IRG4PC40FDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG4PC40FDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总11页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94911
IRG4PC40FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
Fast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode)$
VCES = 600V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCE(on) typꢀ = 1ꢀ50V
@VGE = 15V, IC = 27A
G
IGBT co-packaged with HEXFREDTM ultrafast,
E
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
n-channel
Industry standard TO-247AC package
Lead-Free
Benefits
Generation -4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's $ Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
Maxꢀ
600
Units
V
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
I
49
IC @ TC = 100°C
27
ICM
200
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
200
IF @ TC = 100°C
15
IFM
200
VGE
± 20
160
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
W
PD @ TC = 100°C
65
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 secꢀ
Mounting Torque, 6-32 or M3 Screwꢀ
°C
300 (0ꢀ063 inꢀ (1ꢀ6mm) from case)
10 lbfin (1ꢀ1 Nm)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Minꢀ
------
------
------
-----
Typꢀ
------
------
0ꢀ24
Maxꢀ
0ꢀ77
1ꢀ7
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
------
40
-----
------
6 (0ꢀ21)
------
g (oz)
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1
12/29/03
IRG4PC40FDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ----
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeffꢀ of Breakdown Voltage ---- 0ꢀ70 ---- V/°C VGE = 0V, IC = 1ꢀ0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1ꢀ50 1ꢀ7
---- 1ꢀ85 ----
---- 1ꢀ56 ----
3ꢀ0 ---- 6ꢀ0
IC = 27A
VGE = 15V
V
IC = 49A
See Figꢀ 2, 5
IC = 27A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeffꢀ of Threshold Voltage ---- -12 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9ꢀ2
12
----
S
VCE = 100V, IC = 27A
ICES
Zero Gate Voltage Collector Current
----
---- 250
µA
VGE = 0V, VCE = 600V
---- ---- 3500
---- 1ꢀ3 1ꢀ7
---- 1ꢀ2 1ꢀ6
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 15A
See Figꢀ 13
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
---- ---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
---- 100 150
IC = 27A
Qge
Qgc
td(on)
tr
----
----
15
35
23
53
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Figꢀ 8
---- 63
---- 32
----
----
IC = 27A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
FallTime
---- 230 350
---- 170 250
---- 0ꢀ95 ----
---- 2ꢀ01 ----
---- 2ꢀ96 4ꢀ0
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recoveryꢀ
See Figꢀ 9, 10, 11, 18
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
mJ
ns
---- 63
---- 33
----
----
TJ = 150°C, See Figꢀ 9, 10, 11, 18
IC = 27A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
FallTime
---- 350 ----
---- 310 ----
---- 4ꢀ7 ----
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recoveryꢀ
Measured 5mm from package
VGE = 0V
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
----
13
----
Cies
Coes
Cres
trr
---- 2200 ----
---- 140 ----
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Figꢀ 7
---- 29
---- 42
----
60
= 1ꢀ0MHz
TJ = 25°C See Figꢀ
---- 74 120
Diode Peak Reverse Recovery Current ---- 4ꢀ0 6ꢀ0
---- 6ꢀ5 10
TJ = 125°C
TJ = 25°C See Figꢀ
TJ = 125°C 15
TJ = 25°C See Figꢀ
TJ = 125°C 16
14
IF = 15A
Irr
VR = 200V
Qrr
Diode Reverse Recovery Charge
---- 80 180
---- 220 600
nC
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
---- 188 ---- A/µs TJ = 25°C See Figꢀ
---- 160 ---- TJ = 125°C 17
2
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IRG4PC40FDPbF
40
30
20
10
0
Duty cycle: 50%
T
= 125°C
= 90°C
J
T
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 35W
60% of rated
voltage
A
0.1
1
10
100
f, Frequency (kHz)
Figꢀ 1 - Typical Load Current vsꢀ Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
10
TJ = 25°C
100
TJ = 150°C
TJ = 150°C
TJ = 25°C
10
VCC = 50V
5µs PULSE WIDTH
VGE = 15V
20µs PULSE WIDTH
A
A
1
1
5
6
7
8
9
10
11
12
