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IRFHM831PBF [INFINEON]

Control MOSFET for Buck Converters; 控制MOSFET的降压转换器
IRFHM831PBF
型号： IRFHM831PBF
厂家： Infineon    Infineon
描述：

Control MOSFET for Buck Converters
控制MOSFET的降压转换器

转换器
文件： 总8页 (文件大小：262K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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PD -97539A  
IRFHM831PbF  
HEXFET® Power MOSFET  
VDS  
30  
V
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
RDS(on) max  
(@VGS = 10V)  
7.8  
m
Qg (typical)  
RG (typical)  
7.3  
0.5  
nC  
ID  
PQFN 3.3mm x 3.3mm  
40  
A
(@Tc(Bottom) = 25°C)  
Applications  
• Control MOSFET for Buck Converters  
Features and Benefits  
Features  
Benefits  
Low Charge (typical 7.3nC)  
Low Thermal Resistance to PCB (<4.7°C/W)  
100% Rg tested  
Lower Switching Losses  
Enable Better Thermal Dissipation  
Increased Reliability  
Low Profile (<1.0mm)  
results in Increased Power Density  
Industry-Standard Pinout  
⇒
Multi-Vendor Compatibility  
Easier Manufacturing  
Compatible with Existing Surface Mount Techniques  
Environmentally Friendlier  
Increased Reliability  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Industrial Qualification  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tape and Reel  
Tape and Reel  
Quantity  
4000  
IRFHM831TRPBF  
IRFHM831TR2PBF  
PQFN 3.3mm x 3.3mm  
PQFN 3.3mm x 3.3mm  
400  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Max.  
30  
Units  
VDS  
V
VGS  
±20  
14  
ID @ TA = 25°C  
ID @ TA = 70°C  
ID @ TC(Bottom) = 25°C  
ID @ TC(Bottom) = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
11  
40  
A
28  
96  
2.5  
27  
Power Dissipation  
PD @TA = 25°C  
PD @ TC(Bottom) = 25°C  
W
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
TJ  
TSTG  
Storage Temperature Range  
Notes  through † are on page 8  
www.irf.com  
1
9/8/10  
IRFHM831PbF  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
30 ––– –––  
––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA  
Conditions  
VGS = 0V, ID = 250μA  
BVDSS  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
V
V
/ T  
J
ΔΒ DSS Δ  
RDS(on)  
–––  
6.6  
7.8  
VGS = 10V, ID = 12A  
GS = 4.5V, ID = 12A  
mΩ  
––– 10.7 12.6  
V
VGS(th)  
Gate Threshold Voltage  
1.35  
–––  
–––  
–––  
–––  
–––  
82  
1.8  
-6.8  
–––  
–––  
–––  
2.35  
V
VDS = VGS, ID = 25μA  
V
Δ
Gate Threshold Voltage Coefficient  
Drain-to-Source Leakage Current  
––– mV/°C  
GS(th)  
IDSS  
1.0  
μA  
VDS = 24V, VGS = 0V  
150  
V
V
V
DS = 24V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Forward Transconductance  
Total Gate Charge  
100  
nA  
GS = 20V  
––– -100  
GS = -20V  
gfs  
Qg  
Qg  
–––  
16  
–––  
–––  
11  
S
VDS = 15V, ID = 12A  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
nC VGS = 10V, VDS = 15V, ID = 12A  
Total Gate Charge  
7.3  
1.7  
0.9  
2.5  
2.2  
3.4  
5.1  
0.5  
6.9  
12  
Qgs1  
Pre-Vth Gate-to-Source Charge  
Post-Vth Gate-to-Source Charge  
Gate-to-Drain Charge  
Gate Charge Overdrive  
Switch Charge (Qgs2 + Qgd)  
Output Charge  
–––  
–––  
–––  
–––  
–––  
–––  
VDS = 15V  
Qgs2  
Qgd  
VGS = 4.5V  
nC  
ID = 12A  
Qgodr  
See Fig.17 & 18  
Qsw  
Qoss  
RG  
nC  
VDS = 16V, VGS = 0V  
Gate Resistance  
Ω
–––  
–––  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
VDD = 15V, VGS = 4.5V  
ID = 12A  
Rise Time  
–––  
–––  
–––  
ns  
Turn-Off Delay Time  
6.2  
4.7  
RG=1.8Ω  
See Fig.15  
VGS = 0V  
Fall Time  
Ciss  
Coss  
Crss  
Input Capacitance  
––– 1050 –––  
pF  
Output Capacitance  
–––  
–––  
190  
80  
–––  
–––  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz  
Avalanche Characteristics  
Parameter  
Single Pulse Avalanche Energy  
Typ.  
–––  
–––  
Max.  
50  
Units  
mJ  
EAS  
IAR  
Avalanche Current  
12  
A
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
IS  
D
S
Continuous Source Current  
MOSFET symbol  
–––  
––– 40  
(Body Diode)  
Pulsed Source Current  
showing the  
integral reverse  
A
G
ISM  
–––  
–––  
96  
