IRFI4024H-117P [INFINEON]
DIGITAL AUDIO MOSFET; 数字音频MOSFET
| 型号： | IRFI4024H-117P |
| 厂家： | 
Infineon |
| 描述： | DIGITAL AUDIO MOSFET |
| 文件： | 总6页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97254
DIGITAL AUDIO MOSFET
IRFI4024H-117P
Key Parameters
g
Features
VDS
R
Qg typ.
Qsw typ.
55
V
m:
nC
nC
Ω
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low RDS(ON) for improved efficiency
Low Qg and Qsw for better THD and
improved efficiency
DS(ON) typ. @ 10V
48
8.9
4.3
2.3
150
RG(int) typ.
TJ max
°C
Low Qrr for better THD and lower EMI
Can delivery up to 100W per channel into
6Ω load in full-bridge configuration
amplifier
Lead-free package
TO-220 Full-Pak 5 PIN
G1, G2
Gate
D1, D2
Drain
S1, S2
Source
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings
g
Parameter
Drain-to-Source Voltage
Max.
55
Units
V
VDS
VGS
Gate-to-Source Voltage
±20
11
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
A
6.9
44
PD @TC = 25°C
PD @TC = 100°C
Power Dissipation
Power Dissipation
14
W
5.4
Linear Derating Factor
Single Pulse Avalanche Energyd
0.11
7.4
W/°C
mJ
EAS
TJ
Operating Junction and
-55 to +150
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
g
Parameter
Typ.
–––
Max.
9.21
65
Units
°C/W
Junction-to-Case f
RθJC
RθJA
Junction-to-Ambient (free air)
–––
www.irf.com
1
08/24/06
IRFI4024H-117P
Electrical Characteristics @ T = 25°C (unless otherwise specified)
g
J
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55
–––
–––
2.0
–––
–––
V
∆ΒVDSS/∆TJ
RDS(on)
54
––– mV/°C Reference to 25°C, ID = 1mA
mΩ
48
60
VGS = 10V, ID = 7.7A e
VGS(th)
–––
4.0
V
V
DS = VGS, ID = 25µA
DS = 55V, VGS = 0V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -9.17 ––– mV/°C
–––
–––
–––
–––
6.5
–––
–––
–––
–––
–––
8.9
1.6
0.77
3.5
3.0
4.3
2.3
5.9
2.0
13
20
250
200
-200
–––
13
µA
V
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA VGS = 20V
VGS = -20V
gfs
S
VDS = 25V, ID = 7.7A
Qg
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG(int)
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Internal Gate Resistance
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 44V
nC VGS = 10V
ID = 7.7A
See Fig. 6 and 15
Ω
–––
–––
–––
–––
–––
–––
–––
–––
VDD = 28V, VGS = 10Vꢁe
Rise Time
ID = 7.7A
td(off)
tf
Turn-Off Delay Time
ns RG = 2.5Ω
Fall Time
3.4
320
47
Ciss
Coss
Crss
LD
Input Capacitance
VGS = 0V
pF VDS = 50V
ƒ = 1.0MHz,
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
31
See Fig. 5
4.5
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Diode Characteristics
g
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS @ TC = 25°C
ISM
–––
–––
11
(Body Diode)
Pulsed Source Current
(Body Diode)ꢁc
A
showing the
integral reverse
G
–––
–––
44
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
17
1.3
26
17
V
TJ = 25°C, IS = 7.7A, VGS = 0V e
ns TJ = 25°C, IF = 7.7A
Qrr
di/dt = 100A/µs
e
11
nC
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.25mH, RG = 25Ω, IAS = 7.7A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ Specifications refer to single MosFET.
2
www.irf.com
IRFI4024H-117P
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
I
= 7.7A
D
V
= 10V
GS
10
1
1.5
1.0
0.5
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
2
4
6
8
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
12.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 7.7A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
10.0
rss
oss
gd
V
V
V
= 44V
= 28V
= 11V
= C + C
DS
DS
DS
ds
gd
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
10
0
2
4
6
8
10
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFI4024H-117P
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
10
1
100µsec
T
= 25°C
J
1
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
, Source-to-Drain Voltage (V)
1
10
, Drain-to-Source Voltage (V)
100
V
V
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4.0
12
3.5
3.0
2.5
2.0
1.5
1.0
10
8
I
= 25µA
D
6
4
2
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
100
10
D = 0.50
0.20
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
1
0.1
0.10
0.05
0.02
0.01
0.8124
2.5228
2.7309
3.1439
0.000034
0.000535
0.009731
1.22140
τ
τ
J τJ
τ
Cτ
τ
1τ1
τ
τ
2τ2
3τ3
4τ4
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRFI4024H-117P
220
180
140
100
60
30
25
20
15
10
5
I
I
= 7.7A
D
D
TOP
1.8A
3.5A
BOTTOM 7.7A
T
= 125°C
J
T
= 25°C
J
20
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13a. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
0.01Ω
t
p
I
AS
Fig 13c. Unclamped Inductive Waveforms
Fig 13b. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b Gate Charge Waveform
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5
IRFI4024H-117P
TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117
(Dimensions are shown in millimeters (inches))
TO-220 Full-Pak 5-Pin Part Marking Information
TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/05
6
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