IRF7604 [INFINEON]
Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm); 功率MOSFET （ VDSS = -20V ， RDS（ON） = 0.09ohm ）
| 型号： | IRF7604 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm) |
| 文件： | 总8页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1263E
IRF7604
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
A
D
1
2
3
4
8
7
S
S
VDSS = -20V
D
6
5
S
D
G
D
RDS(on) = 0.09Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
M icro8
Absolute Maximum Ratings
Parameter
Max.
-3.6
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-2.9
A
-19
PD @TA = 25°C
Power Dissipation
1.8
W
mW/°C
V
Linear Derating Factor
14
VGS
Gate-to-Source Voltage
± 12
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-5.0
V/ns
°C
-55 to + 150
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
70
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
12/9/97
IRF7604
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.022 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.090
––– ––– 0.13
-0.70 ––– –––
2.6 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -2.4A
VGS = -2.7V, ID = -1.2A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -1.2A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 13
20
ID = -2.4A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 2.6 3.9
––– 5.6 9.0
––– 17 –––
––– 53 –––
––– 31 –––
––– 38 –––
––– 590 –––
––– 330 –––
––– 170 –––
nC
ns
pF
VDS = -16V
VGS = -4.5V, See Fig. 6 and 9
VDD = -10V
RiseTime
ID = -2.4A
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.0Ω
RD = 4.0Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = -15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IS
––– ––– -1.8
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– -19
p-n junction diode.
TJ = 25°C, IS = -2.4A, VGS = 0V
TJ = 25°C, IF = -2.4A
di/dt = 100A/µs
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
––– 41
––– 38
62
57
ns
nC
Qrr
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ -2.4A, di/dt ≤ -96A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7604
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
TOP
TOP
10
10
BOTTOM - 1.5V
BOTTOM - 1.5V
1
1
-1.5V
0.1
0.1
0.01
-1.5V
20µs PULSE W IDTH
= 25°C
20µs PULSE W IDTH
= 150°C
T
T
J
J
A
0.01
A
0.1
1
10
0.1
1
10
-V
D S
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
I
= -2.4A
D
10
1.5
1.0
0.5
0.0
TJ = 150°C
1
TJ = 25°C
0.1
0.01
VDS = -10V
20µs PULSE W ID TH
V
= -4.5V
GS
A
4.5A
1.5
2.5
3.5
-60 -40 -20
0
20
40
60
80
100 120 140 160
T
J
, Junction Tem perature (°C)
-VG S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7604
10
8
1200
I
V
= -2.4A
D
DS
V
C
C
= 0V,
f = 1M Hz
GS
iss
= C
+ C
+ C
,
C
SHORTED
= -16V
gs
gd
ds
= C
= C
rss
oss
gd
ds
1000
C
gd
C
C
iss
800
600
400
200
0
6
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
1
10
100
0
4
8
12
16
20
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
D S
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIM ITED
BY R
DS(on)
100µs
1m s
10
T
= 150°C
J
T
= 25°C
J
10m s
1
T
T
= 25°C
= 150°C
A
J
Single Pulse
V
= 0V
G S
A
0.1
0.1
A
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRF7604
VDS
Q
G
VGS
-4.5 V
D.U.T.
Q
Q
GD
GS
RG
-
+
VDD
V
G
V
-4.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
t
t
r
t
t
f
50KΩ
d(on)
d(off)
.2µF
V
GS
12V
.3µF
10%
-
V
+
DS
D.U.T.
V
GS
90%
-3mA
V
DS
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7604
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 12. For P-Channel HEXFETS
IRF7604
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIG NM ENTS
INCHES
M ILLIM ETERS
DIM
D
MIN
.036
.004
.010
.005
.116
M AX
.044
.008
.014
.007
.120
M IN
0.91
0.10
0.25
0.13
2.95
M AX
1.11
0.20
0.36
0.18
3.05
3
- B -
D
D
7
D
6
D
5
D1 D1 D2 D2
A
A1
B
8
1
8
1
7
6
5
4
8
1
7
2
6
3
5
4
3
C
D
e
SING LE
DU AL
H
E
0.25 (.010)
M
A
M
- A -
2
3
4
2
3
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
S1 G 1 S2 G 2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
H
L
5.03
0.66
6°
e
6X
θ
e 1
REC OM M ENDED FOO TPRIN T
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
- C -
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B
S
4.24
( .167 )
3.20
( .126 )
5.28
( .208 )
N O TE S :
1
2
3
D IM E N S IO N IN G A N D TO LE R A N C IN G P E R A N S I Y 14.5M -1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
0.65
( .0256 )
6X
D IM E N S IO N S D O N O T IN C LU D E M O LD F LA S H .
Part Marking Information
Micro8
A
DATE CO DE (YW W )
EXAM PLE : THIS IS AN IRF7501
Y = LAST DIGIT O F YEAR
W W = W EEK
451
7501
PART NUMBER
TO P
IRF7604
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
TERM INAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTIO N
N OTES:
1. OU TLIN E C ON FOR M S TO EIA-481 & EIA-541.
2. C ON TRO LLIN G DIM EN SION : M ILLIM ETER.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CONTRO LLING DIMENSION : MILLIMETER.
2. OUTLINE CONFO RM S TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/97
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