IRF7606 [INFINEON]
Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm); 功率MOSFET （ VDSS = -30V ， RDS（ON） = 0.09ohm ）
| 型号： | IRF7606 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm) |
| 文件： | 总8页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1264C
IRF7606
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
A
1
2
8
S
S
D
D
VDSS = -30V
7
6
5
3
4
S
D
D
G
R
DS(on) = 0.09Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
MICRO8
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-3.6
-2.9
A
-19
PD @TA = 25°C
Power Dissipation
1.8
W
mW/°C
V
Linear Derating Factor
14
VGS
Gate-to-Source Voltage
± 20
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-5.0
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
70
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
IRF7606
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.024 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.09
––– ––– 0.15
-1.0 ––– –––
2.3 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -10V, ID = -2.4A
VGS = -4.5V, ID = -1.2A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -1.2A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 20
––– 2.1 3.1
––– 7.6 11
30
ID = -2.4A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
pF
VDS = -24V
VGS = -10V, See Fig. 6 and 9
VDD = -15V
––– 13 –––
––– 20 –––
––– 43 –––
––– 39 –––
––– 520 –––
––– 300 –––
––– 140 –––
ID = -2.4A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 6.2Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
–––
–––
––– -1.8
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-19
–––
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
V
TJ = 25°C, IS = -2.4A, VGS = 0V
TJ = 25°C, IF = -2.4A
––– 43
––– 50
64
76
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
ISD ≤ -2.4A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7606
1 0 0
1 0
1
1 0 0
1 0
1
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
TOP
TOP
BOTT OM - 3.0V
BOTT OM - 3.0V
-3.0V
20µs P ULSE WIDTH
20µs P ULSE WIDTH
= 25°C
T
J
= 150°C
-3.0V
T
J
A
A
0. 1
1
1 0
0. 1
1
1 0
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1 0 0
1 0
1
2. 0
I
= -2.7A
D
1. 5
1. 0
0. 5
0. 0
T
= 25°C
J
T
= 15 0°C
J
V
= -1 0V
DS
20µs P ULS E W IDTH
V
= -10V
GS
A
A
3.0
3.5
4.0
4.5
5.0
5.5
6.0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
TJ , Junction Temperature (°C)
-VG S , Ga te-to-So urce Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRF7606
1000
20
16
12
8
V
C
C
= 0V ,
f = 1MH z
I
= -2.7A
GS
iss
D
= C
= C
= C
+ C
+ C
,
C
ds
SHORTED
gs
g d
ds
g d
rss
oss
V
V
= -24V
= -15V
DS
DS
C
gd
800
C
is s
600
400
200
C
o s s
C
rs s
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
1
0
A
A
10
100
0
5
10
15
20
25
30
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1 0 0
1 0
1
100
10
1
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
T
= 150°C
J
1 00µs
T
= 25°C
J
1m s
T
T
= 25°C
= 150°C
A
J
V
= 0V
S ingle Pulse
10 ms
G S
0. 1
A
A
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
1. 6
1
10
100
-V
, Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRF7606
RD
VDS
Q
G
VGS
-10V
D.U.T.
RG
Q
Q
-
+
GS
GD
VDD
V
-10V
G
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
t
t
r
t
t
f
d(on)
d(off)
V
50KΩ
GS
.2µF
12V
10%
.3µF
-
V
+
DS
D.U.T.
V
GS
90%
-3mA
V
DS
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7606
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 12. For P-Channel HEXFETS
IRF7606
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
LE A D A S S IG N M E N T S
IN C H E S
M IL L IM E T E R S
D IM
D
M IN
M A X
M IN
M A X
3
-
B
-
D
D
7
D
6
D
5
D 1 D 1 D 2 D 2
A
.0 3 6
.0 0 4
.0 1 0
.0 0 5
.1 1 6
.0 4 4
.0 0 8
.0 1 4
.0 0 7
.1 2 0
0 . 9 1
0 . 1 0
0 . 2 5
0 .1 3
2 .9 5
1 .1 1
0 .2 0
0 .3 6
0 .1 8
3 .0 5
A 1
B
8
1
8
1
7
6
5
4
8
1
7
6
5
4
3
C
S IN G L E
D U A L
H
E
A
D
0 .2 5 (.0 1 0 )
M
A
M
-
-
2
3
4
2
3
e
.0 2 5 6 B A S IC
.0 1 2 8 B A S IC
0 . 6 5 B A S IC
0 . 3 3 B A S IC
2
3
e 1
E
S
S
S
G
S 1 G 1 S 2 G 2
.1 1 6
.1 8 8
.0 1 6
0 °
.1 2 0
.1 9 8
.0 2 6
6 °
2 .9 5
4 .7 8
0 . 4 1
0 °
3 . 0 5
H
5 . 03
0. 6 6
6 °
L
e
θ
6 X
e
1
1
R E C O M M E N D E D F O O T P R IN T
θ
1 .0 4
.0 4 1
8X
A
0 . 3 8
8 X
(
)
(
.0 1 5 )
-
C -
0 .1 0 (.0 0 4 )
A
C
L
B
8 X
0 .0 8 (.0 0 3 )
8 X
8 X
M
C
A
S
B
S
3 . 2 0
. 1 2 6
4 .2 4
.1 6 7
5 . 2 8
. 2 08
(
)
(
(
)
)
N OT ES :
1
2
3
D IM EN SION IN G A ND T OLE RA N C IN G P ER AN SI Y14 .5M -1982.
C O N TR OLL IN G D IM EN SION : INC H .
0. 6 5
.0 2 5 6 )
6 X
(
D IM EN SION S DO N OT IN C LU D E M OLD F LAS H .
Part Marking Information
Micro8
A
D ATE C OD E (YW W )
E XAM PLE : THIS IS AN IRF7501
Y = LAS T D IGIT O F YEA R
W W = W E EK
451
7501
PA RT N UM B ER
TO P
IRF7606
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M BE R
1
12 .3
11 .7
(
(
.48 4
.46 1
)
)
8 .1
7 .9
(
(
.31 8
.31 2
)
)
F E E D D IR EC T IO N
N OTES:
1 . OU TLIN E CON FORM S TO EIA-4 81 & EIA-54 1.
2 . C ONTRO LLING DIM ENSION : M IL LIM ETER .
330 .00
(1 2.9 92)
M A X .
14.4 0
12.4 0
(
(
.56 6
.48 8
)
)
N O T E S
1. C O N T R O LL IN G D IM E N S IO N
2. O U T LIN E C O N F O R M S T O EIA -48 1
:
:
M IL LIM E T E R .
E IA-5 41.
&
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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