IRFP460AS [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A); 功率MOSFET （ VDSS = 500V ， RDS（ON）最大值= 0.27ohm ，ID = 20A ）
| 型号： | IRFP460AS |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) |
| 文件： | 总8页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94011A
SMPS MOSFET
IRFP460AS
HEXFET® Power MOSFET
Applications
l SMPS, UPS, Welding and High Speed
VDSS
Rds(on) max
ID
Power Switching
500V
0.27Ω
20A
Benefits
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Isolated Central Mounting Hole
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
l Solder plated and leadformed for surface mounting
Description
Third Generation HEXFET®s from International Rectifier provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
SMD-247
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also provides
greater creepage distance between pins to meet the requirements of
most safety specifications.
This plated and leadformed version of the TO-247 package allows
the package to be surface mounted in an application.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
20
13
80
A
PD @TC = 25°C
Power Dissipation
280
W
W/°C
V
Linear Derating Factor
2.2
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
3.8
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Mounting torqe, 6-32 or M3 screw
Maximum Reflow Temperature
°C
°C
10 lbf•in (1.1N•m)
230 (Time above 183 °C
should not exceed 100s)
Typical SMPS Topologies:
l Full Bridge
l PFC Boost
Notes through ꢀare on page 8
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1
01/17/01
IRFP460AS
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
500 ––– –––
––– 0.61 –––
––– ––– 0.27
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
2.0
––– 4.0
V
VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 500V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 30V
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
11 ––– –––
S
VDS = 50V, ID = 12A
ID = 20A
Qg
––– ––– 105
––– ––– 26
––– ––– 42
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
18 –––
55 –––
45 –––
39 –––
VDD = 250V
ID = 20A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 13Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3100 –––
––– 480 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
18 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
––– 4430 –––
––– 130 –––
––– 140 –––
Coss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
960
20
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
28
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.45
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
20
80
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.8
––– 480 710
––– 5.0 7.5
V
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP460AS
100
10
1
100
10
1
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
°
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
20A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
5.0
6.0
7.0 8.0
9.0
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP460AS
20
16
12
8
100000
20A
=
I
D
V G S = 0V,
Ciss = Cgs + Cgd
Crss = C gd
Coss = Cds + C gd
f = 1MHz
Cds SHORTED
,
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
10000
1000
100
10
C
C
iss
oss
rss
C
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
0
A
0
20
40
60
80
100
1
10
100
1000
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
10ms
1000
J
V
= 0 V
GS
1.4
1
0.1
0.2
10
100
10000
0.4
V
0.6
0.8
1.0
1.2
1.6
V
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP460AS
RD
20
15
10
5
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP460AS
2400
2000
1600
1200
800
400
0
I
1 5V
D
TOP
8.9A
13A
BOTTOM 20A
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
620
Q
Q
GD
GS
V
G
600
580
560
540
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
A
0
4
8
12
16
20
V
GS
I
, Avalanche Current (A)
av
3mA
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
6
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IRFP460AS
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP460AS
SMD-247 Package Outline
0.25 [.010]
D
B
A
5.30 [.208]
4.70 [.186]
3.65 [.143]
3.55 [.140]
15.90 [.625]
15.30 [.603]
13.70 [.539]
13.50 [.532]
Ø
B
2.50 [.099]
1.50 [.060]
0.25 [.010]
D
B
5.70 [.224]
5.30 [.209]
5.50 [.217]
4
0.95 [.037]
0.35 [.014]
16.20 [.637]
16.00 [.630]
2.75 [.108]
2.25 [.089]
20.30 [.799]
19.70 [.776]
2X R
D
4
3.0 [.118]
MAX.
C
1
2
3
5.65 [.222]
4.65 [.183]
0.20 [.225]
D
1.40 [.055]
1.00 [.040]
5.45 [.215]
2X
0.25 [.010]
2.65 [.104]
2.15 [.085]
D
C A
2X
LEAD ASSIGNMENTS
NOTES:
MOS F ET
IGBT
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER.
1 - GATE
1 - GATE
2 - COL L E CT OR
3 - EMITT ER
2 - DRAIN
3 - SOURCE
4 - DRAIN
0.80 [.031]
0.40 [.016]
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. TO-247 S MD IS A MODIFIED TO-247AC.
2X
4 - COL L E CT OR
SMD-247 Part Marking Information
EXAMPLE: THIS IS AN IRFP450S WITH
ASSEMBLYLOT CODE 3A1Q
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFP450S
3A1Q 9906
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WE E K
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 4.3mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 20A. (See Figure 12)
ISD ≤ 20A, di/dt ≤ 125A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
8
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