(Body Diode)  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
–––  
–––  
–––  
–––  
15  
1.0  
22  
24  
V
TJ = 25°C, IS = 12A, VGS = 0V  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
ns TJ = 25°C, IF = 12A, VDD = 15V  
di/dt = 300A/μs  
nC  
Qrr  
ton  
16  
Time is dominated by parasitic Inductance  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
–––  
Max.  
4.7  
44  
Units  
Junction-to-Case  
Junction-to-Case  
Junction-to-Ambient  
Junction-to-Ambient  
RθJC (Bottom)  
RθJC (Top)  
°C/W  
Rθ  
JA  
50  
RθJA (<10s)  
32  
2
www.irf.com  
IRFHM831PbF  
1000  
100  
10  
1000  
100  
10  
≤
≤ 60μs PULSE WIDTH  
Tj = 150°C  
60μs PULSE WIDTH  
Tj = 25°C  
VGS  
10V  
VGS  
10V  
TOP  
TOP  
8.0V  
4.5V  
3.8V  
3.5V  
3.3V  
3.0V  
2.8V  
8.0V  
4.5V  
3.8V  
3.5V  
3.3V  
3.0V  
2.8V  
BOTTOM  
BOTTOM  
2.8V  
2.8V  
1
1
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
DS  
, Drain-to-Source Voltage (V)  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
2.0  
1.5  
1.0  
0.5  
100  
10  
1
I
= 12A  
D
V
= 10V  
GS  
T
= 150°C  
J
T
= 25°C  
J
V
= 15V  
DS  
≤ 60μs PULSE WIDTH  
0.1  
2.0  
3.0  
4.0  
5.0  
-60 -40 -20  
T
0
20 40 60 80 100 120 140 160  
V
, Gate-to-Source Voltage (V)  
GS  
, Junction Temperature (°C)  
J
Fig 4. Normalized On-Resistance Vs. Temperature  
Fig 3. Typical Transfer Characteristics  
14  
10000  
1000  
100  
V
= 0V,  
= C  
f = 1 MHZ  
GS  
I = 12A  
V
V
V
= 24V  
= 15V  
= 6.0V  
D
DS  
DS  
DS  
C
C
C
+ C , C  
SHORTED  
ds  
iss  
gs  
gd  
12  
10  
8
= C  
rss  
oss  
gd  
= C + C  
ds  
gd  
Ciss  
Coss  
Crss  
6
4
2
0
10  
0
5
10  
15  
20  
1
10  
, Drain-to-Source Voltage (V)  
100  
Q
Total Gate Charge (nC)  
G
V
DS  
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage  
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage  
www.irf.com  
3
IRFHM831PbF  
100.0  
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R (on)  
DS  
10.0  
100μsec  
T
= 150°C  
10msec  
J
T
= 25°C  
J
1.0  
0.1  
1msec  
1
Tc = 25°C  
Tj = 150°C  
Single Pulse  
V
= 0V  
1.0  
GS  
0.1  
0.1  
1
10  
100  
0.2  
0.4  
0.6  
0.8  
V
, Drain-to-Source Voltage (V)  
V
, Source-to-Drain Voltage (V)  
DS  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode Forward Voltage  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
50  
LIMITED BY PACKAGE  
40  
30  
20  
10  
0
I
I
I
I
= 1.0A  
D
D
D
D
= 1.0mA  
= 250μA  
= 25μA  
25  
50  
75  
100  
125  
150  
-75 -50 -25  
0
25  
50  
75 100 125 150  
T , Case Temperature (°C)  
C
T
, Temperature ( °C )  
J
Fig 9. Maximum Drain Current Vs.  
Fig 10. Threshold Voltage Vs. Temperature  
Case (Bottom) Temperature  
10  
D = 0.50  
1
0.20  
0.10  
0.05  
0.1  
0.02  
0.01  
0.01  
SINGLE PULSE  
Notes:  
1. Duty Factor D = t1/t2  
( THERMAL RESPONSE )  
2. Peak Tj = P dm x Zthjc + Tc  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)  
4
www.irf.com  
IRFHM831PbF  
200  
160  
120  
80  
40  
35  
30  
25  
20  
15  
10  
5
I
D
I
= 12A  
D
TOP  
3.1A  
6.4A  
12A  
BOTTOM  
T
= 125°C  
= 25°C  
J
40  
T
J
0
0
2
4
6
8
10 12 14 16 18  
20  
25  
50  
75  
100  
125  
150  
V
, Gate-to-Source Voltage (V)  
Starting T , Junction Temperature (°C)  
GS  
J
Fig 13. Maximum Avalanche Energy vs. Drain Current  
Fig 12. On-Resistance vs. Gate Voltage  
V
(BR)DSS  
t
p
15V  
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
I
AS  
20V  
Ω
0.01  
t
p
Fig 14b. Unclamped Inductive Waveforms  
Fig 14a. Unclamped Inductive Test Circuit  
RD  
VDS  
VDS  
90%  
VGS  
D.U.T.  
RG  
+VDD  
-
10%  
VGS  
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1  
td(on)  
td(off)  
tr  
tf  
Fig 15a. Switching Time Test Circuit  
Fig 15b. Switching Time Waveforms  
www.irf.com  
5
IRFHM831PbF  
Driver Gate Drive  
P.W.  
P.W.  
Period  
D.U.T  
Period  
D =  
+
*
=10V  
V
GS  
ƒ
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
-
D.U.T. I Waveform  
SD  
+
‚
-
Reverse  
Recovery  
Current  
Body Diode Forward  
„
Current  
di/dt  
-
+
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  

