IRF7807D2PBF [INFINEON]
FETKY⑩ MOSFET / SCHOTTKY DIODE; FETKY ™ MOSFET /肖特基二极管
| 型号： | IRF7807D2PBF |
| 厂家： | 
Infineon |
| 描述： | FETKY⑩ MOSFET / SCHOTTKY DIODE |
| 文件： | 总8页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 95436A
IRF7807D2PbF
FETKY MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• Lead-Free
1
2
3
4
8
7
A/S
A/S
K/D
K/D
6
5
A/S
G
K/D
K/D
SO-8
Top View
Description
The FETKY™ family of Co-Pack HEXFET® MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of
portable electronics applications.
Device Features (Max Values)
IRF7807D2
VDS
30V
RDS(on)
Qg
25mΩ
14nC
QSW
Qoss
5.2nC
21.6nC
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Max.
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
30
±12
V
VGS
25°C
70°C
ID
8.3
6.6
A
IDM
PD
66
25°C
70°C
25°C
70°C
2.5
W
A
1.6
Schottky and Body Diode
IF (AV)
TJ,TSTG
3.7
Average ForwardCurrent
2.3
Junction & Storage Temperature Range
–55 to 150
°C
Thermal Resistance
Parameter
Max.
Units
Maximum Junction-to-Ambient
RθJA
50
°C/W
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1
10/7/04
IRF7807D2PbF
Electrical Characteristics
Parameter
Min
Typ
Max Units
Conditions
Drain-to-Source
Breakdown Voltage*
V(BR)DSS
RDS(on)
30
V
VGS = 0V, ID = 250µA
Static Drain-Source
on Resistance*
17
25
mΩ
VGS = 4.5V, ID = 7A
Gate Threshold Voltage* VGS(th)
1.0
V
VDS = VGS,ID = 250µA
Drain-Source Leakage
Current*
IDSS
90
7.2
µA
mA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V,
Tj = 125°C
Gate-Source Leakage
Current*
IGSS
+/- 100 nA
VGS = +/-12V
Total Gate Charge
Synch FET*
Total Gate Charge
Control FET*
Qgsync
Qgcont
Qgs1
10.5
12
14
17
VDS<100mV,
VGS = 5V, ID = 7A
VDS= 16V,
VGS = 5V, ID = 7A
VDS = 16V, ID = 7A
Pre-Vth
2.1
Gate-Source Charge
Post-Vth
Qgs2
0.76
nC
Gate-Source Charge
Gate to Drain Charge
Switch Charge*
(Qgs2 + Qgd)
Qgd
QSW
2.9
3.66
5.2
Output Charge*
Gate Resistance
Qoss
Rg
17.6
1.2
21.6
VDS = 16V, VGS = 0
Ω
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Min
Typ
Max
0.54
0.43
Units
V
Conditions
T = 25°C, Is = 3A, VGS =0V
T = 125°C, Is = 3A, VGS =0V
VSD
trr
j
j
Reverse Recovery Time
36
41
ns T = 25°C, Is = 7.0A, VDS = 16V
j
Reverse Recovery Charge
Forward Turn-On Time
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
50% Duty Cycle, Rectangular
Devices are 100% tested to these parameters.
2
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IRF7807D2PbF
100
10
1
100
10
1
VGS
4.5V
3.5V
3.0V
VGS
4.5V
3.5V
3.0V
TOP
TOP
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
380µs PULSE WIDTH
Tj = 25°C
380µs PULSE WIDTH
Tj = 150°C
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
60
50
40
30
20
10
0
70
VGS
VGS
4.5V
3.5V
3.0V
2.5V
2.0V
TOP
4.5V
3.5V
3.0V
2.5V
2.0V
TOP
60
50
40
30
20
10
0
BOTTOM 0.0V
BOTTOM 0.0V
O.OV
0.0 V
380µS PULSE WIDTH
Tj = 150°C
380µs PULSE WIDTH
Tj = 25°C
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
V
, Source-to-Drain Voltage (V)
SD
V
, Source-to-Drain Voltage (V)
SD
Fig 4. Typical Reverse Output Characteristics
Fig 3. Typical Reverse Output Characteristics
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3
IRF7807D2PbF
6
4
2
0
2000
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I = 7.0A
D
C
= C + C
iss
gs
gd ,
V
= 16V
C
= C
rss
gd
DS
C
= C + C
gd
1600
1200
800
400
0
oss
ds
C
iss
C
oss
C
rss
1
10
100
0
4
8
12
V
, Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G,
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
2.0
I
= 7.0A
D
V
= 4.5V
GS
T = 25°C
J
1.5
1.0
0.5
T = 150°C
J
V
= 10V
DS
380µs PULSE WIDTH
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
2.5
3.0
3.5
T , Junction Temperature (°C )
J
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance
Fig 8. Typical Transfer Characteristics
Vs. Temperature
4
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IRF7807D2PbF
0.024
0.022
0.020
0.018
0.016
0.05
0.04
0.03
0.02
0.01
VGS = 4.5V
VGS = 10V
I
= 7.0A
D
0
20
40
60
80
2.0
4.0
6.0
8.0
10.0
I
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 10. On-Resistance Vs. Drain Current
Fig 9. On-Resistance Vs. Gate Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
P
2
DM
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
A
J
DM
thJA
0.1
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET)
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5
IRF7807D2PbF
Mosfet, Body Diode & Schottky Diode Characteristics
100
10
1
100
10
Tj = 150°C
125°C
100°C
1
Tj = 125°C
Tj = 25°C
75°C
50°C
0.1
0.01
0.001
25°C
0
5
10
15
20
25
30
Reverse Voltage - V (V)
R
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse Voltage
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage Drop - V
( V )
SD
Fig. 12 - Typical Forward Voltage Drop
Characteristics
6
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IRF7807D2PbF
SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRI NT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIME NS IONS ARE S HOWN IN MIL L IME T E RS [INCHE S ].
4. OU T L INE CONF OR MS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: THIS IS AN IRF7807D1 (FETKY)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
WW = WE E K
A = AS S E MB L Y S I T E CODE
XXXX
807D1
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
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7
IRF7807D2PbF
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
8
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