IRF7524D1GPBF [INFINEON]
FETKY MOSFET & Schottky Diode; FETKY MOSFET和肖特基二极管
| 型号： | IRF7524D1GPBF |
| 厂家： | 
Infineon |
| 描述： | FETKY MOSFET & Schottky Diode |
| 文件： | 总8页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96176
IRF7524D1GPbF
TM
FETKY MOSFET & Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l P-Channel HEXFET
1
2
3
4
8
K
K
A
VDSS = -20V
RDS(on) = 0.27Ω
Schottky Vf = 0.39V
7
A
l Low VF Schottky Rectifier
l Generation 5 Technology
6
5
S
D
D
TM
l Micro8 Footprint
G
l Lead-Free
l Halogen-Free
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
Micro8TM
ThenewMicro8TM package, withhalfthefootprintareaofthestandardSO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
-1.7
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-1.4
-14
A
PD @TA = 25°C
PD @TA = 70°C
1.25
W
Power Dissipation
0.8
Linear Derating Factor
10
mW/°C
V
VGS
Gate-to-Source Voltage
± 12
dv/dt
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-5.0
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient
100
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
09/16/08
IRF7524D1GPbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250µA
VGS = -4.5V, ID = -1.2A
VGS = -2.7V, ID = -0.60A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.60A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
-20 ––– –––
––– 0.17 0.27
––– 0.28 0.40
-0.70 ––– –––
1.3 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 5.4 8.2
––– 0.96 1.4
––– 2.4 3.6
––– 9.1 –––
––– 35 –––
––– 38 –––
––– 43 –––
––– 240 –––
––– 130 –––
––– 64 –––
V
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
ID = -1.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -16V
VGS = -4.5V, See Fig. 6
VDD = -10V
ID = -1.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 8.3Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF VDS = -15V
ƒ = 1.0MHz, See Fig. 5
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current(Body Diode) ––– ––– -1.25
A
ISM
VSD
trr
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
––– ––– -9.6
––– ––– -1.2
V
TJ = 25°C, IS = -1.2A, VGS = 0V
TJ = 25°C, IF = -1.2A
Reverse Recovery Time (Body Diode) ––– 52
78
95
ns
Qrr
Reverse Recovery Charge
––– 63
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
IF(av)
Max. Average Forward Current
1.9
50% Duty Cycle. Rectangular Wave, TA = 25°C
A
1.4
Fig.14
TA = 70°C
See
ISM
Max. peak one cycle Non-repetitive
Surge current
120
5µs sine or 3µs Rect. pulse
Following any rated
11
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Forward voltage drop
Max. Units
0.50
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VFM
0.62
V
0.39
0.57
IRM
Max. Reverse Leakage current
0.02
VR = 20V
TJ = 25°C
mA
8
TJ = 125°C
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
dv/dt
3600 V/ µs
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7524D1GPbF
Power Mosfet Characteristics
10
10
VGS
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
BOTTOM -1.50V
1
1
-1.50V
0.1
0.01
0.1
-1.50V
20µs PULSE WIDTH
J
20µs PULSE WIDTH
T = 150 C
J
°
T = 25 C
°
0.01
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
I
= -1.2A
D
TJ = 25°C
TJ = 150°C
1
0.1
VDS = -10V
20µs PULSE WIDTH
V
= -4.5V
GS
0.01
A
5.0A
-60 -40 -20
0
20 40 60 80 100 120 140 160
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T , Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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IRF7524D1GPbF
Power Mosfet Characteristics
500
10
V
C
C
C
= 0V,
f = 1MHz
I
V
= -1.2A
= -16V
GS
iss
rss
oss
D
DS
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
= C + C
ds
gd
400
300
200
100
0
8
6
4
2
0
C
C
iss
oss
C
rss
A
A
1
10
100
0
2
4
6
8
10
-V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
1
100µs
T = 25°C
J
1ms
0.1
10ms
T
= 25°C
= 150°C
A
T
J
V
GS
= 0V
Single Pulse
A
0.01
0.1
A
0.4
0.6
0.8
1.0
1.2
1
10
100
-V , Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF7524D1GPbF
Power Mosfet Characteristics
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1.0
0.8
0.6
0.4
0.2
0.0
0.300
0.250
ID = -1.7A
VGS = -2.5V
0.200
VGS = -5.0V
0.150
0.100
0.0
0.5
1.0
1.5
2.0
2
3
4
5
6
7
8
-I , Drain Current (A)
-V
GS
, Gate-to-Source Voltage (V)
D
Fig 10. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
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IRF7524D1GPbF
Schottky Diode Characteristics
10
1
TJ = 150°C
TJ = 125°C
TJ = 25°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
160
140
120
100
80
Vr = 20V
R thJA = 100°C/W
Square wave
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
60
40
0.1
DC
20
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V (V)
F
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forward Current - I F(AV) (A)
Fig. 12 -Typical Forward Voltage Drop
Characteristics
Fig.14 - Maximum Allowable Ambient
Temp. Vs. ForwardCurrent
6
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IRF7524D1GPbF
Micro8 Package Outline Dimensions are shown in milimeters (inches)
Micro8 Part Marking
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRF7524D1GPbF
Micro8TM Tape & Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2008
8
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相关型号：
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Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
INFINEON
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