IRF7842 [INFINEON]
Power MOSFET(Vdss = 40 V); 功率MOSFET （ VDSS = 40 V ）
| 型号： | IRF7842 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss = 40 V) |
| 文件： | 总9页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95864
IRF7842
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Secondary Synchronous Rectification
for Isolated DC-DC Converters
l Synchronous Fet for Non-Isolated
DC-DC Converters
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
VDSS
40V
RDS(on) max
Qg (typ.)
33nC
5.0m:@VGS = 10V
A
A
D
1
8
S
2
7
S
D
3
6
S
D
4
5
G
D
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
40
Units
V
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
V
± 20
18
GS
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
14
A
140
2.5
1.6
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
W
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
W/°C
°C
T
-55 to + 150
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
–––
50
Notes through ꢀ are on page 9
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1
4/26/04
IRF7842
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
V
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
1.35
4.0
4.7
–––
5.0
5.9
V
V
V
GS = 10V, ID = 17A
GS = 4.5V, ID = 14A
DS = VGS, ID = 250µA
mΩ
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
2.25
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– - 5.6 ––– mV/°C
–––
–––
–––
–––
81
–––
–––
–––
1.0
150
100
µA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
V
GS = 20V
GS = -20V
––– -100
gfs
–––
33
–––
50
VDS = 20V, ID = 14A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
9.6
2.8
10
–––
–––
–––
–––
–––
–––
TBD
–––
–––
–––
–––
VDS = 20V
nC VGS = 4.5V
ID = 14A
Gate Charge Overdrive
10.6
12.8
18
Switch Charge (Qgs2 + Qgd)
Output Charge
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
1.3
14
Ω
td(on)
tr
td(off)
tf
V
DD = 20V, VGS = 4.5V
12
ID = 14A
Turn-Off Delay Time
Fall Time
21
ns Clamped Inductive Load
5.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 4500 –––
V
V
GS = 0V
–––
–––
680
310
–––
–––
pF
DS = 20V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
Units
mJ
EAS
IAR
50
14
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
3.1
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
140
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
99
1.0
150
17
V
T = 25°C, I = 14A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 14A, VDD = 20V
J F
Qrr
di/dt = 100A/µs
11
nC
2
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IRF7842
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
2.5V
1
2.5V
≤
≤
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
2.0
1.5
1.0
0.5
I
= 18A
D
V
= 10V
GS
100.0
10.0
1.0
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7842
100000
V
12
10
8
= 0V,
= C
f = 1 MHZ
GS
iss
I = 14A
D
C
C
C
+ C , C
SHORTED
V
= 30V
gs
gd
ds
DS
VDS= 20V
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
Ciss
6
4
Coss
Crss
2
0
100
1
0
20
40
60
80
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.0
10.0
1.0
T
= 150°C
J
1msec
T
= 25°C
J
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7842
2.4
2.0
1.6
1.2
0.8
0.4
18
16
14
12
10
8
I
= 250µA
D
6
4
2
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
J
, Junction Temperature (°C)
J
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
0.20
10
1
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
0.1
Ri (°C/W) τi (sec)
τ
JτJ
τ
τ
Cτ
10.48
26.83
12.69
0.138167
1.8582
44.8
τ
1τ1
τ
2 τ2
3τ3
0.01
0.001
0.0001
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7842
200
160
120
80
16
12
8
I
I
= 18A
D
D
TOP
6.7A
7.5A
14A
BOTTOM
T
= 125°C
= 25°C
J
4
T
40
J
0
0
2.0
4.0
6.0
8.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
15V
LD
VDS
DRIVER
+
L
V
DS
+
-
VDD
D.U.T
AS
R
G
V
DD
-
D.U.T
I
A
V
GS
VGS
0.01Ω
t
p
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 13a. Unclamped Inductive Test Circuit
Fig 14a. Switching Time Test Circuit
VDS
V
(BR)DSS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 14b. Switching Time Waveforms
Fig 13b. Unclamped Inductive Waveforms
6
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IRF7842
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Current Regulator
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Waveform
Fig 16. Gate Charge Test Circuit
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7
IRF7842
SO-8 Package Details
INCHES
MIN MAX
.0532 .0688
MILLIME T ERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
4
6
H
E
0.25 [.010]
A
.1497 .1574
.050 BASIC
e
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A S UB S T R AT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A = AS S E MB L Y S IT E CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
8
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IRF7842
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.5mH
RG = 25Ω, IAS = 14A.
When mounted on 1 inch square copper board
Rθ is measured at TJ approximately 90°C
ꢀ
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.4/04
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9
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