IRFPS3810PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRFPS3810PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总8页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95703
IRFPS3810PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
VDSS = 100V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.009Ω
G
l Fully Avalanche Rated
ID = 170A
l Lead-Free
S
Description
The HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
Super-247™
Absolute Maximum Ratings
Parameter
Max.
170
120
670
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TC = 25°C
Power Dissipation
580
W
W/°C
V
Linear Derating Factor
3.8
VGS
EAS
IAR
Gate-to-Source Voltage
± 30
1350
100
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
58
mJ
V/ns
2.3
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.26
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
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1
9/10/04
IRFPS3810PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.009
Ω
V
S
VGS = 10V, ID = 100A
VDS = 10V, ID = 250µA
VDS = 50V, ID = 100A
3.0
52
––– 5.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– 260 390
VDS = 100V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 30V
IGSS
nA
VGS = -30V
ID = 100A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
––– 160 250
––– 24 –––
––– 270 –––
––– 45 –––
––– 140 –––
49
74
nC VDS = 80V
VGS = 10V
VDD = 50V
ID = 100A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.03Ω
VGS = 10V
D
S
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
5.0 –––
–––
6mm (0.25in.)
nH
G
from package
13
and center of die contact
Ciss
Input Capacitance
––– 6790 –––
––– 2470 –––
––– 990 –––
––– 10740 –––
––– 1180 –––
––– 2210 –––
VGS = 0V
Coss
Output Capacitance
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– –––
170
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 670
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 220 330
V
TJ = 25°C, IS = 100A, VGS = 0V
ns
TJ = 25°C, IF = 100A
Qrr
ton
––– 1640 2460 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 0.27mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 100A. (See Figure 12)
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
ISD ≤ 100A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C
2
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IRFPS3810PbF
1000
100
10
1000
100
10
VGS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
TOP
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
BOTTOM 5.0V
1
5.0V
5.0V
0.1
0.01
50µs PULSE WIDTH
50µs PULSE WIDTH
°
T = 175 C
J
°
T = 25 C
J
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
170A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
100
10
1
°
T = 25 C
J
V
= 50V
DS
50µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5
6
7
8
9
10 11 12
13
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFPS3810PbF
20
16
12
8
I
D
= 100A
15000
V
C
= 0V,
f = 1 MHZ
GS
V
V
V
= 80V
= 50V
= 20V
= C + C
,
C
ds
SHORTED
DS
DS
DS
iss
gs gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
5000
0
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
10
100
0
0
100
200
300
400
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 175 C
J
100
100µsec
1msec
°
T = 25 C
J
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0 V
GS
1
10
0.2
0.8
1.4
2.0
2.6
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFPS3810PbF
RD
200
160
120
80
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
40
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
0.02
0.01
0.01
0.001
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFPS3810PbF
3000
2500
2000
1500
1000
500
15V
I
D
TOP
41A
71A
BOTTOM 100A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
0
t
25
50
75
100
125
150
175
p
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFPS3810PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRFPS3810PbF
Case Outline and Dimensions — Super-247
Super-247 (TO-274AA) Part Marking Information
E X A M P L E : T H IS IS A N IR F P S 3 7 N 5 0 A W IT H
A S S E M B L Y L O T C O D E 1 7 8 9
A S S E M B L E D O N W W 1 9 , 1 9 9 7
IN T H E A S S E M B L Y L IN E "C "
P A R T N U M B E R
IN T E R N A T IO N A L R E C T IF IE R
IR F P S 3 7N 5 0 A
L O G O
7 1 9 C
1 7
8 9
D A T E C O D E
(Y Y W W )
A S S E M B L Y L O T C O D E
Y Y = Y E A R
W W = W E E K
N o te : "P " in a s se m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
T O P
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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