IRGBC20SD2-EPBF [INFINEON]

Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-247AD;


型号：	IRGBC20SD2-EPBF
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-247AD 晶体二极管晶体管电动机控制双极性晶体管栅局域网超快软恢复二极管快速软恢复二极管
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中文：	中文翻译
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PD-9.1544

IRGBC20SD2

PROVISIONAL

Standard Speed CoPack

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

V_CES=600V

• Switching-loss rating includes all 'tail' losses

V_CE(

≤ 2.4V

SAT

• HEXFRED^TMsoft ultrafast diodes

)

• Optimized for line frequency operation (to 400HZ)

@V_GE= 15V, I_C= 10A

Description

n-cha nnel

Co-packaged IGBTs are a natural extension of

International Rectifier's well-known IGBT line. They

provide the convenience of an IBGT and an ultrafast

recovery diode in one package, resulting in

substantial benefits to a host of high-voltage, high-

current, motor control, UPS and power supply

applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

7.0

I_FM

± 20

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 100°C

T_J

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Min.

------

-----

Typ.

------

0.50

Max.

2.1

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

3.5

°C/W

------

-----

------

2 (0.07)

------

g (oz)

Revision 0:9/04/96

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IRGBC20SD2

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

600 ---- ----

Conditions

V_GE= 0V, I_C= 250µA

V_(BR)CES

Collector-to-Emitter Breakdown Voltage

∆V_(BR)CES/∆T Temperature Coeff. of Breakdown Voltage ---- 0.75 ---- V/°C V_GE= 0V, I_C= 1.0mA

V_CE(on)

Collector-to-Emitter Saturation Voltage

---- 1.8 2.4

---- 2.4 ----

---- 1.9 ----

3.0 ---- 5.5

I_C= 10A

V_GE= 15V

I_C= 19A

I_C= 10A, T_J= 150°C

V_CE= V_GE, I_C= 250µA

V_GE(th)

Gate Threshold Voltage

∆V_GE(th)/∆T_JTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C V_CE= V_GE, I_C= 250µA

g_fe

Forward Transconductance

2.0 5.8 ----

---- ---- 250

V_CE= 100V, I_C= 10A

V_GE= 0V, V_CE= 600V

I_CES

Zero Gate Voltage Collector Current

µA

---- ---- 1700

---- 1.4 1.7

---- 1.3 1.6

V_GE= 0V, V_CE= 600V, T_J= 150°C

I_C= 8.0A

V_FM

I_GES

Diode Forward Voltage Drop

I_C= 8.0A, T_J= 150°C

V_GE= ±20V

Gate-to-Emitter Leakage Current

---- ---- ±100 nA

Switching Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Q_g

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

RiseTime

---- 1.6 2.6

I_C= 10A

Qge

Q_gc

t_d(on)

t_r

---- 2.3 4.0

nC V_CC= 400V

---- 7.0

---- 72

---- 69

----

T_J= 25°C

I_C= 10A, V_CC= 480V

t_d(off)

t_f

Turn-Off Delay Time

FallTime

---- 820 ----

---- 910 ----

---- 0.70 ----

---- 3.9 ----

---- 4.6 ----

V_GE= 15V, R_G= 5.0Ω

Energy losses include "tail" and

diode reverse recovery.

E_on

E_off

E_ts

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

RiseTime

t_d(on)

t_r

t_d(off)

t_f

---- 78

---- 90

----

T_J= 150°C,

Turn-Off Delay Time

FallTime

---- 1100 ----

---- 1800 ----

---- 7.0 ----

---- 7.5 ----

---- 360 ----

V_GE= 15V, R_G= 50Ω

Energy losses include "tail" and

E_ts

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

mJ diode reverse recovery.

