IRG4PC40KD-E [INFINEON]
Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IRG4PC40KD-E |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 超快软恢复二极管 快速软恢复二极管 局域网 电动机控制 栅 晶体管 |
| 文件： | 总10页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -91584A
IRG4PC40KD
Short Circuit Rated
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast IGBT
C
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
VCES = 600V
V
CE(on) typ. = 2.1V
G
parameter distribution and higher efficiency than
Generation 3
@VGE = 15V, IC = 25A
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
E
n-channel
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
600
V
I
42
IC @ TC = 100°C
25
ICM
84
A
ILM
84
IF @ TC = 100°C
15
IFM
84
10
tsc
µs
V
VGE
± 20
PD @ TC = 25°C
Maximum Power Dissipation
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
0.77
1.7
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
–––
°C/W
0.24
–––
40
–––
6 (0.21)
–––
g (oz)
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1
4/15/2000
IRG4PC40KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage 600
—
—
—
V
VGE = 0V, IC = 250µA
—
—
—
—
3.0
—
7.0
—
—
—
—
—
0.46
V/°C VGE = 0V, IC = 1.0mA
IC = 25A
VCE(on)
Collector-to-Emitter Saturation Voltage
2.10 2.6
VGE = 15V
2.70
2.14
—
—
—
V
IC = 42A
See Fig. 2, 5
IC = 25A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-13
14
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
—
S
VCE = 100V, IC = 25A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
250
3500
µA
—
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A See Fig. 13
C = 15A, TJ = 150°C
VGE = ±20V
VFM
IGES
Diode Forward Voltage Drop
1.3 1.7
1.2 1.6
V
I
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
120 180
IC = 25A
Qge
Qgc
td(on)
tr
16
51
53
33
24
77
—
—
nC
ns
VCC = 400V
VGE = 15V
See Fig.8
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
110 160
100 150
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.95
0.76
—
—
Energy losses include "tail"
mJ See Fig. 9,10,14
1.71 2.3
—
—
µs
VCC = 360V, TJ = 125°C
GE = 15V, RG = 10Ω , VCPK < 500V
V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
52
37
—
—
—
—
—
—
—
—
—
60
TJ = 150°C,
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
ns
Turn-Off Delay Time
Fall Time
220
140
2.67
13
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ See Fig. 11,14
nH
pF
ns
A
Measured 5mm from package
Cies
Coes
Cres
trr
1600
130
55
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
42
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
74 120
4.0 6.0
IF = 15A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
6.5
10
VR = 200V
Qrr
80 180
220 600
nC
di/dt = 200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
188
160
—
—
2
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IRG4PC40KD
30
25
20
15
10
5
For both:
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
G ate drive as specified
35
Power Dissipation =
W
Squa re wave:
60% of rated
voltage
I
Ideal diodes
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 150°C
T = 150oC
J
TJ = 25°C
10
10
T = 25oC
J
V
= 15V
V
= 50V
GE
C C
20µs PULSE WIDTH
5µs PULSE WIDTH
A
1
0.1
1
1
10
5
7
9
11
V
, Collector-to-Emitter Voltage (V)
CE
V
, Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4PC40KD
50
5.0
4.0
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 50 A
C
40
30
20
10
0
I
I
= 25 A
=12.5 A
C
C
25
50
T
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Case Temperature ( C)
°
, Junction Temperature ( C)
T
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC40KD
3000
2500
2000
1500
1000
500
20
16
12
8
V
C
= 0V,
f = 1MHz
C SHORTED
ce
GE
V
CC
I
C
= 400V
= 25A
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
4
C
C
oes
res
0
0
1
10
100
0
20
Q
40
60
80
100
120
140
V
, Collector-to-Emitter Voltage (V)
, Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
3.00
2.50
2.00
1.50
100
10Ω
= 15V
= 480V
V
V
= 480V
R
=
CC
GE
G
= 15V
V
GE
°
T
= 25
C
V
CC
J
C
I
= 25A
10
I
I
I
=
=
=
A
A
A
50
25
C
C
C
12.5
1
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
50
R , Gate Resistance ( Ω )
, Gate Resstance
T , Junction Temperature ( C )
J
R
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4PC40KD
8.0
1000
100
10
R
T
=
V
T
= 20V
= 1
125°C
10Ω
G
J
GE
J
= 150 °C
= 480V
= 15V
V
CC
V
GE
6.0
4.0
2.0
0.0
SAFE OPERATING AREA
10
1
1
100
1000
0
10
20
30
40
50
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T
T
T
= 150°C
= 125°C
J
J
J
=
25°C
0.8
1.2
1.6
2.0
2.4
Forward Volta ge D ro p - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4PC40KD
100
10
1
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
I
= 30A
F
I
= 30A
F
I
= 15A
F
60
I
= 15A
F
I
= 5.0A
F
40
I
= 5.0A
F
20
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
800
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
F
I
= 15A
F
I
= 30A
F
I
= 5.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4PC40KD
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
90% Ic
D.U.T.
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
Eoff =
Vce Ic dt
Fig. 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1
I
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
E on = Vce Ic dt
t4
∫
Erec =
t1
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4PC40KD
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
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9
IRG4PC40KD
Notes:
Repetitiverating:VGE=20V;pulsewidthlimitedbymaximumjunctiontemperature
(figure20)
VCC=80%(VCES),VGE=20V,L=10µH,RG=10Ω(figure19)
Pulsewidth≤80µs;dutyfactor≤0.1%.
Pulsewidth5.0µs,singleshot.
Case Outline — TO-247AC
NOTE S:
-
D -
3.65 (.143)
3.55 (.140)
0.25 (.01 0)
1
DIME NSIONS & T OLE RANC IN G
5.30 (.20 9)
4.70 (.18 5)
15.90 (.626)
15.30 (.602)
PER A NSI Y14.5M , 1982.
CON TROLLIN G DIM EN SION
DIM E NSIONS A RE SHO W N
MILLIMET ERS (INCH ES).
M
M
D
B
2
3
: INCH.
2.5 0 (.089)
-
B -
-
A -
1.5 0 (.059)
4
5.50 (.2 17)
4
CON FORM S TO JEDEC O UTLINE
TO-247AC.
20.30 (.800)
19.70 (.775)
5.5 0 (.217)
4.5 0 (.177)
2X
LEAD ASS IG NME NTS
1
2
3
4
-
-
-
-
GAT E
COLLECTO R
EM ITT ER
COLLECTO R
1
2
3
-
C -
14.80 (.58 3)
14.20 (.55 9)
4.30 (.170)
3.70 (.145)
*
LO NGE R LEA DED (20m m )
VER SIO N AVAILABLE (TO-247AD)
TO OR DER AD D "-E" S UFFIX
TO PAR T NUM BER
*
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3 X
3X
M
S
A
2.60 (.102)
2.20 (.087)
0.2 5 (.010)
C
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D imen sion s in M illimeters a nd (Inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
10
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