SHORTED
gs
gd
ds
V
V
= 24V
= 15V
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
16
12
8
C
C
iss
oss
C
rss
4
0
A
A
1
10
100
0
2
4
6
8
10
12
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7523D1PbF
Schottky Diode Characteristics
10
1
TJ = 150°C
TJ = 125°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ = 25°C
160
140
120
100
80
Vr = 80% Rated
R thJA = 100°C/W
Square wave
0.1
0.0
0.2
0.4
0.6
0.8
1.0
D = 3/4
60
D = 1/2
D =1/3
D = 1/4
D = 1/5
Forward Voltage Drop - VF (V)
40
DC
20
Fig. 12 -Typical Forward Voltage Drop Characteristics
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forward Current - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. ForwardCurrent
6
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IRF7523D1PbF
Current Regulator
Same Type as D.U.T.
Q
50KΩ
G
.2µF
.3µF
12V
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 15a. Basic Gate Charge Waveform
Fig 15b. Gate Charge Test Circuit
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 16a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 16b. Switching Time Waveforms
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7
IRF7523D1PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17For N Channel HEXFETS
8
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IRF7523D1PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIMETERS
DIM
A
D
MIN
.036
MAX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
- B -
D
D
D
D
D1 D1 D2 D2
A1 .004
8
1
7
6
5
4
8
1
7
6
5
B
C
D
e
.010
.005
.116
8
1
7
2
6
3
5
4
3
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
- A -
2
3
4
2 3
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
H
L
S1 G1 S2 G2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
5.03
0.66
6°
e
θ
6X
e 1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
- C -
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B S
4.24
( .167 )
3.20
( .126 )
5.28
( .208 )
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
LOT CODE (XX)
PART NUMBER
DAT E CODE (YW) - S ee table below
Y = YEAR
W = WE E K
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
WW = (27-52) IF PRECEDED BY ALETTER
WOR K
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
WE EK
W
YEAR
Y
WEEK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
24
25
26
X
Y
Z
K
50
51
52
X
Y
Z
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9
IRF7523D1PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/05
10
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相关型号：
IRF7530TR
Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
INFINEON
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