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Figꢀ 3 - Typical Transfer Characteristics
Figꢀ 2 - Typical Output Characteristics
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3
IRG4PC40FDPbF
50
2.5
2.0
1.5
1.0
V
= 15V
GE
VGE = 15V
80µs PULSE WIDTH
IC = 54A
40
30
20
10
0
IC = 27A
IC = 14A
A
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
TC , Case Temperature (°C)
T , Junction Temperature (°C)
J
Figꢀ 4 - Maximum Collector Current vsꢀ Case
Figꢀ 5 - Typical Collector-to-Emitter Voltage
Temperature
vsꢀJunctionTemperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
Notes:
1. Duty factor D = t / t
2
thJC
1
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Figꢀ6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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4
IRG4PC40FDPbF
4000
3000
2000
1000
0
20
16
12
8
VGE = 0V
f = 1 MHz
VCE = 400V
IC = 27A
Cies = Cge + Cgc + Cce
Cres = Cce
SHORTED
Coes = Cce + Cgc
C
ies
C
oes
4
C
res
A
A
0
0
20
40
60
80
100
120
1
10
100
Q , Total Gate Charge (nC)
g
V
CE
, Collector-to-Emitter Voltage (V)
Figꢀ 7 - Typical Capacitance vsꢀ
Figꢀ 8 - Typical Gate Charge vsꢀ
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
100
10
1
3.3
3.2
3.1
3.0
RG = 10
VGE = 15V
VCC = 480V
VCC = 480V
VGE = 15V
TJ = 25°C
IC = 27A
Ω
IC = 54A
IC = 27A
IC = 14A
A
A
0.1
0
10
20
30
40
50
60
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
R , Gate Resistance (
)
Ω
G
Figꢀ 9 - Typical Switching Losses vsꢀ Gate
Figꢀ 10 - Typical Switching Losses vsꢀ
Resistance
Junction Temperature
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5
IRG4PC40FDPbF
1000
100
10
12
V
= 20V
= 125°C
RG = 10
TJ = 150°C
GE
Ω
T
J
VCC = 480V
10
VGE = 15V
8
SAFE OPERATING AREA
6
4
2
0
A
1
1
10
100
1000
0
10
20
30
40
50
60
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
CE
C
Figꢀ 12 - Turn-Off SOA
Figꢀ 11 - Typical Switching Losses vsꢀ
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Figꢀ 13 - Maximum Forward Voltage Drop vsꢀ Instantaneous Forward Current
6
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IRG4PC40FDPbF
100
10
1
100
80
60
40
20
VR = 200V
TJ = 125°C
TJ = 25°C
VR= 200V
TJ = 125°C
TJ = 25°C
I
= 30A
F
I
= 30A
F
I
= 15A
F
I
= 15A
F
I
= 5.0A
F
I
= 5.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Figꢀ 15 - Typical Recovery Current vsꢀ dif/dt
Figꢀ 14 - Typical Reverse Recovery vsꢀ dif/dt
800
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
I
= 15A
F
F
I
= 30A
F
I
= 5.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Figꢀ 16 - Typical Stored Charge vsꢀ dif/dt
Figꢀ 17 - Typical di(rec)M/dt vsꢀ dif/dt
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7
IRG4PC40FDPbF
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff = Vce ic dt
∫
t1
Figꢀ 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
I
t1
t2
Figꢀ 18b - Test Waveforms for Circuit of Fig$ 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Figꢀ 18d - Test Waveforms for Circuit of Fig$ 18a,
Figꢀ 18c - Test Waveforms for Circuit of Fig$ 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4PC40FDPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e$ Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20$ Pulsed Collector Current
Test Circuit
Figure 19$ Clamped Inductive Load Test Circuit
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9
IRG4PC40FDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 10Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0$1%ꢀ
Pulse width 5$0µs, single shot$
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
B
M
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
Hexfet
IGBT
1 -Gate1-Gate
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
2 - Drain2 - Collector
3 - Source 3 - Emitter
2.60 (.102)
2.20 (.087)
0.25 (.010)
A
C
M
S
5.45 (.215)
4 - Drain
4 - Collector
3.40 (.133)
3.00 (.118)
2X
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
035H
57
56
DATE CODE
YEAR 0 = 2000
WE EK 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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