IRG4PC40KDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG4PC40KDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总11页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -94912
IRG4PC40KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated
UltraFast IGBT
C
Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5ꢀ0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCES = 600V
VCE(on) typꢀ = 2ꢀ1V
@VGE = 15V, IC = 25A
G
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
E
n-channel
Industry standard TO-247AC package
Lead-Free
Benefits
Generation 4 IGBTs offer highest efficiencies
available
HEXFRED diodes optimized for performance with
IGBTsꢀ Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter
Maxꢀ
Units
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
600
V
I
42
IC @ TC = 100°C
25
ICM
8
4
A
ILM
84
IF @ TC = 100°C
15
IFM
84
10
tsc
µs
V
VGE
± 20
PD @ TC = 25°C
Maximum Power Dissipation
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 secꢀ
Mounting Torque, 6-32 or M3 Screwꢀ
°C
300 (0ꢀ063 inꢀ (1ꢀ6mm) from case)
10 lbfin (1ꢀ1 Nm)
Thermal Resistance
Parameter
Minꢀ
Typꢀ
Maxꢀ
0ꢀ77
1ꢀ7
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
0ꢀ24
40
6 (0ꢀ21)
g (oz)
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1
12/29/03
IRG4PC40KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temperature Coeffꢀ of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage 600
V
VGE = 0V, IC = 250µA
3ꢀ0
7ꢀ0
0ꢀ46
V/°C VGE = 0V, IC = 1ꢀ0mA
IC = 25A
VCE(on)
Collector-to-Emitter Saturation Voltage
2ꢀ10 2ꢀ6
VGE = 15V
2ꢀ70
2ꢀ14
V
IC = 42A
See Figꢀ 2, 5
IC = 25A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
6ꢀ0
∆VGE(th)/∆TJ Temperature Coeffꢀ of Threshold Voltage
-13
14
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
S
VCE = 100V, IC = 25A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
3500
µA
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A See Figꢀ 13
C = 15A, TJ = 150°C
VGE = ±20V
VFM
IGES
Diode Forward Voltage Drop
1ꢀ3 1ꢀ7
1ꢀ2 1ꢀ6
V
I
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
10
120 180
IC = 25A
Qge
Qgc
td(on)
tr
16
51
53
33
24
77
nC
ns
VCC = 400V
VGE = 15V
See Figꢀ8
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
110 160
100 150
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
mJ See Figꢀ 9,10,14
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0ꢀ95
0ꢀ76
1ꢀ71 2ꢀ3
µs
VCC = 360V, TJ = 125°C
GE = 15V, RG = 10Ω , VCPK < 500V
V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
52
37
60
TJ = 150°C,
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
ns
Turn-Off Delay Time
Fall Time
220
140
2ꢀ67
13
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ See Figꢀ 11,14
nH
pF
ns
A
Measured 5mm from package
Cies
Coes
Cres
trr
1600
130
55
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
= 1ꢀ0MHz
See Figꢀ 7
42
TJ = 25°C See Figꢀ
TJ = 125°C 14
TJ = 25°C See Figꢀ
74 120
4ꢀ0 6ꢀ0
IF = 15A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
6ꢀ5
10
TJ = 125°C
TJ = 25°C
TJ = 125°C
15
See Figꢀ
16
VR = 200V
Qrr
80 180
220 600
nC
di/dt = 200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
188
160
A/µs TJ = 25°C
TJ = 125°C
See Figꢀ
17
2
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IRG4PC40KDPbF
30
25
20
15
10
5
For both:
Duty cycle: 50%
T
= 125°C
= 90°C
J
T
sink
Gate drive as specified
35
Power Dissipation =
W
Square wave:
60% of rated
voltage
I
Ideal diodes
0
0.1
1
10
100
f, Frequency (KHz)
Figꢀ 1 - Typical Load Current vsꢀ Frequency
(Load Current = IRMS of fundamental)
100
100
TJ
= 150°C
T = 150oC
J
TJ = 25°C
10
10
T = 25oC
J
V
= 15V
GE
20µs PULSE WIDTH
V CC = 50V
5µs PULSE WIDTH
A
1
0.1
1
1
10
5
7
9
11
V
, Collector-to-Emitter Voltage (V)
CE
V
, Gate-to-Emitter Voltage (V)
GE
Figꢀ 3 - Typical Transfer Characteristics
Figꢀ 2 - Typical Output Characteristics
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3
IRG4PC40KDPbF
50
5.0
4.0
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 50 A
C
40
30
20
10
0
