IRG7PH42U-EP [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG7PH42U-EP |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总10页 (文件大小：399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96233A
IRG7PH42UPbF
IRG7PH42U-EP
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology
C
VCES = 1200V
IC = 60A, TC = 100°C
TJ(max) =175°C
• Low switching losses
• Maximum junction temperature 175 °C
• SquareRBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tightparameterdistribution
• Lead-Free
G
E
V
CE(on) typ. = 1.7V
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
C
C
• Ruggedtransientperformanceforincreasedreliability
• Excellent current sharing in parallel operation
E
E
C
C
G
G
TO-247AD
IRG7PH42U-EP
TO-247AC
IRG7PH42UPbF
Applications
• U.P.S
• Welding
• Solarinverter
• Inductionheating
G
Gate
C
E
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
90
V
IC @ TC = 25°C
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
IC @ TC = 100°C
60
INOMINAL
A
30
ICM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
90
ILM
120
VGE
V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
±30
385
PD @ TC = 25°C
W
PD @ TC = 100°C
192
TJ
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.39
–––
Units
Rθ (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
JC
°C/W
Rθ
CS
Rθ
–––
JA
1
www.irf.com
02/18/10
IRG7PH42UPbF/IRG7PH42U-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
VGE = 0V, IC = 100µA
Collector-to-Emitter Breakdown Voltage
1200
—
1.2
1.7
2.1
2.2
—
—
V
∆V(BR)CES/∆TJ
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 30A, VGE = 15V, TJ = 25°C
IC = 30A, VGE = 15V, TJ = 150°C
IC = 30A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1mA
Temperature Coeff. of Breakdown Voltage
—
—
V/°C
—
2.0
—
VCE(on)
Collector-to-Emitter Saturation Voltage
—
V
—
—
VGE(th)
∆VGE(th)/∆TJ
gfe
Gate Threshold Voltage
3.0
—
6.0
—
V
mV/°C
S
VCE = VGE, IC = 1mA (25°C - 175°C)
Threshold Voltage temp. coefficient
Forward Transconductance
-16
32
VCE = 50V, IC = 30A, PW = 80µs
VGE = 0V, VCE = 1200V
—
—
ICES
Collector-to-Emitter Leakage Current
—
1
150
—
µA
nA
VGE = 0V, VCE = 1200V, TJ = 175°C
VGE = ±20V
—
700
—
IGES
Gate-to-Emitter Leakage Current
—
±100
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
IC = 30A
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
157
236
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
21
32
nC
µJ
ns
VCC = 600V
69
104
IC = 30A, VCC = 600V, VGE = 15V
RG = 10Ω, L = 200µH,TJ = 25°C
2105 2374
1182 1424
3287 3798
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH42UDPbF
25
32
34
41
271
86
—
—
—
—
—
—
—
—
—
—
td(off)
tf
Turn-Off delay time
Fall time
229
63
Eon
Eoff
Etotal
td(on)
tr
IC = 30A, VCC = 600V, VGE=15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
3186
2153
5339
20
RG=10Ω, L=200µH, TJ = 175°C
µJ
ns
pF
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH42UDPbF
31
td(off)
tf
Turn-Off delay time
Fall time
310
162
3338
124
75
Cies
Coes
Cres
VGE = 0V
VCC = 30V
f = 1.0Mhz
IC = 120A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCC = 960V, Vp =1200V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Ω
Rg = 10 , VGE = +20V to 0V, TJ =175°C
Notes:
VCC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10Ω
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
ꢀ Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 78A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
2
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IRG7PH42UPbF/IRG7PH42U-EP
60
50
40
30
20
10
0
For both:
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 95W
Square wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
80
60
40
20
0
400
350
300
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160 180
(°C)
25
50
75
100
(°C)
125
150
175
T
C
T
C
Fig. 2 - Maximum DC Collector Current vs.
Fig. 3 - Power Dissipation vs. Case
CaseTemperature
Temperature
1000
1000
100
10µsec
100
10
1
100µsec
10
1msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE =20V
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3
IRG7PH42UPbF/IRG7PH42U-EP
120
120
100
80
60
40
20
0
V
= 18V
100
80
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
20
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp =20µs
TJ = 25°C; tp = 20µs
12
10
8
120
100
80
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
60
6
4
2
0
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
40
20
0
0
2
4
6
8
10
4
8
12
16
20
V
(V)
CE
V
(V)
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 8 - Typ. IGBT Output Characteristics
TJ = -40°C
TJ = 175°C; tp = 20µs
12
10
8
12
10
8
I
I
I
= 15A
= 30A
= 60A
I
I
I
= 15A
CE
CE
CE
CE
CE
CE
= 30A
= 60A
6
4
2
0
6
4
2
0
4
8
12
16
20
4
8
12
16
20
V
(V)
GE
V
(V)
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
TJ = 175°C
4
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IRG7PH42UPbF/IRG7PH42U-EP
120
100
80
60
40
20
0
7000
6000
5000
4000
T
= 25°C
J
T
= 175°C
J
E
ON
3000
E
OFF
2000
1000
0
0
10
20
30
(A)
40
50
60
4
6
8
10
12
V
, Gate-to-Emitter Voltage (V)
GE
I
C
Fig. 12- Typ. Transfer Characteristics
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
VCE = 50V; tp = 20µs
1000
6000
5500
5000
4500
td
t
OFF
100
10
1
E
F
ON
4000
E
OFF
3500
3000
2500
2000
1500
1000
t
R
td
ON
0
25
50
75
100
0
10
20
30
(A)
40
50
60
Ω
)
Rg (
I
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
10000
1000
td
OFF
t
F
100
t
R
td
ON
10
0
20
40
60
(Ω)
80
100
R
G
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
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5
IRG7PH42UPbF/IRG7PH42U-EP
10000
16
14
12
10
8
Cies
V
V
= 600V
= 400V
CES
CES
1000
6
100
Coes
4
2
Cres
10
0
0
100
200
300
(V)
400
500
600
0
25
50
75 100 125 150 175
V
CE
Q
, Total Gate Charge (nC)
G
Fig. 18- Typical Gate Charge vs. VGE
ICE = 30A; L = 600µH
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1306
0.1752
0.0814
0.0031
0.000313
0.002056
0.008349
0.0431
0.01
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
6
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IRG7PH42UPbF/IRG7PH42U-EP
L
L
80 V
+
-
DUT
VCC
DUT
Vclamped
Rg
0
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
R = VCC
ICM
L
DIODE CLAMP
DUT
VCC
DUT /
DRIVER
VCC
Rg
Rg
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
C fo rce
100K
D1
22K
C sen se
E sense
0.0075µ
G force
DUT
E force
Fig.C.T.5 - BVCES Filter Circuit
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7
IRG7PH42UPbF/IRG7PH42U-EP
900
800
700
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
tf
tr
TEST CURRENT
90% ICE
90% test
current
5% VCE
5% ICE
10% test
current
5% VCE
Eoff Los s
-100
-10
Eon Loss
-100
-10
-0.5
0
0.5
1
1.5
2
9.3
9.5
9.7
9.9
10.1 10.3
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
8
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IRG7PH42UPbF/IRG7PH42U-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRG7PH42UPbF/IRG7PH42U-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2010
10
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