IRG7PSH50UDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG7PSH50UDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97548
IRG7PSH50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) trench IGBT technology
• Low switching losses
• SquareRBSOA
VCES = 1200V
I NOMINAL = 50A
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
• Tightparameterdistribution
• Lead-Free
G
TJ(max) = 150°C
E
VCE(on) typ. = 1.7V
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
C
• Ruggedtransientperformanceforincreasedreliability
• Excellent current sharing in parallel operation
E
C
G
Applications
• U.P.S.
Super-247
• Welding
• SolarInverter
• InductionHeating
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
1200
116
Units
Collector-to-Emitter Voltage
V
VCES
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
IC @ TC = 25°C
70
IC @ TC = 100°C
50
INOMINAL
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
ICM
150
A
ILM
200
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
116
IF @ TC = 25°C
70
IF @ TC = 100°C
200
IFM
±30
V
VGE
462
W
PD @ TC = 25°C
Maximum Power Dissipation
185
PD @ TC = 100°C
Operating Junction and
-55 to +150
TJ
Storage Temperature Range
°C
TSTG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.27
0.37
–––
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Rθ (IGBT)
JC
Thermal Resistance Junction-to-Case-(each Diode)
Rθ (Diode)
JC
°C/W
Rθ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
Rθ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
1
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07/28/2010
IRG7PSH50UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
VGE = 0V, IC = 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
1200
—
1.0
1.7
2.0
—
—
V
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, IC = 1.0mA (25°C-150°C)
IC = 50A, VGE = 15V, TJ = 25°C
IC = 50A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 2.0mA
—
—
V/°C
—
2.0
—
—
V
V
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
∆VGE(th)/∆TJ
VCE = VGE, IC = 1.0mA (25°C - 150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
-17
55
mV/°C
S
V
CE = 50V, IC = 50A, PW = 30µs
VGE = 0V, VCE = 1200V
GE = 0V, VCE = 1200V, TJ = 150°C
gfe
—
—
ICES
Collector-to-Emitter Leakage Current
—
2.0
3700
3.0
2.7
—
100
—
µA
V
—
VFM
IGES
IF = 50A
Diode Forward Voltage Drop
—
3.9
—
V
IF = 50A, TJ = 150°C
VGE = ±30V
—
Gate-to-Emitter Leakage Current
—
±200
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 50A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
290
440
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
VCC = 600V
40
60
nC
µJ
ns
110
170
IC = 50A, VCC = 600V, VGE = 15V
3600 4600
2200 3200
5800 7800
Ω
RG = 5.0 , L = 200µH,TJ = 25°C
Energy losses include tail & diode reverse recovery
35
40
55
60
500
65
—
—
—
—
—
—
—
—
—
—
td(off)
tf
Turn-Off delay time
Fall time
430
45
Eon
Eoff
Etotal
td(on)
tr
IC = 50A, VCC = 600V, VGE=15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
5080
3370
8450
30
Ω
RG=5.0 , L=200µH, TJ = 150°C
µJ
ns
pF
Energy losses include tail & diode reverse recovery
40
td(off)
tf
Turn-Off delay time
Fall time
480
170
6000
300
130
Cies
Coes
Cres
VGE = 0V
Input Capacitance
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
f = 1.0Mhz
TJ = 150°C, IC = 200A
VCC = 960V, Vp =1200V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Ω
Rg = 5.0 , VGE = +20V to 0V
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
1510
190
—
—
—
µJ
ns
A
VCC = 600V, IF = 5.0A
Ω
Rg = 5.0 , L =1.0mH
Irr
Peak Reverse Recovery Current
5760
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 5.0Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2
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IRG7PSH50UDPbF
120
100
80
60
40
20
0
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Vcc = 600V
Gate drive as specified
Power Dissipation = 183W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
120
100
80
60
40
20
0
500
400
300
200
100
0
25
50
75
100
125
150
25
50
75
100
(°C)
125
150
T
T
(°C)
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
CaseTemperature
Temperature
1000
1000
100
10µsec
100
10
1
10
100µsec
1msec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
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3
