IRG7PH30K10DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG7PH30K10DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97403
IRG7PH30K10DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• 10 µS short circuit SOA
• SquareRBSOA
VCES = 1200V
IC = 16A, TC = 100°C
• 100% of the parts tested for ILM
G
tSC ≥ 10µs, TJ(max) = 150°C
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tightparameterdistribution
E
VCE(on) typ. = 2.05V
n-channel
• LeadFreePackage
C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• RuggedtransientPerformanceforincreasedreliability
• ExcellentCurrentsharinginparalleloperation
E
C
G
TO-247AC
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
1200
V
VCES
Continuous Collector Current
Continuous Collector Current
Nominal Current
30
IC @ TC = 25°C
16
IC @ TC = 100°C
9.0
INOMINAL
Pulse Collector Current, Vge = 15V
Clamped Inductive Load Current, Vge = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
27
A
ICM
36
ILM
30
16
IF @ TC = 25°C
IF @ TC = 100°C
36
IFM
±30
V
VGE
180
W
PD @ TC = 25°C
71
PD @ TC = 100°C
-55 to +150
TJ
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
TSTG
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
1.44
–––
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Rθ (Diode)
JC
Thermal Resistance Junction-to-Case-(each Diode)
°C/W
Rθ
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
CS
Rθ
JA
–––
1
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08/14/09
IRG7PH30K10DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
CT6
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
1200
—
1.11
2.05
2.56
—
—
V
∆V(BR)CES/∆TJ
VCE(on)
V
GE = 0V, IC = 1mA (25°C-150°C)
CT6
—
—
V/°C
IC = 9.0A, VGE = 15V, TJ = 25°C
IC = 9.0A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 400µA
5,6,7
—
2.35
—
—
V
V
9,10,11
9,10
VGE(th)
∆VGE(th)/∆TJ
gfe
Gate Threshold Voltage
5.0
—
7.5
—
V
CE = VGE, IC = 400µA (25°C - 150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
-15
6.2
1.0
400
2.0
2.1
—
mV/°C
S
11,12
VCE = 50V, IC = 9.0A, PW = 80µs
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IF = 9.0A
—
—
ICES
Collector-to-Emitter Leakage Current
—
25
µA
—
—
VFM
IGES
Diode Forward Voltage Drop
—
3.0
—
V
8
IF = 9.0A, TJ = 150°C
VGE = ±30V
—
Gate-to-Emitter Leakage Current
—
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
24
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 9.0A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
45
8.7
20
68
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
V
V
GE = 15V
CT1
13
nC
µJ
ns
CC = 600V
30
IC = 9.0A, VCC = 600V, VGE = 15V
CT4
CT4
530
380
910
14
760
600
1360
31
Ω
RG = 22 , L = 1.0mH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 9.0A, VCC = 600V, VGE = 15V
R
G = 22Ω, L = 1.0mH, LS = 150nH, TJ = 25°C
24
41
td(off)
tf
Turn-Off delay time
Fall time
110
38
130
56
Eon
Eoff
Etotal
td(on)
tr
IC = 9.0A, VCC = 600V, VGE=15V
13,15
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
810
680
1490
11
—
RG=22Ω, L=1.0mH, LS=150nH, TJ = 150°C
Energy losses include tail & diode reverse recovery
IC = 9.0A, VCC = 600V, VGE = 15V
—
µJ
ns
pF
WF1, WF2
14,16
CT4
—
—
Ω
G = 22 , L = 1.0mH, LS = 150nH
R
23
—
td(off)
tf
TJ = 150°C
WF1
Turn-Off delay time
Fall time
130
260
1070
63
—
WF2
—
Cies
Coes
Cres
VGE = 0V
23
Input Capacitance
—
V
CC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
26
—
f = 1.0Mhz
TJ = 150°C, IC = 36A
4
V
CC = 960V, Vp =1200V
CT2
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
Ω
Rg = 22 , VGE = +20V to 0V
TJ = 150°C, VCC = 600V, Vp =1200V
Rg = 22Ω, VGE = +15V to 0V
TJ = 150°C
22, CT3
WF4
10
—
—
µs
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
710
140
12
—
—
—
µJ
ns
A
17,18,19
20,21
V
CC = 600V, IF = 9.0A
Ω
Irr
VGE = 15V, Rg = 20 , L =1.0mH, Ls = 150nH
WF3
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 36µH, RG = 33Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R is measured at TJ of approximately 90°C.
