IRFR7746PBF_15 [INFINEON]
Brushed Motor drive applications;
| 型号： | IRFR7746PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Brushed Motor drive applications |
| 文件： | 总12页 (文件大小：571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFR7746PbF
IRFU7746PbF
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
RDS(on) typ.
max
75V
9.5m
11.2m
59A
ID (Silicon Limited)
ID (Package Limited)
56A
D
S
Benefits
S
D
G
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
G
D
S
Gate
Drain
Source
Standard Pack
Base part number Package Type
Form
Orderable Part Number
Quantity
75
Tube
IRFR7746PbF
IRFR7746TRPbF
IRFU7746PbF
IRFR7746PbF
IRFU7746PbF
D-Pak
I-Pak
Tape and Reel
Tube
2000
75
30
25
20
15
10
5
60
50
40
30
20
10
I
= 35A
Limited by package
D
T
J
= 125°C
= 25°C
T
J
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
V
Gate -to -Source Voltage (V)
C
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRFR/U7746PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
59
42
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
56
230*
99
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
Linear Derating Factor
0.66
± 20
VGS
Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
-55 to + 175
300
°C
Avalanche Characteristics
EAS (Thermally limited)
EAS (Thermally limited)
IAR
EAR
116
160
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
–––
Max.
1.52
50
Units
Junction-to-Case
RJC
RJA
RJA
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
°C/W
110
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
75
––– –––
53 ––– mV/°C Reference to 25°C, ID = 1mA
9.5 11.2
V
VGS = 0V, ID = 250µA
–––
–––
V(BR)DSS/TJ
RDS(on)
VGS = 10V, ID = 35A
GS = 6.0V, ID = 18A
m
V
––– 11.2 –––
2.1 –––
––– –––
––– ––– 150
––– ––– 100
––– ––– -100
V
VGS(th)
IDSS
Gate Threshold Voltage
3.7
1.0
VDS = VGS, ID = 100µA
DS =75 V, VGS = 0V
VDS =75V,VGS = 0V,TJ =125°C
V
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
V
GS = 20V
GS = -20V
IGSS
RG
nA
–––
1.6
–––
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 190µH, RG = 50, IAS = 35A, VGS =10V.
ISD 35A, di/dt 570A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
R is measured at TJ approximately 90°C.
.
C
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
*
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V
Pulse drain current is limited at 224A by source bonding technology.
2
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IRFR/U7746PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
112
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
59
–––
89
S
VDS = 10V, ID =35A
Qg
ID = 35A
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
14
–––
–––
–––
–––
–––
VDS = 38V
VGS = 10V
nC
Qgd
18
Qsync
td(on)
tr
41
7.9
30
VDD = 38V
ID = 35A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
34
21
–––
–––
–––
–––
–––
RG= 2.7
V
GS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3107
257
159
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
Coss eff.(TR)
–––
–––
234
299
–––
–––
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
IS
–––
–––
59
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
ISM
–––
–––
–––
–––
230*
1.2
S
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 35A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
8.1
27
32
26
36
1.7
––– V/ns TJ = 175°C,IS = 35A,VDS = 75V
–––
–––
–––
–––
–––
TJ = 25°C
VDD = 64V
IF = 35A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
TJ = 25°C
IRRM
3
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IRFR/U7746PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs
Tj = 175°C
PULSE WIDTH
60µs
Tj = 25°C
PULSE WIDTH
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 35A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
= 25V
J
1
V
DS
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
100
14.0
V
C
= 0V,
f = 1 MHZ
GS
= C + C , C SHORTED
I
= 35A
V
iss
gs
gd ds
D
C
= C
12.0
10.0
8.0
rss
gd
= 60V
= 38V
DS
C
= C + C
oss
ds
gd
V
DS
VDS= 15V
C
iss
C
C
oss
rss
6.0
4.0
2.0
10
0.0
0.1
1
10
100
0
10 20 30 40 50 60 70 80
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
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Gate-to-Source Voltage
4
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IRFR/U7746PbF
1000
100
10
100
10
100µsec
Limited by Package
1msec
T
= 175°C
J
OPERATION IN THIS AREA
T
= 25°C
J
LIMITED BY R
(on)
DS
1
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.01
V
= 0V
GS
0.1
0.1
1
10
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.6
94
Id = 1.0mA
92
0.5
0.4
0.3
0.2
0.1
0.0
90
88
86
84
82
80
78
76
0
10 20 30 40 50 60 70 80
Drain-to-Source Voltage (V)
-60
-20
20
60
100
140
180
T
, Temperature ( °C )
V
J
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
50.0
VGS = 5.5V
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0
50
I
100
150
200
, Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
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IRFR/U7746PbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
Notes:
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
140
120
100
80
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
BOTTOM 1.0% Duty Cycle
= 35A
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
60
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
40
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
20
0
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
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IRFR/U7746PbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
14
12
10
8
I
= 24A
= 64V
F
V
R
T = 25°C
J
T = 125°C
J
6
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 10mA
ID = 1.0A
4
2
0
-60 -40 -20 0 20 40 60 80 100120140160180
0
100 200 300 400 500 600 700 800 9001000
T
, Temperature ( °C )
di /dt (A/µs)
F
J
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
200
14
12
10
8
I
= 24A
= 64V
I
= 35A
= 64V
F
F
180
160
140
120
100
80
V
V
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
4
60
2
40
20
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
200
I
= 35A
= 64V
F
180
160
140
120
100
80
V
R
T = 25°C
J
T = 125°C
J
60
40
20
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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IRFR/U7746PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 1 = 2001
WEEK 16
IRFR120
116A
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly line position
ASSEMBLY
LOT CODE
indicates "Lead-Free"
"P" in assembly line position indicates
"Lead-Free" qualification to the consumer-level
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
OR
IRFR120
12 34
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 1 = 2001
WEEK 16
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFR/U7746PbF
I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
WITH ASSEMBLY
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 1 = 2001
WEEK 19
IRFU120
119A
78
LOT CODE 5678
ASSEMBLED ON WW 19, 2001
56
IN THE ASSEMBLY LINE "A"
LINE A
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates Lead-Free"
OR
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56
78
YEAR 1 = 2001
ASSEMBLY
LOT CODE
WEEK 19
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFR/U7746PbF
D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFR/U7746PbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
D-Pak
I-Pak
Moisture Sensitivity Level
RoHS Compliant
MSL1
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated EAS (L =1mH) = 160mJ on page 2
Updated note 10 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V” on page 2
11/7/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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