IRG7PSH50UDPbF
200
200
150
100
50
150
100
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
GE
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
GE
GE
GE
GE
50
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
TJ = 25°C; tp = 30µs
200
150
100
200
150
100
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
50
50
0
-40°C
25°C
150°C
0
0.0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
0
2
4
6
8
10
V
V
(V)
F
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 30µs
tp = 30µs
12
10
12
10
8
I
I
I
= 25A
= 50A
= 100A
8
6
4
2
0
CE
CE
CE
I
I
I
= 25A
= 50A
= 100A
CE
CE
CE
6
4
2
0
0
5
10
15
20
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
4
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IRG7PSH50UDPbF
12
10
8
200
150
100
50
I
I
I
= 25A
= 50A
= 100A
CE
CE
CE
6
T = 25°C
J
T
= 150°C
J
4
2
0
0
0
2
4
6
8
10
0
5
10
15
20
V
, Gate-to-Emitter Voltage (V)
GE
V
(V)
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 30µs
TJ = 150°C
12000
10000
8000
6000
4000
2000
0
1000
td
OFF
t
E
F
ON
100
td
ON
t
E
OFF
R
10
0
20
40
60
80
100
0
20
40
60
80
100
I
(A)
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V
TJ = 150°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V
16000
10000
14000
E
OFF
td
12000
OFF
1000
10000
E
ON
8000
6000
4000
2000
0
t
F
100
t
R
td
ON
10
0
20
40
60
80
100
0
20
40
60
(Ω)
80
100
R
G
Rg (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
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5
IRG7PSH50UDPbF
70
70
60
50
40
30
20
10
60
Ω
5.0
R
G =
50
40
30
20
10
R
10Ω
47Ω
G =
G =
R
R
= 100Ω
G
0
20
40
60
80
100
0
20
40
60
(Ω)
80
100
I
(A)
R
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C
TJ = 150°C
60
50
40
30
20
9000
8000
7000
6000
5000
4000
3000
2000
1000
Ω
5.0
Ω
10
100A
Ω
47
50A
25A
Ω
100
0
200
400
600
800
1000
200
300
400
500
600
700
800
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 19 - Typ. Diode IRR vs. diF/dt
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 50A; TJ = 150°C
VCC = 600V; VGE = 15V; TJ = 150°C
2500
2000
1500
R
= 10Ω
G
R
R
= 5.0Ω
G
G
1000
500
0
= 47Ω
R
= 100Ω
G
0
20
40
60
80
100
I
(A)
F
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 150°C
6
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IRG7PSH50UDPbF
10000
1000
100
16
14
12
10
8
V
V
= 600V
= 400V
CES
CES
Cies
Coes
6
4
Cres
100
2
10
0
0
200
300
(V)
400
500
600
0
50
100
150
200
250
300
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22 - Typ. Capacitance vs. VCE
ICE = 50A
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.05
0.01
Ri (°C/W) τi (sec)
0.00463 0.000008
τ
τ
J τJ
τ
Cτ
0.02
0.07251 0.000209
0.11571 0.002880
0.07714 0.016543
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
0.01
0.001
Ri (°C/W) τi (sec)
0.02
0.01
0.00300 0.000014
τ
τ
J τJ
τ
Cτ
0.13485 0.000643
0.16061 0.004509
0.07121 0.023154
τ
1τ1
τ
τ
2 τ2
3τ3
4τ4
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRG7PSH50UDPbF
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
R = VCC
ICM
L
VCC
-5V
DUT
DUT /
DRIVER
VCC
Rg
Rg
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.3 - Switching Loss Circuit
C force
100K
D1 22K
C sense
DUT
G force
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
8
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IRG7PSH50UDPbF
1200
1000
800
600
400
200
0
120
1200
1000
800
600
400
200
0
120
100
80
60
40
20
0
tf
tr
100
TEST
CURRENT
80
90% test
current
60
90% ICE
40
10% test
current
5% VCE
5% ICE
5% VCE
20
0
Eon Los s
Eoff Loss
-200
-20
-200
-20
-3 -2 -1
0
1
2
3
4
5
-0.5
0
0.5
1
1.5
2
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
60
50
40
30
20
10
0
QRR
tRR
-10
Peak
IRR
-20
-30
-40
-50
-60
-0.40 -0.20 0.00 0.20
0.40 0.60
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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9
IRG7PSH50UDPbF
Case Outline and Dimensions — Super-247
Super-247 (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
PART NUMBER
INTERNATIONAL RECTIFIER
IRFPS37N50A
LOGO
719C
89
17
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
ASSEMBLY LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
TOP
Super-247 package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
10
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