IRFB38N20D [INFINEON]
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A); 功率MOSFET （ VDSS = 200V ， RDS（ON）最大值= 0.054ohm ，ID = 44A ）
| 型号： | IRFB38N20D |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) |
| 文件： | 总11页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94358
IRFB38N20D
IRFS38N20D
SMPS MOSFET
IRFSL38N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
ID
44A
0.054Ω
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D2Pak
TO-262
TO-220AB
IRFB38N20D
IRFS38N20D
IRFSL38N20D
Absolute Maximum Ratings
Parameter
Max.
44
Units
A
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
32
180
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
W
Power Dissipation
320
Linear Derating Factor
2.1
W/°C
V
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
9.5
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
RθJA
0.47
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
Junction-to-Ambient
–––
40
Notes through are on page 11
www.irf.com
1
12/12/01
IRFB/IRFS/IRFSL38N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.22 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.054
3.0 ––– 5.0
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
VGS = 10V, ID = 26A
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
17
––– –––
S
VDS = 50V, ID = 26A
ID = 26A
Qg
–––
–––
–––
–––
–––
–––
–––
76 110
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
22
34
34
51
nC VDS = 160V
VGS = 10V,
VDD = 100V
16 –––
95 –––
29 –––
47 –––
ID = 26A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 2900 –––
––– 450 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
73 –––
pF
ƒ = 1.0MHz
––– 3550 –––
––– 180 –––
––– 380 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ꢀ
Coss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
460
26
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
32
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
44
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
180
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 160 240
––– 1.3 2.0
V
TJ = 25°C, IS = 26A, VGS = 0V
TJ = 25°C, IF = 26A
nS
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFB/IRFS/IRFSL38N20D
100
VGS
1000
100
10
VGS
15V
12V
TOP
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
10V
8.0V
7.0V
6.0V
5.5V
10
5.0V
BOTTOM 5.0V
BOTTOM 5.0V
1
1
5.0V
300µs PULSE WIDTH
300µs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
1000.00
44A
=
I
D
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
= 25°C
J
100.00
10.00
1.00
T
= 175°C
J
V
= 15V
DS
300µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
5.0
7.0
9.0
11.0
13.0
15.0
°
T , Junction Temperature
(
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFB/IRFS/IRFSL38N20D
12
10
7
100000
D
I
= 26A
V
= 0V,
f = 1 MHZ
GS
V
V
V
=
=
=
160V
100V
40V
DS
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
5
Coss
Crss
2
10
0
0
16
Q
32
48
64
80
1
10
100
1000
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000.00
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.10
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
100
1000
V
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFB/IRFS/IRFSL38N20D
RD
50
40
30
20
10
0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
C)
175
°
(
T
, Case Temperature
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
SINGLE PULSE
0.02
0.01
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFB/IRFS/IRFSL38N20D
900
720
540
360
180
0
1 5V
I
D
TOP
11A
19A
26A
DRIVER
L
BOTTOM
V
G
DS
D.U.T
AS
R
+
-
V
D D
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting Tj, Junction Temperature
(
C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
10 V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRFB/IRFS/IRFSL38N20D
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
IRFB/IRFS/IRFSL38N20D
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415 )
3.78 (.149)
-
B
-
10.29 (.405 )
2.87 (.1 13)
2.62 (.1 03)
4 .69 (.18 5)
4 .20 (.16 5)
3.54 (.139)
1.3 2 (.05 2)
1.2 2 (.04 8)
-
A
-
6.4 7 (.2 55)
6.1 0 (.2 40)
4
15 .24 (.60 0)
14 .84 (.58 4)
1.15 (.04 5)
M IN
LE A D A S S IG N M E N TS
1 - G A T E
1
2
3
2 - D R A IN
3 - S O U R C E
4 - D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30)
4.06 (.160)
3.55 (.140)
0.93 (.0 37)
0.69 (.0 27)
0.55 (.02 2)
0.46 (.01 8)
3X
3 X
1 .40 (.05 5)
3 X
1 .15 (.04 5)
0.3 6 (.014 )
M
B
A
M
2.9 2 (.115 )
2.6 4 (.104 )
2 .54 (.10 0)
2X
N O TE S :
1
2
D IME N S IO N IN G
&
TO LE R A N C IN G P E R A N S I Y 14 .5 M , 1 982.
3
4
O U TL IN E C O N F O R MS TO JE D E C O U T LIN E T O -2 20A B .
C O N TR O LLIN G D IM E N S IO N : IN C H
H E A T S IN K
&
LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WE E K 19
ASSEMBLY
LOT CODE
LINE C
8
www.irf.com
IRFB/IRFS/IRFSL38N20D
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
RECTIFIER
LOGO
F530S
DATE CODE
YEAR 0 = 2000
WE E K 02
ASSEMBLY
LOT CODE
LINE L
www.irf.com
9
IRFB/IRFS/IRFSL38N20D
TO-262 Package Outline
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLYLINE "C"
DATE CODE
YEAR 7 = 1997
WE E K 19
ASSEMBLY
LOT CODE
LINE C
10
www.irf.com
IRFB/IRFS/IRFSL38N20D
D2Pak Tape & Reel Information
TR R
1 .60 (.0 63)
1 .50 (.0 59)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEE D D IREC TIO N
TR L
11.60 (.457)
11.40 (.449)
1 .85 (.0 73)
1 .65 (.0 65)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED D IRE CTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
M IN.
30.40 (1.197)
M AX.
NO TES
1. CO MFORM S TO EIA-418.
2. CO NTROLLING DIM ENSIO N: M ILLIM ETER.
3. DIMENSION MEASURED
:
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
O UTER EDGE.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 1.3mH
RG = 25Ω, IAS = 26A.
ISD ≤ 26A, di/dt ≤ 390A/µs, VDD ≤ V(BR)DSS
as Coss while VDS is rising from 0 to 80% VDSS
.
This is only applied to TO-220AB package.
,
TJ ≤ 175°C.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRFB38N20D),
& Industrial (IRFS/SL38N20D) market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/01
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11
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INFINEON
IRFB4110
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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