IRG4BC10SD-S [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.10V ， @ VGE = 15V ， IC = 2.0A ）
| 型号： | IRG4BC10SD-S |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) |
| 文件： | 总12页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94255
IRG4BC10SD-S
IRG4BC10SD-L
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Standard Speed
CoPack IGBT
Features
C
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
VCES = 600V
V
CE(on) typ. = 1.10V
• Very Tight Vce(on) distribution
G
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
@VGE = 15V, IC = 2.0A
E
• Industry standard D2Pak & TO-262 packages
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
D2Pak
IRG4BC10SD-S
TO-262
IRG4BC10SD-L
Absolute Maximum Ratings
Parameter
Max.
600
14
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
8.0
18
ICM
A
ILM
18
IF @ TC = 100°C
4.0
18
IFM
VGE
± 20
38
V
PD @ TC = 25°C
Maximum Power Dissipation
W
PD @ TC = 100°C Maximum Power Dissipation
15
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
Typ.
–––
Max.
3.3
Units
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
Junction-to-Case - Diode
–––
7.0
°C/W
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount ꢀ
0.50
–––
80
–––
Junction-to-Ambient (PCB Mount, steady state) –––
Weight –––
–––
40
2.0(0.07)
–––
g (oz)
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1
06/12/01
IRG4BC10SD-S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage 600
—
—
—
V
VGE = 0V, IC = 250µA
—
—
—
—
3.0
—
0.64
V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
1.58 1.8
IC = 8.0A
VGE = 15V
2.05
1.68
—
—
—
V
IC = 14.0A
See Fig. 2, 5
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-9.5
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
3.65 5.48
—
S
VCE = 100V, IC =8.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
—
250
1000
µA
V
GE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
1.5 1.8
1.4 1.7
V
IC =4.0A
See Fig. 13
IC =4.0A, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15 22
IC = 8.0A
Qge
Qgc
td(on)
tr
2.42 3.6
6.53 9.8
nC VCC = 400V
VGE = 15V
See Fig. 8
76
32
—
—
TJ = 25°C
ns
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
815 1200
720 1080
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.31
3.28
—
—
mJ See Fig. 9, 10, 18
3.60 10.9
1.46 2.6
mJ IC = 5.0A
70
36
—
—
—
—
—
—
—
—
—
42
57
TJ = 150°C, See Fig. 10,11, 18
IC = 8.0A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
890
890
3.83
7.5
280
30
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
4.0
28
ƒ = 1.0MHz
TJ = 25°C See Fig.
38
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF =4.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
2.9 5.2
3.7 6.7
VR = 200V
Qrr
40
60
70 105
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
280
235
—
—
Details of note through are on the last page
2
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IRG4BC10SD-S/L
10.0
8.0
6.0
4.0
2.0
0.0
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 9.2W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
60% of rated
voltage
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
°
T = 25 C
J
°
°
T = 150 C
T = 150 C
J
J
10
°
T = 25 C
J
V
= 15V
V
= 50V
GE
CC
80µs PULSE WIDTH
5µsPULSEWIDTH
1
0.5
1.0
1.5
2.0 2.5 3.0
6
8
10 12
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BC10SD-S/L
3.00
2.50
2.00
1.50
1.00
16
V
= 15V
GE
80 us PULSE WIDTH
I
= 16A
C
12
8
I
I
=
=
8A
4A
C
C
4
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
°
, Junction Temperature ( C)
T
°
, Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10SD-S/L
20
15
10
5
500
400
300
200
100
0
V
I
= 400V
= 8A
CC
C
V
C
= 0V,
f = 1MHz
C
GE
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
gc
res
C
= C + C
ce
oes
C
ies
C
C
oes
res
0
1
10
100
0
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 8 - Typical Gate Charge vs.
Fig. 7 - Typical Capacitance vs.
Gate-to-Emitter Voltage
Collector-to-Emitter Voltage
3.60
3.55
3.50
3.45
3.40
3.35
3.30
100
10
1
100Ω
= 15V
= 480V
V
= 480V
R
V
V
CC
= O
CC
GE
G
GE
V
T
= 15V
= 25
= 8A
°
C
J
C
I
I
=
16A
C
I
I
=
=
A
A
8
4
C
C
0.1
0
20
40
60
80
100
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C )
RG , Gate Resistance (Ω)
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC10SD-S/L
100
10
1
15
V
T
= 20V
R
T
= 100
100 Ω
GE
J
G
J
= 125 oC
°
= 150 C
V = 480V
= 15V
GE
CC
V
12
9
6
3
SAFE OPERATING AREA
10
0
0
4
8
12
16
20
1
100
1000
I
, Collector Current (A)
V
, Collector-to-Emitter Voltage (V)
C
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector Current
100
T
= 150°C
= 125°C
10
J
T
J
T
=
25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - VFM ( )
V
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC10SD-S/L
50
45
40
35
30
25
20
14
12
10
8
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
F
I
I
I
= 8.0A
= 4.0A
F
F
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
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7
IRG4BC10SD-S/L
Same type
device as
D.U.T.
430µF
80%
90%
of Vce
D.U.T.
10%
V
ge
V
C
90%
t
d(off)
10%
5%
I
C
Fig. 18a - Test Circuit for Measurement of
tf
t
r
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t
d(on)
t=5µs
E
E
off
on
E
= (E +E )
on off
ts
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
V
E on = Vce Ic dt
t4
∫
Erec =
t1
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC10SD-S/L
Vg
GATE SIG NAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
600 0µF
100V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
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9
IRG4BC10SD-S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SO LDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
A
INTERNATIONAL
RECTIFIER
PART NUMBER
F530S
LOGO
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY
=
YEAR
= W EEK
LOT CODE
W W
10
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IRG4BC10SD-S/L
TO-262 Package Outline
TO-262 Part Marking Information
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11
IRG4BC10SD-S/L
D2Pak Tape & Reel Information
TR R
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
F E ED D IR E C TIO N
TR L
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
F E E D D IR E C T IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
MIN.
30.40 (1.197)
M AX.
NOTES
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED
:
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
OUTER EDGE.
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
ꢀThis only applies to TO-262 package.
This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
12
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