IRFP22N50A [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=22A); 功率MOSFET ( VDSS = 500V , RDS(ON)最大值= 0.23ohm ,ID = 22A )![IRFP22N50A](http://pdffile.icpdf.com/pdf1/p00077/img/icpdf/IRFP22N50A_407451_icpdf.jpg)
型号: | IRFP22N50A |
厂家: | ![]() |
描述: | Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=22A) |
文件: | 总8页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PD- 91833C
SMPS MOSFET
IRFP22N50A
HEXFET® Power MOSFET
Applications
VDSS
500V
RDS(on) max
ID
22A
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
0.23Ω
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
D @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
22
I
14
88
A
IDM
PD @TC = 25°C
Power Dissipation
277
W
W/°C
V
Linear Derating Factor
2.2
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
4.8
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l Full Bridge Converters
l Power Factor Correction Boost
Notes through ꢀ are on page 8
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1
12/15/99
IRFP22N50A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
500 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.23
2.0 ––– 4.0
Ω
VGS = 10V, ID = 13A
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 13A
ID = 22A
gfs
12 ––– –––
S
Qg
––– ––– 120
––– ––– 32
––– ––– 52
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
26 –––
94 –––
47 –––
47 –––
VDD = 250V
ID = 22A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 11Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3450 –––
––– 513 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
27 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
––– 4935 –––
––– 137 –––
––– 264 –––
Coss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
1180
22
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
28
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.45
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
22
88
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 570 850
––– 6.1 9.2
V
TJ = 25°C, IS = 22A, VGS = 0V
ns
TJ = 25°C, IF = 22A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP22N50A
100
10
1
100
10
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
1
4.5V
0.1
0.01
4.5V
20µs PULSE WIDTH
T = 150 C
20µs PULSE WIDTH
°
°
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
22A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
V
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP22N50A
20
16
12
8
100000
I = 22A
D
V
C
C
C
= 0V,
f = 1M Hz
G S
iss
= C
= C
= C
+ C
+ C
,
C
S HO RTED
gs
gd
ds
gd
ds
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
rss
oss
gd
10000
1000
100
10
C
iss
C
os s
rs s
C
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
0
A
0
20
40
60
80
100
120
1
10
100
1000
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
°
T = 25 C
C
10ms
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.6
1.0
1.4
1.8
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP22N50A
RD
25
20
15
10
5
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
P
0.02
0.01
DM
0.01
0.001
SINGLE PULSE
t
1
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
thJC C
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP22N50A
3000
2500
2000
1500
1000
500
1 5V
I
D
TOP
9.8A
14A
22A
BOTTOM
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
6 4 0
Q
Q
GD
GS
6 3 0
6 2 0
6 1 0
6 0 0
5 9 0
5 8 0
5 7 0
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
A
0
4
8
1 2
1 6
2 0
2 4
V
GS
I
, Avalanche Current (A)
av
3mA
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
6
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IRFP22N50A
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP22N50A
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
-
D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
M
B
M
2.50 (.089)
1.50 (.059)
- B
-
- A
-
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
1
2
3
2
3
CONTROLLING DIMENSION : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
- C
-
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
1 - GATE
3X
2 - DRAIN
3 - SOURCE
4 - DRAIN
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
2X
3.40 (.133)
3.00 (.118)
TO-247AC Part Marking Information
E X A M P L E
:
TH IS IS A N IR F P E 3 0
W ITH A S S E M B L Y
L O T C O D E 3 A 1 Q
A
PA R T N U M B E R
IN TER N A TIO N A L
R E C TIFIE R
L O G O
IR FP E 30
3 A 1 Q 9 3 0 2
D A TE C O D E
(YY W W )
A S SE M B L Y
L O T
C O D E
Y Y
= YE A R
W W W E E K
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 4.87mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 22A. (See Figure 12a)
ISD ≤ 22A, di/dt ≤ 190A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 12/99
8
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IRFP23N50LPBF
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
INFINEON
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