IRF7606PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7606PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总7页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95245
IRF7606PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
A
D
1
2
3
4
8
S
S
VDSS = -30V
7
D
6
S
G
D
5
D
RDS(on) = 0.09Ω
l Lead-Free
Description
Top View
Fifth GenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
boardspaceisatapremium. Thelowprofile(<1.1mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-Source Voltage
-30
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-3.6
-2.9
A
-29
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1.8
W
W
1.1
14
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
VGSM
dv/dt
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
30
-5.0
V
V/ns
°C
TJ , TSTG
-55 to + 150
240 (1.6mm from case)
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
70
Units
°C/W
RθJA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
1
5/13/04
IRF7606PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.075 0.09
0.130 0.15
-1.0 ––– –––
2.3 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = - 10V, ID = -2.4A
VGS = -4.5V, ID = -1.2A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -1.2A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 20
––– 2.1 3.1
––– 7.6 11
30
ID = -2.4A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -24V
VGS = -10V, See Fig. 9
––– 13 –––
––– 20 –––
––– 43 –––
––– 39 –––
––– 520 –––
––– 300 –––
––– 140 –––
VDD = -10V
ID = -2.4A
RG = 6.0Ω
RD = 4.0Ω
VGS = 0V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF VDS = -25V
ƒ = 1.0MHz, See Fig. 8
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
-1.8
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-29
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -2.4A, VGS = 0V
TJ = 25°C, IF = -2.4A
––– 43
––– 50
64
76
ns
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 10 )
Surface mounted on FR-4 board, t ≤
10sec.
ISD ≤ -2.4A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
2
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IRF7606PbF
100
10
1
100
10
1
VGS
- 15V
- 10V
VGS
- 15V
- 10V
TOP
TOP
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
-3.0V
20µs PULSE WIDTH
T = 150°C
20µs PULSE WIDTH
= 25°C
-3.0V
T
J
J
A
A
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
100
10
1
TJ = 25°C
T = 150°C
J
T = 150°C
J
T = 25°C
J
VDS = -10V
20µs PULSE WIDTH
V
GS
= 0V
A
0.1
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-V , Source-to-Drain Voltage (V)
-VGS , Gate-to-Source Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
ForwardVoltage
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3
IRF7606PbF
2.0
I
= -2.7A
D
1.5
1.0
0.5
0.0
V
= -10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
, Junction Temperature (°C)
J
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs.Temperature
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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IRF7606PbF
20
16
12
8
1000
800
600
400
200
0
V
C
C
C
= 0V,
f = 1MHz
I
= -2.7A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
V
= -24V
= -15V
DS
= C + C
ds
gd
V
DS
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
1
10
100
0
5
10
15
20
25
30
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 9. Typical Gate Charge Vs.
Fig 8. Typical Capacitance Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7606PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIMETERS
DIM
A
D
MIN
.036
MAX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
- B -
D
D
7
D
6
D
5
D1 D1 D2 D2
A1 .004
8
1
8
1
7
6
5
4
B
C
D
e
.010
.005
.116
8
1
7
2
6
3
5
4
3
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
- A -
2
3
4
2 3
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
H
L
S
S
S
G
S1 G1 S2 G2
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
5.03
0.66
6°
e
θ
6X
e 1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
A
0.38
8X
( .015 )
- C -
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B S
3.20
( .126 )
4.24
( .167 )
5.28
( .208 )
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
LOT CODE (XX)
PART NUMBER
DAT E CODE (YW) - S ee table below
Y = YEAR
W = WEEK
P = DE S IGNAT E S L E AD - F RE E
PRODUCT (OPTIONAL)
WW = (27-52) IF PRECEDED BY A LETTER
WOR K
WW= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
WE EK
W
YEAR
Y
WEEK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
24
25
26
X
Y
Z
K
50
51
52
X
Y
Z
6
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IRF7606PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
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7
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