IRF9333PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF9333PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97523
IRF9333PbF
HEXFET® Power MOSFET
VDS
-30
V
RDS(on) max
(@VGS = -10V)
19.4
m
RDS(on) max
(@VGS = -4.5V)
32.5
14
m
Qg (typical)
nC
A
SO-8
ID
-9.2
(@TA = 25°C)
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Resulting Benefits
Industry-Standard SO8 Package
Multi-Vendor Compatibility
Environmentally Friendlier
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number
Package Type
Standard Pack
Note
Form
Tube/Bulk
Quantity
95
IRF9333PbF
IRF9333TRPbF
SO8
SO8
Tape and Reel
4000
Absolute Maximum Ratings
Max.
-30
Parameter
Units
VDS
Drain-to-Source Voltage
V
± 20
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
V
GS
-9.2
I
I
I
@ TA = 25°C
D
D
-7.3
A
@ TA = 70°C
-75
DM
2.5
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
D
D
W
W/°C
°C
1.6
Power Dissipation
0.02
Linear Derating Factor
-55 to + 150
Operating Junction and
T
T
J
Storage Temperature Range
STG
Notes through are on page 2
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1
6/21/10
IRF9333PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-30 ––– –––
––– 0.019 ––– V/°C
BVDSS
ΔΒ
V
Δ
VDSS/ TJ
Breakdown Voltage Temp. Coefficient
V
V
GS = -10V, ID = -9.2A
GS = -4.5V, ID = -7.5A
RDS(on)
–––
–––
-1.3
–––
–––
–––
–––
–––
13
15.6 19.4
25.6 32.5
Static Drain-to-Source On-Resistance
Ω
m
VGS(th)
Gate Threshold Voltage
-1.8
-5.7
–––
-2.4
V
VDS = VGS, ID = -25μA
Δ
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
V
V
DS = -24V, VGS = 0V
IDSS
-1.0
μA
DS = -24V, VGS = 0V, TJ = 125°C
––– -150
––– -100
VGS = -20V
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
–––
–––
14
100
–––
–––
38
V
V
DS = -10V, ID = -7.5A
gfs
Qg
S
DS = -15V, VGS = -4.5V, ID = - 7.5A
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
VGS = -10V
DS = -15V
Qg
Total Gate Charge
25
V
Qgs
Qgd
RG
td(on)
tr
nC
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
3.5
6.4
15
–––
–––
–––
–––
–––
–––
–––
ID = -7.5A
Ω
VDD = -15V, VGS = -4.5V
ID = -1.0A
Turn-On Delay Time
Rise Time
16
44
ns
Ω
td(off)
tf
RG = 6.8
See Figs. 20a &20b
GS = 0V
Turn-Off Delay Time
Fall Time
55
49
V
Ciss
Coss
Crss
Input Capacitance
––– 1110 –––
VDS = -25V
ƒ = 1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
–––
–––
230
160
–––
–––
Avalanche Characteristics
Typ.
–––
–––
Max.
Parameter
Units
mJ
EAS
IAR
100
-7.5
Single Pulse Avalanche Energy
Avalanche Current
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
D
S
–––
–––
-2.5
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
-75
VSD
T = 25°C, I = -2.5A, V = 0V
Diode Forward Voltage
-1.2
V
J
S
GS
trr
T = 25°C, I = -2.5A, VDD = -24V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
24
15
36
23
ns
J
F
Qrr
di/dt = 100A/μs
nC
Thermal Resistance
Typ.
–––
–––
Max.
20
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Units
RθJL
RθJA
°C/W
50
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 3.5mH, RG = 25Ω, IAS = -7.5A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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IRF9333PbF
100
10
100
10
1
VGS
-10V
VGS
-10V
TOP
TOP
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
BOTTOM
BOTTOM
1
-2.5V
-2.5V
0.1
0.01
60μs PULSE WIDTH
60μs PULSE WIDTH
Tj = 150°C
≤
≤
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.6
1.4
1.2
1.0
0.8
0.6
I
= -9.2A
D
V
= -10V
GS
10
T
= 150°C
J
1
0.1
T
= 25°C
J
V
= -15V
DS
≤ 60μs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80 100120 140 160
-V , Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
14
V
C
= 0V,
f = 1 MHZ
GS
I = -7.5A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= -24V
= -15V
= -6.0V
12
10
8
C
= C
DS
DS
DS
rss
gd
C
= C + C
oss
ds
gd
C
C
iss
6
oss
rss
4
C
2
0
0
8
16
24
32
1
10
100
Q
Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF9333PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
T
= 150°C
J
DS
10
1
1msec
10msec
T
= 25°C
J
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
1.0
GS
DC
0.1
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.1
0.1
1
10
100
-V , Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.5
10
8
6
4
2
0
2.0
1.5
1.0
I
= -25μA
D
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Ambient Temperature (°C)
J
A
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Ambient Temperature
100
D = 0.50
0.20
10
1
0.10
0.05
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF9333PbF
60
50
40
30
20
10
80
70
60
50
40
30
20
10
I
= -9.4A
D
V
= -4.5V
GS
T = 125°C
J
V
= -10V
GS
T = 25°C
J
2
4
6
8
10 12 14 16 18 20
0
10
20
30
40
50
60
70
-I , Drain Current (A)
-V
Gate -to -Source Voltage (V)
D
GS,
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
420
1000
I
D
-2.1A
-3.0A
360
300
240
180
120
60
TOP
800
600
400
200
0
BOTTOM -7.5A
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
25
50
75
100
125
150
Time (sec)
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16. Typical Power vs. Time
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T *
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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5
IRF9333PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
-VGS
DRIVER
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
VDD
+
-VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
6
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IRF9333PbF
SO-8PackageOutline(Mosfet&Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF9333PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification Information†
Consumer ††
Qualification level
(per JEDEC JESD47F††† guidelines)
MSL1
(per JEDEC J-STD-020D†††
Moisture Sensitivity Level
RoHS Compliant
SO-8
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.6/2010
8
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