I
I
= 25 A
=12.5 A
C
C
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
°
T , Junction Temperature ( C)
C
J
Figꢀ 4 - Maximum Collector Current vsꢀ Case
Figꢀ 5 - Typical Collector-to-Emitter Voltage
Temperature
vsꢀ Junction Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Figꢀ 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC40KDPbF
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
GE
V
CC
I
C
= 400V
= 25A
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
4
C
C
oes
res
0
0
1
10
100
0
20
40
60
80
100
120
140
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
CE
G
Figꢀ 7 - Typical Capacitance vsꢀ
Figꢀ 8 - Typical Gate Charge vsꢀ
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
3.00
100
10Ω
= 15V
= 480V
V
V
= 480V
= 15V
= 25 C
R
=
G
CC
GE
V
GE
°
T
V
J
C
CC
I
= 25A
10
2.50
2.00
1.50
I
I
I
=
=
=
A
A
A
50
25
C
C
C
12.5
1
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
50
R , Gate Resistance ( Ω )
T , Junction Temperature ( C )
J
R
, Gate Resistance (
G
Figꢀ 9 - Typical Switching Losses vsꢀ Gate
Figꢀ 10 - Typical Switching Losses vsꢀ
Resistance
Junction Temperature
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5
IRG4PC40KDPbF
8.0
1000
100
10
R
T
=
V
T
= 20V
= 1
125°C
10Ω
G
J
GE
J
°
= 150 C
V
= 480V
= 15V
CC
V
GE
6.0
4.0
2.0
0.0
SAFE OPERATING AREA
10
1
1
100
1000
0
10
20
30
40
50
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Figꢀ 12 - Turn-Off SOA
Figꢀ 11 - Typical Switching Losses vsꢀ
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Figꢀ 13 - Maximum Forward Voltage Drop vsꢀ Instantaneous Forward Current
6
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IRG4PC40KDPbF
100
10
1
100
80
60
40
20
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 30A
F
I
= 30A
F
I
= 15A
F
I
= 15A
F
I
= 5.0A
F
I
= 5.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Figꢀ 15 - Typical Recovery Current vsꢀ dif/dt
Figꢀ 14 - Typical Reverse Recovery vsꢀ dif/dt
800
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
F
I
= 15A
F
I
= 30A
F
I
= 5.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Figꢀ 16 - Typical Stored Charge vsꢀ dif/dt
Figꢀ 17 - Typical di(rec)M/dt vsꢀ dif/dt
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7
IRG4PC40KDPbF
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
90% Ic
of Vce
D.U.T.
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
Eoff =
Vce Ic dt
Figꢀ 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1
I
t1
t2
Figꢀ 18b - Test Waveforms for Circuit of Figꢀ 18a, Defining
Eoff, td(off), tf
trr
trr
GATE VOLTAGE D.U.T.
+Vg
Qrr =
Ic dt
Ic
∫
tx
10% +Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
td(on)
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
t2
Eon = Vce Ic dt
t4
∫
Erec =
t1
Vd Ic dt
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Figꢀ 18d - Test Waveforms for Circuit of Figꢀ 18a,
Figꢀ 18c - Test Waveforms for Circuit of Figꢀ 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4PC40KDPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18eꢀ Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20ꢀ Pulsed Collector Current
Test Circuit
Figure 19ꢀ Clamped Inductive Load Test Circuit
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9
IRG4PC40KDPbF
Notes:
Repetitiverating:VGE=20V;pulsewidthlimitedbymaximumjunctiontemperature
(figure20)
VCC=80%(VCES),VGE=20V,L=10µH,RG=10Ω(figure19)
Pulsewidth≤80µs;dutyfactor≤0.1%.
Pulsewidth5.0µs,singleshot.
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
B
M
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
Hexfet
IGBT
1 -Gate1-Gate
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
2 - Drain2 - Collector
3 - Source 3 - Emitter
2.60 (.102)
2.20 (.087)
0.25 (.010)
A
C
M
S
5.45 (.215)
4 - Drain
4 - Collector
3.40 (.133)
3.00 (.118)
2X
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
035H
57
56
DATE CODE
YEAR 0 = 2000
WE EK 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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