IRFMG40DPBF [INFINEON]
Power Field-Effect Transistor, 3.9A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA;
| 型号： | IRFMG40DPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 3.9A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
| 文件： | 总7页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90710B
IRFMG40
1000V, N-CHANNEL
POWER MOSFET
THRU-HOLE (TO-254AA)
HEXFET® MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on)
IRFMG40 3.5Ω
ID
3.9A
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
3.9
2.5
D
D
GS
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
16
DM
@ T = 25°C
P
125
W
W/°C
V
D
C
Linear Derating Factor
1.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
20
GS
E
530
mJ
A
AS
I
3.9
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
12.5
1.0
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300(0.063in./1.6mm from case for 10 sec)
9.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
2/11/02
IRFMG40
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
1000
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
1.4
—
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
3.3
—
—
—
—
—
—
—
3.5
4.2
4.0
—
25
250
V
V
= 10V, I = 2.5A
D
DS(on)
GS
GS
Ω
➃
= 10V, I = 3.9A
D
V
g
V
S ( )
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
V
> 15V, I
= 2.5A ➃
DS
V
DS
I
= 800V ,V =0V
DSS
DS GS
µA
—
V
= 800V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
100
-100
120
V
= 20V
= -20V
GSS
GSS
g
GS
nA
nC
V
GS
V
=10V, I =3.9A
GS D
Gate-to-Source Charge
—
—
12
V
= 400V |
gs
DS
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
—
—
—
—
—
—
—
—
—
—
—
6.8
75
30
50
170
50
—
gd
t
t
t
t
V
DD
= 400V, I = 3.9A,
=10V,R = 9.1Ω |
GS G
d(on)
D
V
r
ns
d(off)
f
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
L
+ L
Total Inductance
nH
S
D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1700
250
100
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
3.9
16
1.8
1000 nS
5.6 µC
S
SM
SD
rr
A
V
T = 25°C, I = 3.9A, V
= 0V ➃
j
S
GS
T = 25°C, I = 3.9A, di/dt ≤ 100A/µs
j
F
Q
V
DD
≤ 50V ➃
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-sink
Junction-to-Ambient
—
—
—
—
0.21
—
1.0
—
48
thJC
thCS
thJA
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRFMG40
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.9A
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
www.irf.com
3
IRFMG40
I
=3.9A
D
13a & b
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
www.irf.com
IRFMG40
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFMG40
15V
DRIVER
L
V
D S
D.U .T
AS
.
R
G
+
-
V
D D
I
A
20V
1
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)D SS
Fig 12c. Maximum Avalanche Energy
t
p
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
0
1V
Q
G
.3µF
10 V
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFMG40
Footnotes:
➂
I
V
≤ 3.9A, di/dt ≤ 100A/µs,
≤ 1000V, T ≤ 150°C
➀
Repetitive Rating; Pulse width limited by
maximum junction temperature.
SD
DD
J
➃
|
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Equipment limitation
➁
V
= 50V, starting T = 25°C, L= 69mH
J
DD
Peak I = 3.9A, V
= 10V
L
GS
Case Outline and Dimensions — TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
13.84 [.545]
13.59 [.535]
B
22.73 [.895]
21.21 [.835]
B
13.84 [.545]
13.59 [.535]
R 1.52 [.060]
1
2
3
1
2
3
4.06 [.160]
3.56 [.140]
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCINGPER ASME Y14.5M-1994.
2. ALL DIME NS IONS ARE S HOWN IN MILLIME T ERS [INCHES ].
3. CONTROLLINGDIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TOJEDECOUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
www.irf.com
7
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