V
DD  
VDD  
Re-Applied  
Voltage  
• dv/dt controlled by RG  
RG  
+
-
Body Diode  
Forward Drop  
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
Inductor Curent  
I
SD  
Ripple  
≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel  
HEXFET® Power MOSFETs  
Id  
Vds  
Vgs  
L
VCC  
DUT  
0
Vgs(th)  
1K  
Qgs1  
Qgs2  
Qgd  
Qgodr  
Fig 18. Gate Charge Waveform  
Fig 17. Gate Charge Test Circuit  
6
www.irf.com  
IRFHM831PbF  
PQFN 3.3x3.3 Outline Package Details  
8
7
6
5
1
2
3
4
For footprint and stencil design recommendations, please refer to application note AN-1154 at  
http://www.irf.com/technical-info/appnotes/an-1154.pdf  
PQFN 3.3x3.3 Part Marking  
3.3x3.3 PQFN PART MARKING DETAIL  
INTERNATIONAL  
RECTIFIER LOGO  
DATE CODE  
PART NUMBER  
ASSEMBLY  
MARKING CODE  
SITE CODE  
(Per Marking Spec)  
(Per SCOP 200-002)  
LOT CODE  
(Eng Mode - Min last 4 digits of EATI#)  
PIN 1  
IDENTIFIER  
(Prod Mode - 4 digits of SPN code)  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
www.irf.com  
7
IRFHM831PbF  
PQFN 3.3x3.3 Tape and Reel  
NOTE: Controlling dimensions in mm  
Std reel quantity is 4000 parts.  
DIMENSIONS  
METRIC  
IMPERIAL  
REEL DIMENSIONS  
CODE  
MIN  
MAX  
8.10  
4.10  
12.30  
5.55  
3.70  
3.70  
0.35  
1.30  
MIN  
MAX  
0.319  
0.161  
0.484  
0.219  
0.146  
0.146  
0.014  
0.051  
STANDARD OPTION (QTY 4000)  
A
B
C
D
E
F
7.90  
3.90  
11.70  
5.45  
3.50  
3.50  
0.25  
1.10  
0.311  
0.154  
0.461  
0.215  
0.138  
0.138  
0.010  
0.043  
METRIC  
MAX  
330.25 12.835 13.002  
IMPERIAL  
CODE  
MIN  
326.0  
20.2  
12.8  
1.5  
MIN MAX  
A
B
C
D
E
F
20.45  
13.50  
2.5  
0.795  
0.504  
0.059  
0.805  
0.531  
0.098  
102.0 REF  
4.016 REF  
G
H
17.8  
12.4  
18.3  
12.9  
0.701  
0.488  
0.720  
0.508  
G
Qualification Information†  
Industrial††  
(per JEDEC JESD47F††† guidelines)  
MSL1  
(per JEDEC J-STD-020D†††  
Qualification level  
Moisture Sensitivity Level  
RoHS Compliant  
PQFN 3.3mm x 3.3mm  
)
Yes  
†
Qualification standards can be found at International Rectifier’s web site  
http://www.irf.com/product-info/reliability  
††  
Higher qualification ratings may be available should the user have such requirements.  
Please contact your International Rectifier sales representative for further information:  
http://www.irf.com/whoto-call/salesrep/  
††† Applicable version of JEDEC standard at the time of product release.  
Notes:  
 Repetitive rating; pulse width limited by max. junction temperature.  
‚ Starting TJ = 25°C, L = 0.69mH, RG = 50Ω, IAS = 12A.  
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.  
„ R is measured at TJ of approximately 90°C.  
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.  
† Calculated continouous current based on maximum allowable junction temperature. Package is limited to 40A by  
production test capability.  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.9/2010  
8
www.irf.com  

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