IRF7607 [INFINEON]
Power MOSFET(Vdss=20V, Rds(on)=0.030ohm); 功率MOSFET （ VDSS = 20V ， RDS（ON） = 0.030ohm ）
| 型号： | IRF7607 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=20V, Rds(on)=0.030ohm) |
| 文件： | 总8页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93845
PROVISIONAL
IRF7607
HEXFET® Power MOSFET
●
●
●
●
●
●
Trench Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
A
A
1
2
8
S
S
D
VDSS = 20V
7
D
3
4
6
S
D
5
G
D
RDS(on) = 0.030Ω
Top View
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
withanextremelyefficientandreliabledeviceforuseinawide
varietyofapplications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applicationswhereprintedcircuitboardspaceisatapremium.
Thelowprofile(<1.1mm)oftheMicro8willallowittofiteasily
intoextremelythinapplicationenvironmentssuchasportable
electronicsandPCMCIAcards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
20
6.5
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
5.2
A
50
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.8
W
Power Dissipation
1.2
Linear Derating Factor
0.014
± 12
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
70
Units
°C/W
RθJA
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1
1/19/00
IRF7607
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030
––– ––– 0.045
0.60 ––– 1.0
13 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 4.5V, ID = 6.5A
VGS = 2.5V, ID = 5.2A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 6.5A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 15
22
ID = 6.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.2 3.3
––– 3.5 5.3
––– 8.5 –––
––– 11 –––
––– 36 –––
––– 16 –––
––– 1310 –––
––– 150 –––
––– 36 –––
nC VDS = 10V
VGS = 5.0V
VDD = 10V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 10Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
–––
–––
1.8
50
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
––– 19
––– 13
29
20
ns
TJ = 25°C, IF = 1.7A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. (See fig. 11)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7607
PROVISIONAL
100
10
1
100
10
1
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
BOTTOM1.50V
1.50V
1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
5.3A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
V
= 15V
20µs PULSE WIDTH
DS
V
= 4.5V
GS
1
1.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.0
2.5
3.0 3.5
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7607
PROVISIONAL
2000
10
8
6.5A
V
GS
= 0V,
f = 1MHz
C SHORTED
ds
I
D
=
C
= C + C
iss
gs
gd
gd ,
V
= 10V
DS
C
= C
rss
C
= C + C
1600
1200
800
400
0
oss
ds
gd
C
iss
6
4
2
C
C
oss
rss
0
0
4
8
12
16
20
24
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
1ms
°
T = 25 C
J
10ms
°
= 25 C
T
A
°
T
= 150 C
J
Single Pulse
V
= 0 V
GS
1
0.1
0.1
0.4
1
10
100
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7607
PROVISIONAL
0.20
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.10
0.00
Id = 250µA
-0.10
-0.20
-0.30
-0.40
-50
-25
0
25
50
75
100 125 150
25
50
T
75
100
125
°
150
, Case Temperature ( C)
T
, Temperature ( °C )
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Typical Vgs(th) Variance Vs.
Case Temperature
Juction Temperature
100
D = 0.50
0.20
0.10
0.05
10
P
DM
0.02
0.01
1
t
1
t
2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7607
PROVISIONAL
0.040
0.035
0.030
0.025
0.020
0.10
0.08
0.06
0.04
0.02
VGS= 2.5V
Id = 5.3A
VGS = 4.5V
30 40
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
10
I
20
V
Gate -to -Source Voltage ( V )
- Drain Current (A )
GS,
D,
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
6
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IRF7607
PROVISIONAL
Micro8 Package Outline
Dimensions are shown in millimeters (inches)
LE A D A S S IG N M E N TS
IN C H E S
M IL LIM E T E R S
D IM
D
M IN
.0 36
.0 04
.0 10
.0 05
.1 16
M A X
.044
.008
.014
.007
.120
M IN
0 .91
0 .10
0 .25
0.13
2.95
M A X
1.11
0.20
0.36
0.18
3.05
3
-
B
-
D
D
7
D
6
D
5
D 1 D 1 D 2 D 2
A
A 1
B
8
1
7
6
5
4
8
1
8
1
7
6
5
4
3
C
D
e
S IN G L E
D U A L
H
E
0.25 (.0 10)
M
A
M
- A
-
2
3
2
3
4
.025 6 B A SIC
.012 8 B A SIC
0 .65 B A S IC
0 .33 B A S IC
2
3
e1
E
S 1 G 1 S 2 G 2
S
S
S
G
.1 16
.1 88
.016
0 °
.120
.198
.0 26
6 °
2.95
4.78
0.41
0°
3.05
H
L
5 .03
0.6 6
6°
e
6X
θ
e
1
1
R E C O M M E N D E D F O O T P R IN T
θ
1.04
0.3 8
8 X
A
( .0 41
8X
)
(
.015 )
-
C -
0.10 (.00 4)
A
C
L
B
8X
0.08 (.0 03)
8X
8X
M
C
A
S
B
S
4.24
.167
3.20
( .1 26
5.28
)
( .2 08
(
)
)
N OTE S:
1
2
3
DIM EN SION ING AND TOLERA NCING P ER AN SI Y 14.5M -1982.
CON TRO LLING DIMEN SIO N : IN CH.
0.65
.02 56 )
6X
(
DIM EN SION S DO NOT IN CLUD E M OLD FLAS H.
Micro8 Part Marking Information
A
DATE C O DE (YW W )
EXAM PLE : THIS IS AN IRF7501
Y = LAST D IGIT O F YEAR
W W = W EEK
451
7501
PAR T N UM BER
TOP
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7
IRF7607
PROVISIONAL
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
T E R M IN AL N U M B E R
1
12.3
11.7
(
(
.48 4
.46 1
)
)
8.1
7.9
(
(
.31 8
.31 2
)
)
F E ED D IR E C T IO N
N OTES:
1. OU TLINE CONFOR M S TO EIA-481 & EIA-541.
2. CO NTRO LLING DIM EN SIO N : M ILLIM ETER.
330.00
(12 .9 92)
M A X .
14.4 0
12.4 0
(
(
.566
.488
)
)
N O T E S
1. C O N T R O LLIN G D IM E N S IO N
2. O U TL IN E C O N F O R M S T O E IA -481
:
:
M IL LIM E T ER .
E IA -54 1.
&
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
1/2000
8
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