IRF7603TRPBF [INFINEON]
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| 型号： | IRF7603TRPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 |
| 文件： | 总8页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1262D
IRF7603
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
A
A
D
1
2
8
7
S
S
S
VDSS = 30V
D
3
4
6
5
D
G
D
RDS(on) = 0.035Ω
Top V iew
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
5.6
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
4.5
A
30
PD @TA = 25°C
Power Dissipation
1.8
W
mW/°C
V
Linear Derating Factor
14
VGS
Gate-to-Source Voltage
± 20
5.0
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
-55 to + 150
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
70
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
IRF7603
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.035
––– ––– 0.060
1.0 ––– –––
4.3 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 10V, ID = 3.7A
VGS = 4.5V, ID = 1.9A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 1.9A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 18
27
ID = 3.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.4 3.6
––– 5.6 8.4
––– 5.7 –––
––– 28 –––
––– 18 –––
––– 12 –––
––– 520 –––
––– 200 –––
––– 80 –––
nC
ns
pF
VDS = 24V
VGS = 10V, See Fig. 6 and 9
VDD = 15V
ID = 3.7A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 4.0Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– 1.8
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 30
S
p-n junction diode.
TJ = 25°C, IS = 3.7A, VGS = 0V
TJ = 25°C, IF = 3.7A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.2
––– 53 80
––– 87 130
V
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ 3.7A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7603
1 0 0
1 0
1
1 0 0
1 0
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
BOTT OM 3.0V
3.0V
3.0V
20µs P ULSE WIDTH
20µs P ULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
0. 1
0. 1
0. 1
1
1 0
0. 1
1
1 0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1 0 0
1 0
1
2. 0
1. 5
1. 0
0. 5
0. 0
I
= 3.7A
D
T
= 25°C
J
T
= 150°C
J
V
= 10V
D S
20µs PU LSE W ID TH
V
= 10V
GS
0. 1
A
5. 5A
3. 0
3. 5
4. 0
4. 5
5. 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
TJ , Junction Temperature (°C)
VG S , Ga te-to-So urce Voltage (V )
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRF7603
2 0
1 6
1 2
8
1 0 0 0
I
= 3.7A
D
V
C
C
= 0V ,
f = 1MH z
GS
iss
= C
+ C
+ C
,
C
ds
SHORTED
V
V
= 24V
= 15V
gs
g d
DS
DS
= C
= C
rss
oss
g d
ds
C
gd
8 0 0
C
C
iss
6 0 0
4 0 0
2 0 0
0
o ss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
0
4
8
1 2
1 6
2 0
2 4
2 8
1
1 0
1 0 0
Q G , Total Gate Charge (nC)
VD S , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0
1 0 0
1 0
1
OPERATION IN THIS AREA LIMITE D
BY R
DS(on)
1 0
100µs
1m s
T
= 150°C
J
T
= 25°C
J
1
10 m s
T
T
= 25°C
= 150°C
A
J
V
= 0V
G S
S ingle Pulse
0. 1
A
0.1
A
0. 4
0. 8
1. 2
1. 6
2. 0
2. 4
0.1
1
1 0
1 0 0
VSD , Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRF7603
RD
Q
Q
VDS
G
10V
VGS
Q
D.U.T.
GS
GD
RG
+ VDD
-
V
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
3mA
t
t
r
t
t
f
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
1
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7603
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 12. For N-Channel HEXFETS
IRF7603
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
L E A D A S S IG N M E N T S
IN C H E S
M IL LIM E T E R S
D IM
D
M IN
M A X
.0 4 4
.0 0 8
.0 1 4
.0 0 7
.1 2 0
M IN
0 .9 1
0 .1 0
0 .2 5
0 .1 3
2 .9 5
M A X
1 . 11
0 . 20
0 . 36
0 .1 8
3 .0 5
3
-
B
-
6
3
D
8
D
7
D
6
D
5
D 1 D 1 D 2 D 2
A
. 0 36
. 0 04
. 0 10
.0 0 5
.1 1 6
A 1
B
8
1
7
6
5
4
8
1
7
2
5
4
3
C
D
e
S IN G L E
D U A L
H
E
A
-
-
0 .2 5 (.0 1 0 )
M
A
M
2
3
1
2
3
4
. 0 25 6 B A S IC
. 0 12 8 B A S IC
0 .6 5 B A S IC
0 .3 3 B A S IC
e 1
E
S 1 G 1 S 2 G 2
S
S
S
G
. 1 16
.1 8 8
. 0 16
0 °
.1 2 0
.1 9 8
.0 2 6
6 °
2. 9 5
4 .7 8
0 .4 1
0°
3 .0 5
H
L
5. 03
0 .6 6
6°
e
θ
6 X
e
1
1
R E C O M M E N D E D F O O T P R IN T
θ
1 . 04
(
8 X
0 .3 8
8 X
A
.0 4 1
)
(
.0 1 5 )
-
C
B
-
0 . 10 (. 00 4 )
A
C
L
8X
0. 08 (. 00 3 )
8 X
8X
M
C
A
S
B
S
4. 2 4
.1 6 7
3 .2 0
.1 2 6
5 .2 8
.2 08
(
)
(
)
(
)
N OT ES:
1
2
3
D IM E N SIO NIN G A ND TO LER AN C IN G P ER AN SI Y14.5M -1982.
C ON T RO LLIN G D IM EN SION : IN C H.
0 . 65
.0 2 56 )
6 X
(
D IM E N SIO NS DO NO T IN CL UD E M O LD F LAS H.
Part Marking Information
Micro8
A
D A TE C O D E (Y W W )
Y = LA S T D IG IT O F YE A R
= W E E K
E X AM P L E : TH IS IS A N IR F 7501
W
W
451
7501
P A R T N U M B E R
TO P
IRF7603
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R
1
12 .3
11 .7
(
(
.4 8 4
.4 6 1
)
)
8. 1
7. 9
(
(
. 31 8
. 31 2
)
)
F E E D D IR EC T IO N
N O TES:
1 . O U TL IN E CO N FOR M S TO EIA-48 1 & EIA -5 4 1.
2 . C O N TRO L LIN G D IM ENSION : M IL LIM ETER .
3 3 0. 00
(1 2 .9 92 )
M A X .
1 4 .4 0
1 2 .4 0
(
(
. 56 6
. 48 8
)
)
N O T E S
1. C O N T R O LL IN G D IM E N S IO N
2. O U T LIN E C O N F O R M S T O E IA -48 1
:
:
M ILL IM E T ER .
E IA -54 1 .
&
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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