IRFHM831TRPBF [INFINEON]
Control MOSFET for Buck Converters; 控制MOSFET的降压转换器型号: | IRFHM831TRPBF |
厂家: | Infineon |
描述: | Control MOSFET for Buck Converters |
文件: | 总8页 (文件大小:262K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD -97539A
IRFHM831PbF
HEXFET® Power MOSFET
VDS
30
V
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
RDS(on) max
(@VGS = 10V)
7.8
m
Qg (typical)
RG (typical)
7.3
0.5
nC
ID
PQFN 3.3mm x 3.3mm
40
A
(@Tc(Bottom) = 25°C)
Applications
• Control MOSFET for Buck Converters
Features and Benefits
Features
Benefits
Low Charge (typical 7.3nC)
Low Thermal Resistance to PCB (<4.7°C/W)
100% Rg tested
Lower Switching Losses
Enable Better Thermal Dissipation
Increased Reliability
Low Profile (<1.0mm)
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Compatible with Existing Surface Mount Techniques
Environmentally Friendlier
Increased Reliability
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFHM831TRPBF
IRFHM831TR2PBF
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
400
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
30
Units
VDS
V
VGS
±20
14
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
11
40
A
28
96
2.5
27
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
TJ
TSTG
Storage Temperature Range
Notes through are on page 8
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1
9/8/10
IRFHM831PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250μA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
V
/ T
J
ΔΒ DSS Δ
RDS(on)
–––
6.6
7.8
VGS = 10V, ID = 12A
GS = 4.5V, ID = 12A
mΩ
––– 10.7 12.6
V
VGS(th)
Gate Threshold Voltage
1.35
–––
–––
–––
–––
–––
82
1.8
-6.8
–––
–––
–––
2.35
V
VDS = VGS, ID = 25μA
V
Δ
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
GS(th)
IDSS
1.0
μA
VDS = 24V, VGS = 0V
150
V
V
V
DS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
GS = 20V
––– -100
GS = -20V
gfs
Qg
Qg
–––
16
–––
–––
11
S
VDS = 15V, ID = 12A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VGS = 10V, VDS = 15V, ID = 12A
Total Gate Charge
7.3
1.7
0.9
2.5
2.2
3.4
5.1
0.5
6.9
12
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
nC
ID = 12A
Qgodr
See Fig.17 & 18
Qsw
Qoss
RG
nC
VDS = 16V, VGS = 0V
Gate Resistance
Ω
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 15V, VGS = 4.5V
ID = 12A
Rise Time
–––
–––
–––
ns
Turn-Off Delay Time
6.2
4.7
RG=1.8Ω
See Fig.15
VGS = 0V
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 1050 –––
pF
Output Capacitance
–––
–––
190
80
–––
–––
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
50
Units
mJ
EAS
IAR
Avalanche Current
12
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
S
Continuous Source Current
MOSFET symbol
–––
––– 40
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
96
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
15
1.0
22
24
V
TJ = 25°C, IS = 12A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns TJ = 25°C, IF = 12A, VDD = 15V
di/dt = 300A/μs
nC
Qrr
ton
16
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
4.7
44
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
°C/W
Rθ
JA
50
RθJA (<10s)
32
2
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IRFHM831PbF
1000
100
10
1000
100
10
≤
≤ 60μs PULSE WIDTH
Tj = 150°C
60μs PULSE WIDTH
Tj = 25°C
VGS
10V
VGS
10V
TOP
TOP
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
BOTTOM
BOTTOM
2.8V
2.8V
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
100
10
1
I
= 12A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤ 60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
14
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 12A
V
V
V
= 24V
= 15V
= 6.0V
D
DS
DS
DS
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12
10
8
= C
rss
oss
gd
= C + C
ds
gd
Ciss
Coss
Crss
6
4
2
0
10
0
5
10
15
20
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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3
IRFHM831PbF
100.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10.0
100μsec
T
= 150°C
10msec
J
T
= 25°C
J
1.0
0.1
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.0
GS
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
3.0
2.5
2.0
1.5
1.0
0.5
50
LIMITED BY PACKAGE
40
30
20
10
0
I
I
I
I
= 1.0A
D
D
D
D
= 1.0mA
= 250μA
= 25μA
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T , Case Temperature (°C)
C
T
, Temperature ( °C )
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Bottom) Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
Notes:
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFHM831PbF
200
160
120
80
40
35
30
25
20
15
10
5
I
D
I
= 12A
D
TOP
3.1A
6.4A
12A
BOTTOM
T
= 125°C
= 25°C
J
40
T
J
0
0
2
4
6
8
10 12 14 16 18
20
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
GS
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFHM831PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFHM831PbF
PQFN 3.3x3.3 Outline Package Details
8
7
6
5
1
2
3
4
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3x3.3 Part Marking
3.3x3.3 PQFN PART MARKING DETAIL
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
ASSEMBLY
MARKING CODE
SITE CODE
(Per Marking Spec)
(Per SCOP 200-002)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
PIN 1
IDENTIFIER
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFHM831PbF
PQFN 3.3x3.3 Tape and Reel
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts.
DIMENSIONS
METRIC
IMPERIAL
REEL DIMENSIONS
CODE
MIN
MAX
8.10
4.10
12.30
5.55
3.70
3.70
0.35
1.30
MIN
MAX
0.319
0.161
0.484
0.219
0.146
0.146
0.014
0.051
STANDARD OPTION (QTY 4000)
A
B
C
D
E
F
7.90
3.90
11.70
5.45
3.50
3.50
0.25
1.10
0.311
0.154
0.461
0.215
0.138
0.138
0.010
0.043
METRIC
MAX
330.25 12.835 13.002
IMPERIAL
CODE
MIN
326.0
20.2
12.8
1.5
MIN MAX
A
B
C
D
E
F
20.45
13.50
2.5
0.795
0.504
0.059
0.805
0.531
0.098
102.0 REF
4.016 REF
G
H
17.8
12.4
18.3
12.9
0.701
0.488
0.720
0.508
G
Qualification Information†
Industrial††
(per JEDEC JESD47F††† guidelines)
MSL1
(per JEDEC J-STD-020D†††
Qualification level
Moisture Sensitivity Level
RoHS Compliant
PQFN 3.3mm x 3.3mm
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.69mH, RG = 50Ω, IAS = 12A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continouous current based on maximum allowable junction temperature. Package is limited to 40A by
production test capability.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.9/2010
8
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