θ
2
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IRG7PH30K10DPbF
30
25
20
15
10
5
200
150
100
50
0
0
25
50
75
100
(°C)
125
150
0
20 40 60 80 100 120 140 160
T
C
T
(°C)
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
CaseTemperature
Temperature
100
100
10µsec
100µsec
10
1msec
10
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
1
10
100
(V)
1000
10000
10
100
1000
10000
V
V
(V)
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
50
40
30
20
10
0
50
40
30
20
10
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRG7PH30K10DPbF
50
50
40
30
20
10
0
V
= 18V
40
30
20
10
0
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
-40°C
25°C
150°C
0
2
4
6
8
10
0.0
1.0
2.0
3.0
(V)
4.0
5.0
V
(V)
V
CE
F
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 80µs
tp = 80µs
12
10
8
12
10
8
I
I
I
= 4.5A
= 9.0A
= 18A
I
I
I
= 4.5A
= 9.0A
= 18A
CE
CE
CE
CE
CE
CE
6
4
2
0
6
4
2
0
5
10
15
20
5
10
15
20
V
(V)
GE
V
(V)
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
40
30
20
10
0
12
10
8
I
I
I
= 4.5A
CE
CE
CE
= 9.0A
= 18A
6
T = 25°C
J
T
= 150°C
J
4
2
0
4
6
8
10
12
14
16
5
10
15
20
V
, Gate-to-Emitter Voltage (V)
GE
V
(V)
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V
TJ = 150°C
4
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IRG7PH30K10DPbF
1000
100
10
2000
1600
1200
800
400
0
t
F
td
E
OFF
ON
t
R
E
td
OFF
ON
1
0
5
10
(A)
15
20
5
10
15
20
I
I
(A)
C
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22Ω; VGE = 15V
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22Ω; VGE = 15V
1600
1000
t
F
1400
E
ON
1200
1000
800
100
td
OFF
t
R
10
td
ON
E
OFF
600
400
1
0
20
40
60
(Ω)
80
100
0
20
40
60
(Ω)
80
100
R
R
G
G
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 9.0A; VGE = 15V
TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 9.0A; VGE = 15V
18
18
R
5.0Ω
10Ω
G =
16
14
12
10
8
16
14
12
10
8
R
G =
R
20Ω
G =
R
47Ω
G =
6
4
6
8
10 12 14 16 18 20
(A)
0
10
20
30
(Ω)
40
50
I
R
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C
TJ = 150°C
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5
IRG7PH30K10DPbF
18
3000
2500
2000
1500
1000
16
14
12
10
8
5.0Ω
18A
10Ω
20Ω
47Ω
9.0A
4.5A
0
100
200
di /dt (A/µs)
300
400
0
100
200
300
400
di /dt (A/µs)
F
F
Fig. 19 - Typ. Diode IRR vs. diF/dt
CC = 600V; VGE = 15V; IF = 9.0A; TJ = 150°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
V
V
CC = 600V; VGE = 15V; TJ = 150°C
60
1200
1000
800
48
40
32
24
16
8
= 5.0
R
R
Ω
G
50
40
30
20
10
= 10
= 20
= 47
Ω
G
T
sc
R
Ω
Ω
G
R
G
I
sc
600
400
0
5
10
(A)
15
20
8
10
12
(V)
14
16
I
V
F
GE
Fig. 22 - VGE vs. Short Circuit Time
Fig. 21 - Typ. Diode ERR vs. IF
VCC = 600V; TC = 150°C
TJ = 150°C
16
14
12
10
8
10000
1000
100
10
V
V
= 600V
= 400V
CES
CES
Cies
6
Coes
Cres
4
2
0
1
0
10
Q
20
30
40
50
0
100
200
V
300
(V)
400
500
, Total Gate Charge (nC)
G
CE
Fig. 24 - Typical Gate Charge vs. VGE
Fig. 23 - Typ. Capacitance vs. VCE
ICE = 9.0A; L = 600µH
VGE= 0V; f = 1MHz
6
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IRG7PH30K10DPbF
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
Ri (°C/W) τi (sec)
R4
0.0107
0.1816
0.3180
0.1910
0.000005
0.000099
0.001305
0.009113
τ
τ
J τJ
τ
Cτ
0.02
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
0.1
Ri (°C/W) τi (sec)
0.0103
0.4761
0.5749
0.3390
0.000005
0.000451
0.001910
0.012847
τ
τ
J τJ
τ
Cτ
0.02
0.01
τ
1τ1
τ
τ
2 τ2
3τ3
4τ4
0.01
0.001
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1 1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRG7PH30K10DPbF
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
Rg
DC
DUT
VCC
DUT /
DRIVER
VCC
SCSOA
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
Rg
0.0075µF
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.5 - Resistive Load Circuit
8
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IRG7PH30K10DPbF
900
800
700
600
500
400
300
200
100
0
45
40
900
800
700
600
500
400
300
200
100
0
18
16
14
12
10
8
tf
35
tr
30
25
90% ICE
TEST CURRENT
90% test
current
20
15
10
5
6
5% ICE
5% VCE
10% test
current
4
5% VCE
2
0
0
Eon Loss
Eoff Loss
-100
-5
-100
-2
-1.8 -0.8 0.2
1.2
2.2
3.2
-5
0
5
10
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
800
80
100
0
12.5
10
700
70
VCE
QRR
t
-100
-200
-300
-400
-500
-600
-700
-800
-900
7.5
5
600
60
500
400
300
200
100
0
ICE
50
40
30
20
10
0
2.5
0
-2.5
-5
Peak
IRR
-7.5
-10
-12.5
10%
Peak
IRR
-100
-10
-2.50
0.00
2.50
5.00
-5
0
5
10
Time (uS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
@ TJ = 150°C using Fig. CT.4
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9
IRG7PH30K10DPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2009
10
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