IRF7910TRPBF-1 [INFINEON]
Small Signal Field-Effect Transistor;
| 型号： | IRF7910TRPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor 晶体管 |
| 文件： | 总8页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7910PbF-1
HEXFET® Power MOSFET
VDS
12
15
17
10
V
1
2
3
4
8
S1
G1
D1
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
m
Ω
7
D1
nC
A
6
S2
D2
5
G2
D2
(@TA = 25°C)
SO-8
Top View
Applications
l High Frequency 3.3V and 5V input Point of-Load Synchronous Buck Converters for Netcom and
Computing Applications
l Power Management for Netcom, Computing and Portable Applications
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF7910PbF-1
IRF7910TRPbF-1
IRF7910PbF-1
SO-8
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
12
Units
V
VGS
Gate-to-Source Voltage
± 12
10
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
7.9
79
A
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.0
1.3
16
W
W
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
Max.
42
62.5
Units
RθJL
Junction-to-Drain Lead
°C/W
RθJA
Junction-to-Ambient
Notes through are on page 8
1
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November 22, 2013
IRF7910PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
12 ––– ––– VGS = 0V, ID = 250μA
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA
––– 11.5 15
VGS = 4.5V, ID = 8.0A
VGS = 2.8V, ID = 5.0A
VDS = VGS, ID = 250μA
VDS = 9.6V, VGS = 0V
VDS = 9.6V, VGS = 0V, TJ = 125°C
VGS = 12V
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
–––
0.6
20
50
VGS(th)
IDSS
Gate Threshold Voltage
––– 2.0
V
––– ––– 100
––– ––– 250
––– ––– 200
––– ––– -200
Drain-to-Source Leakage Current
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 6.0V, ID = 8.0A
ID = 8.0A
18
––– –––
17 26
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
4.4 –––
5.2 –––
16 –––
9.4 –––
22 –––
16 –––
6.3 –––
nC VDS = 6.0V
VGS = 4.5V
VGS = 0V, VDS = 10V
VDD = 6.0V
ID = 8.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1730 –––
––– 1340 –––
––– 330 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 6.0V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
100
Units
mJ
IAR
Avalanche Current
–––
8.0
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
Continuous Source Current
(Body Diode)
1.8
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
79
––– 0.85 1.3
––– 0.70 –––
V
TJ = 25°C, IS = 8.0A, VGS = 0V
TJ = 125°C, IS = 8.0A, VGS = 0V
TJ = 25°C, IF = 8.0A, VR =12V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 50
––– 60
––– 51
––– 60
75
90
77
90
ns
Qrr
trr
nC di/dt = 100A/μs
ns TJ = 125°C, IF = 8.0A, VR =12V
nC di/dt = 100A/μs
Qrr
2
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November 22, 2013
IRF7910PbF-1
1000
100
10
1000
100
10
VGS
VGS
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
BOTTOM 1.5V
1
1.5V
1.5V
1
0.1
0.01
20μs PULSE WIDTH
Tj = 150°C
20μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
10A
=
I
D
1.5
1.0
0.5
0.0
T
= 150°C
J
10
T
= 25°C
J
V
= 10V
DS
20μs PULSE WIDTH
V
= 4.5V
GS
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
4.0
V
, Gate-to-Source Voltage (V)
TJ, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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November 22, 2013
IRF7910PbF-1
10000
1000
100
12
10
8
V
= 0V,
f = 1 MHZ
GS
I
= 8.0A
D
C
= C + C , C SHORTED
V
V
= 9.6V
= 6.0V
iss
gs gd ds
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
6
4
Crss
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
G
20
30
40
1
10
100
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100μsec
T
= 25°C
J
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0V
GS
1
0.1
0
1
10
100
0.0
0.5
1.0
1.5
2.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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November 22, 2013
IRF7910PbF-1
10.0
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
TC, Case Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
0.02
0.01
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
10
J
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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November 22, 2013
IRF7910PbF-1
0.0145
0.0140
0.0135
0.0130
0.0125
0.0120
0.020
0.018
0.015
0.013
0.010
I
= 8.0A
V
= 4.5V
D
GS
2.5
3.5
4.5
5.5
0
20
40
60
80
100
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3μF
VGS
.2μF
12V
Q
Q
GD
GS
+
250
V
DS
D.U.T.
-
I
V
D
G
TOP
3.6A
V
GS
6.4A
8.0A
3mA
Charge
200
150
100
50
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
0
V
DD
-
25
50
75
100
125
150
I
A
20V
°
( C)
Ω
0.01
Starting T , Junction Temperature
t
p
J
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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November 22, 2013
IRF7910PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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November 22, 2013
IRF7910PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 3.2mH, RG = 25Ω, IAS = 8.0A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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November 22, 2013
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