IRF7807D2TRPBF [INFINEON]
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8;
| 型号： | IRF7807D2TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93762
IRF7807D2
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters up to 5A Output
• Low Conduction Losses
• Low Switching Losses
1
2
3
4
8
7
K/D
K/D
A/S
A/S
6
5
A/S
G
K/D
K/D
• Low Vf Schottky Rectifier
SO-8
Top View
Description
The FETKY™ family of Co-Pack HEXFET MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of
portable electronics applications.
Device Features (Max Values)
IRF7807D2
VDS
30V
RDS(on)
Qg
25mΩ
14nC
QSW
Qoss
5.2nC
21.6nC
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics.The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Max.
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
30
±12
V
VGS
25°C
70°C
ID
8.3
6.6
A
IDM
PD
66
25°C
70°C
25°C
70°C
2.5
W
A
1.6
Schottky and Body Diode
IF (AV)
TJ,TSTG
3.7
Average ForwardCurrent
2.3
Junction & Storage Temperature Range
–55 to 150
°C
Thermal Resistance
Parameter
Max.
Units
Maximum Junction-to-Ambient
RθJA
50
°C/W
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IRF7807D2
Electrical Characteristics
Parameter
Min
Typ
Max Units
Conditions
Drain-to-Source
V(BR)DSS
30
V
VGS = 0V, ID = 250µA
Breakdown Voltage*
Static Drain-Source
on Resistance*
RDS(on)
17
25
mΩ
VGS = 4.5V, ID = 7A
Gate Threshold Voltage* VGS(th)
1.0
V
VDS = VGS,ID = 250µA
Drain-Source Leakage
Current*
IDSS
90
7.2
µA
mA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V,
Tj = 125°C
Gate-Source Leakage
Current*
IGSS
+/- 100 nA
VGS = +/-12V
Total Gate Charge
Synch FET*
Total Gate Charge
Control FET*
Pre-Vth
Gate-Source Charge
Post-Vth
Qgsync
Qgcont
Qgs1
Qgs2
10.5
12
14
17
VDS<100mV,
VGS = 5V, ID = 7A
VDS= 16V,
VGS = 5V, ID = 7A
VDS = 16V, ID = 7A
2.1
0.76
nC
Gate-Source Charge
Gate to Drain Charge
Switch Charge*
(Qgs2 + Qgd)
Qgd
QSW
2.9
3.66
5.2
Output Charge*
Gate Resistance
Qoss
Rg
17.6
1.2
21.6
VDS = 16V, VGS = 0
Ω
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Min
Typ
Max
0.54
0.43
Units
V
Conditions
Tj = 25°C, Is = 3A, VGS =0V
Tj = 125°C, Is = 3A, VGS =0V
VSD
trr
Reverse Recovery Time
36
41
ns T = 25°C, Is = 7.0A, VDS = 16V
j
Reverse Recovery Charge
Forward Turn-On Time
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
50% Duty Cycle, Rectangular
Devices are 100% tested to these parameters.
2
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IRF7807D2
100
10
1
100
10
1
VGS
4.5V
3.5V
3.0V
VGS
4.5V
3.5V
3.0V
TOP
TOP
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
380µs PULSE WIDTH
Tj = 25°C
380µs PULSE WIDTH
Tj = 150°C
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
70
VGS
4.5V
3.5V
3.0V
2.5V
2.0V
VGS
TOP
TOP
4.5V
3.5V
3.0V
2.5V
2.0V
60
50
40
30
20
10
0
60
50
40
30
20
10
0
BOTTOM 0.0V
BOTTOM 0.0V
O.OV
0.0 V
380µS PULSE WIDTH
Tj = 150°C
380µs PULSE WIDTH
Tj = 25°C
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
V
, Source-to-Drain Voltage (V)
SD
V
, Source-to-Drain Voltage (V)
SD
Fig 4. Typical Reverse Output Characteristics
Fig 3. Typical Reverse Output Characteristics
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3
IRF7807D2
2000
6
4
2
0
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I
= 7.0A
C
= C + C
D
iss
gs
gd ,
C
= C
V
= 16V
rss
gd
DS
C
= C + C
gd
1600
1200
800
400
0
oss
ds
C
iss
C
oss
C
rss
1
10
100
0
4
8
12
V
, Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G,
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
2.0
1.5
1.0
0.5
100
I
= 7.0A
D
V
= 4.5V
GS
T = 25°C
J
T = 150°C
J
V
= 10V
DS
380µs PULSE WIDTH
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
2.5
3.0
3.5
T , Junction Temperature (°C )
J
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance
Fig 8. Typical Transfer Characteristics
Vs. Temperature
4
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IRF7807D2
0.024
0.022
0.020
0.018
0.016
0.05
0.04
0.03
0.02
0.01
VGS = 4.5V
VGS = 10V
I
= 7.0A
D
0
20
I
40
60
80
2.0
4.0
6.0
8.0
10.0
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 10. On-Resistance Vs. Drain Current
Fig 9. On-Resistance Vs. Gate Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
P
0.01
DM
SINGLE PULSE
(THERMAL RESPONSE)
1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
A
J
DM
thJA
0.1
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET)
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5
IRF7807D2
Mosfet, Body Diode & Schottky Diode Characteristics
100
10
1
100
10
Tj = 150°C
125°C
100°C
75°C
1
Tj = 125°C
Tj = 25°C
0.1
50°C
25°C
0.01
0.001
0
5
10
15
20
25
30
Reverse Voltage - V (V)
R
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse Voltage
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage Drop - V
( V )
SD
Fig. 12 - Typical Forward Voltage Drop
Characteristics
6
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IRF7807D2
SO-8 Package Details
Part Marking
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7
IRF7807D2
Tape and Reel
TER M INAL NU M BER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IREC TIO N
N OTES:
1. C ON TRO LLIN G DIM EN SION : M ILLIM ETER.
2. ALL DIM ENSION S ARE SHO W N IN M ILLIM ETER S(INC HES).
3. OU TLIN E C ON FOR M S TO EIA-481 & EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTRO LLING D IM EN SIO N : M ILLIM ETER .
2. O U TLINE C O N FO RM S TO EIA-481 & EIA-541.
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Data and specifications subject to change without notice.
11/99
8
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