IRG4BC10KD [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ） typ.2.39V ， @ VGE = 15V ， IC = 5.0A ）
| 型号： | IRG4BC10KD |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) |
| 文件： | 总10页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -91734B
IRG4BC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
UltraFast IGBT
C
Features
• High short circuit rating optimized for motor control,
VCES = 600V
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
VCE(on) typ. = 2.39V
• Combines low conduction losses with high
switching speed
G
• Tighter parameter distribution and higher efficiency
than previous generations
@VGE = 15V, IC = 5.0A
E
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
n-channel
Benefits
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
9.0
IC @ TC = 100°C
5.0
ICM
18
A
ILM
18
IF @ TC = 100°C
4.0
IFM
16
tsc
10
µs
V
VGE
20
38
PD @ TC = 25°C
Maximum Power Dissipation
W
PD @ TC = 100°C Maximum Power Dissipation
15
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
Max.
3.3
7.0
Units
RθJC
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
RθJC
°C/W
RθCS
0.50
–––
80
RθJA
–––
Wt
2 (0.07)
–––
g (oz)
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1
4/24/2000
IRG4BC10KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltageƒ
600
—
—
—
—
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.58
V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
—
2.39 2.62
IC = 5.0A
VGE = 15V
—
3.25
2.63
—
—
—
V
IC = 9.0A
See Fig. 2, 5
—
IC = 5.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
3.0
—
6.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance „
1.2 1.8
—
S
VCE = 50V, IC = 5.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
—
250
1000
µA
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 4.0A See Fig. 13
C = 4.0A, TJ = 150°C
VGE 20V
VFM
IGES
Diode Forward Voltage Drop
1.5 1.8
1.4 1.7
V
I
Gate-to-Emitter Leakage Current
—
100 nA
=
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
19
29
IC = 5.0A
Qge
Qgc
td(on)
tr
2.9 4.3
nC
ns
VCC = 400V
VGE = 15V
See Fig.8
9.8
49
28
15
—
—
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
97 150
140 210
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail"
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.25
0.14
—
—
mJ and diode reverse recovery
See Fig. 9,10,14
0.39 0.48
—
—
µs
VCC = 360V, TJ = 125°C
GE = 15V, RG = 100Ω , VCPK < 500V
TJ = 150°C, See Fig. 10,11,14
V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
46
32
—
—
—
—
—
—
—
—
—
42
57
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail"
ns
Turn-Off Delay Time
Fall Time
100
310
0.56
7.5
220
29
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ and diode reverse recovery
nH
pF
ns
A
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
See Fig. 7
7.5
28
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
38
IF = 4.0A
VR = 200V
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
2.9 5.2
3.7 6.7
Qrr
40
60
nC
70 105
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
280
235
—
—
2
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IRG4BC10KD
6.0
5.0
4.0
3.0
2.0
1.0
0.0
For both:
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
G ate drive as specified
9.2
Power Dissipation =
W
Squa re wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
°
T = 25 C
J
10
°
T = 150 C
J
°
T = 150 C
J
°
T = 25 C
J
V
= 50V
V
= 15V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
5
10
15 20
1.0
2.0
V
3.0
4.0
5.0 6.0 7.0
V
, Gate-to-Emitter Voltage (V)
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4BC10KD
5.0
4.0
3.0
2.0
1.0
10
V
= 15V
GE
80 us PULSE WIDTH
I
= 10A
C
8
6
I
I
=
5A
C
C
4
= 2.5A
2
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
°
, Junction Temperature ( C)
T
°
, Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10KD
400
300
200
100
0
20
16
12
8
V
= 0V,
f = 1MHz
C
V
I
= 400V
= 5.0A
GE
CC
C
C
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
res
gc
= C + C
C
oes
ce
C
ies
4
C
oes
res
C
0
1
10
100
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
0.40
0.38
0.36
0.34
0.32
0.30
50Ω
R
= O
= 15V
V
V
T
= 480V
G
CC
GE
J
V
= 15V
= 25
GE
°
V
CC
= 480V
C
I
= 5.0A
C
I
=
A
10
C
1
I
I
=
=
A
A
5
C
C
2.5
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
20
40
60
80
100
°
T , Junction Temperature ( C )
R
G
, Gate Resistance
( Ω )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC10KD
2.0
100
10
1
R
T
= 50Ω
G
J
V
T
= 20V
GE
J
= 125o C
°
= 150 C
V
= 480V
= 15V
CC
V
GE
1.5
1.0
0.5
0.0
SAFE OPERATING AREA
10
0
2
4
6
8
10
1
100
1000
V
, Collector-to-Emitter Voltage (V)
I
, Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
100
T
= 150°C
= 125°C
10
J
T
J
T
=
25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage D rop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC10KD
50
45
40
35
30
25
20
14
12
10
8
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
F
I
I
I
= 8.0A
= 4.0A
F
F
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
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7
IRG4BC10KD
Same type
device as
D.U.T.
430µF
80%
90%
of Vce
D.U.T.
10%
V
ge
V
C
90%
t
d(off)
10%
5%
I
Fig. 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
C
t
t
f
r
I
t
d(on)
t=5µs
E
E
off
on
E
= (E +E )
on off
ts
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
E on = Vce Ic dt
t4
∫
Erec =
t1
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC10KD
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µ F
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
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9
IRG4BC10KD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG= 100Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-220AB
10.54 (.415)
10.29 (.405)
N O TE S :
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
1
D IM E N S IO N S & T O LE R A N C IN G
4.69 (.185)
4.20 (.165)
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H ES ).
C O N FO R M S TO JE D E C O U TLIN E
T O -220AB .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LE A D A S S IG N M E N T S
1
2
3
1
2
3
4
- G A TE
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e ns io ns in M illim e ters a nd (In c he s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
10
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