IRG4BC10SD-LPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管,超快软恢复二极管型号: | IRG4BC10SD-LPBF |
厂家: | Infineon |
描述: | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
文件: | 总12页 (文件大小:313K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95780
IRG4BC10SD-SPbF
IRG4BC10SD-LPbF
Standard Speed
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
CoPack IGBT
Features
C
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
VCES = 600V
VCE(on) typ. = 1.10V
• Very Tight Vce(on) distribution
G
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
@VGE = 15V, IC = 2.0A
E
• Industry standard D2Pak & TO-262 packages
n-channel
• Lead-Free
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
D2Pak
IRG4BC10SD-S
TO-262
IRG4BC10SD-L
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
14
IC @ TC = 100°C
8.0
ICM
18
A
ILM
18
IF @ TC = 100°C
4.0
IFM
18
± 20
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
38
W
°C
PD @ TC = 100°C Maximum Power Dissipation
15
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
–––
–––
–––
–––
Typ.
–––
Max.
3.3
Units
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
Junction-to-Case - Diode
–––
7.0
°C/W
Case-to-Sink, flat, greased surface
0.50
–––
80
Junction-to-Ambient, typical socket mount ꢀ
–––
Junction-to-Ambient (PCB Mount, steady state) –––
Weight –––
–––
40
2.0(0.07)
–––
g (oz)
www.irf.com
1
08/27/04
IRG4BC10SD-S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage 600
—
—
—
V
VGE = 0V, IC = 250µA
—
—
—
—
3.0
—
0.64
V/°C VGE = 0V, IC = 1.0mA
IC = 8.0A
VCE(on)
Collector-to-Emitter Saturation Voltage
1.58 1.8
VGE = 15V
2.05
1.68
—
—
—
V
IC = 14.0A
See Fig. 2, 5
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-9.5
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
Zero Gate Voltage Collector Current
3.65 5.48
—
S
VCE = 100V, IC =8.0A
VGE = 0V, VCE = 600V
ICES
—
—
—
—
—
—
—
250
1000
µA
V
GE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
1.5 1.8
1.4 1.7
V
IC =4.0A
See Fig. 13
IC =4.0A, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15 22
IC = 8.0A
Qge
Qgc
td(on)
tr
2.42 3.6
6.53 9.8
nC VCC = 400V
VGE = 15V
See Fig. 8
76
32
—
—
TJ = 25°C
ns
IC = 8.0A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
815 1200
720 1080
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.31
3.28
—
—
mJ See Fig. 9, 10, 18
3.60 10.9
1.46 2.6
mJ IC = 5.0A
70
36
—
—
—
—
—
—
—
—
—
42
57
TJ = 150°C, See Fig. 10,11, 18
IC = 8.0A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
890
890
3.83
7.5
280
30
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
4.0
28
ƒ = 1.0MHz
TJ = 25°C See Fig.
38
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF =4.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
2.9 5.2
3.7 6.7
VR = 200V
Qrr
40
60
70 105
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
280
235
—
—
Details of note through are on the last page
2
www.irf.com
IRG4BC10SD-S/LPbF
10.0
8.0
6.0
4.0
2.0
0.0
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 9.2W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
60%of rated
voltage
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
°
T = 25 C
J
°
°
T = 150 C
T = 150 C
J
J
10
°
T = 25 C
J
V
= 15V
V
= 50V
GE
CC
80µs PULSE WIDTH
5µsPULSEWIDTH
1
0.5
1.0
1.5
2.0
2.5
3.0
6
8
10 12
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
www.irf.com
3
IRG4BC10SD-S/LPbF
16
3.00
2.50
2.00
1.50
1.00
V
= 15V
GE
80 us PULSE WIDTH
I
= 16A
C
12
8
I
I
=
=
8A
4A
C
C
4
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
°
T , Junction Temperature ( C)
J
°
T , Case Temperature ( C)
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4BC10SD-S/LPbF
20
500
400
300
200
100
0
V
CC
I
C
= 400V
= 8A
V
= 0V,
f = 1MHz
C SHORTED
ce
GE
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
15
10
5
C
ies
C
C
oes
res
0
1
10
100
0
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
CE
G
Fig. 8 - Typical Gate Charge vs.
Fig. 7 - Typical Capacitance vs.
Gate-to-Emitter Voltage
Collector-to-Emitter Voltage
3.60
3.55
3.50
3.45
3.40
3.35
3.30
100
10
1
100Ω
V
V
= 480V
R
= O
= 15V
CC
GE
G
= 15V
V
V
GE
°
T
= 25
= 8A
C
= 480V
J
C
CC
I
I
=
A
16
C
I
I
=
=
A
A
8
4
C
C
0.1
0
20
40
60
80
100
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C )
RG , Gate Resistance (Ω)
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
www.irf.com
5
IRG4BC10SD-S/LPbF
100
10
1
15
V
T
= 20V
R
T
= 100
100 Ω
GE
J
G
J
= 125 oC
°
= 150 C
V = 480V
= 15V
GE
CC
V
12
9
6
3
SAFE OPERATING AREA
10
0
0
4
8
12
16
20
1
100
1000
I
, Collector Current (A)
V
, Collector-to-Emitter Voltage (V)
C
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector Current
100
T = 150°C
J
10
T = 125°C
J
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - VFM ( V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
www.irf.com
IRG4BC10SD-S/LPbF
50
45
40
35
30
25
20
14
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
12
I
F
I
I
= 8.0A
= 4.0A
F
F
10
8
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR= 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
www.irf.com
7
IRG4BC10SD-S/LPbF
Same type
device as
D.U.T.
430µF
80%
90%
of Vce
D.U.T.
10%
V
ge
V
C
90%
t
d(off)
10%
5%
I
C
Fig. 18a - Test Circuit for Measurement of
t
f
t
r
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t
d(on)
t=5µs
E
on
E
off
E =(E +E
ts on off
)
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Eon = Vce Ic dt
t4
∫
Erec =
t1
Vd Ic dt
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
www.irf.com
IRG4BC10SD-S/LPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
www.irf.com
9
IRG4BC10SD-S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DE S I GNAT E S L E AD- F R E E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WEE K 02
A = AS S E MB L Y S IT E CODE
10
www.irf.com
IRG4BC10SD-S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
AS SEMBLED ON WW 19, 1997
IN T HE ASS EMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
LOT CODE
LINE C
OR
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WE E K 19
A = ASSEMBLYSITE CODE
www.irf.com
11
IRG4BC10SD-S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
ꢀThis only applies to TO-262 package.
This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
12
www.irf.com
相关型号:
IRG4BC10SD-LTRL
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN
INFINEON
IRG4BC10SD-LTRR
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN
INFINEON
IRG4BC10SD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
INFINEON
IRG4BC10SD-STRL
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
INFINEON
IRG4BC10SD-STRLPBF
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRG4BC10SD-STRR
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
INFINEON
IRG4BC10SD-STRRPBF
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRG4BC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
INFINEON
IRG4BC10UDPBF
INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT
INFINEON
©2020 ICPDF网 联系我们和版权申明