nH Measured 5mm from package

V_GE= 0V

L_E

C_ies

C_oes

C_res

t_rr

Output Capacitance

Reverse Transfer Capacitance

Diode Reverse Recovery Time

---- 36

----

V_CC= 30V

ƒ = 1.0MHz

T_J= 25°C

---- 5.2 ----

---- 37

---- 55

T_J= 125°C

T_J= 25°C

I_F= 8.0A

I_rr

Diode Peak Reverse Recovery Current ---- 3.5 5.0

---- 4.5 8.0

T_J= 125°C

V_R= 200V

di/dt 200A/µs

Q_rr

Diode Reverse Recovery Charge

---- 65 138

---- 124 360

nC T_J= 25°C

T_J= 125°C

di_(rec)M/dt

Diode Peak Rate of Fall of Recovery

During t_b

---- 240 ---- A/µs T_J= 25°C

---- 210 ----

T_J= 125°C

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IRGBC20SD2

8 0

6 0

4 0

2 0

F or b ot h:

T ria n g ula r w a v e :

D u ty c y c le : 5 0 %

1 2 5 °C

9 0° C

sink

G a te d riv e a s s p e c ifie d

P o w e r D is s ipa tio n

4 0W

C la m p v o lta g e:

8 0 % o f ra te d

S q u a re w a v e :

6 0 % o f ra te d

v oltag e

Id ea l diod es

0. 1

1 0

1 0 0

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I_RMSof fundamental)

1 0 0 0

1 0 0

1 0

1 0 0

= 25°C

T_J= 150°C

T_J= 25°C

1 0

V _{C C}= 10V

5µs PULSE WIDTH

V_{G E}= 15V

20µs PULSE WIDTH

1 0

1 2

0. 1

1 0

V , Gate-to-Emitter Voltage (V)

, Collector-to-Emitter Voltage (V)

C E

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

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IRGBC20SD2

4 0

3 0

2 0

1 0

2. 5

2. 0

1. 5

1. 0

V _{G E}= 15V

V_{G E}= 15V

80µs PULSE WIDTH

I _C= 40A

= 20A

= 10A

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

- 6 0

- 4 0

- 2 0

2 0

4 0

6 0

8 0

1 0 0 1 2 0 1 4 0 1 6 0

, Case Temperature (°C)

, Junction Temperature (°C)

Fig. 4 - Maximum Collector Current vs.

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

Junction Temperature

D = 0.50

0.20

0 .1

0.10

D M

0.05

SINGLE PULSE

(THERMAL RESPONSE)

0.02

0.01

N otes:

1 . D uty factor D

/ t

2 . Pea k T = P

x Z

+ T

D M

thJC

0.01

0.0000 1

0.0001

0.001

0.0 1

0.1

1 0

, R e ctan gu la r P ulse D ura tion (s ec )

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

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IRGBC20SD2

2 0

1 6

1 2

4 0 0 0

3 0 0 0

2 0 0 0

1 0 0 0

= 40 0V

= 20A

= 0V,

f = 1M Hz

G E

ie s

= C

+ C

SHORTE D

res

o es

ie s

o e s

re s

2 0

4 0

6 0

8 0

1 0 0

1 2 0

1 0

1 0 0

, Total Gate Cha rge (nC)

, Collecto r-to-Em itte r Volta ge (V)

Fig. 7 - Typical Capacitance vs.

Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage

Gate-to-Emitter Voltage

1 0

1. 8

1. 6

1. 4

1. 2

Ω

V_{C C}= 480V

V_{G E}= 15V

T _C= 25°C

I _C= 20A

R _G= 10

V _{G E}= 15V

V _{C C}= 480V

C = 40A

I _C= 20A

I _C= 10A

1. 0

0. 1

1 0

2 0

3 0

4 0

5 0

6 0

- 6 0

- 4 0

- 2 0

2 0

4 0

6 0

8 0

1 0 0 1 2 0 1 4 0 1 6 0

, Junction Temperature (°C)

, Gate Resistance (

)

Ω

Fig. 9 - Typical Switching Losses vs. Gate

Fig. 10 - Typical Switching Losses vs.

Resistance

Junction Temperature

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IRGBC20SD2

5. 0

1000

100

= 20V

= 125°C

R _G= 10

Ω

= 150°C

V _{C C}= 480V

V _{G E}= 15V

4. 0

3. 0

2. 0

1. 0

0. 0

S AFE OP ERATING AREA

100

1000

1 0

2 0

3 0

4 0

5 0

, C olle cto r-to-E m itte r V o lta g e (V )

, Collector-to-Emitter Current (A)

Fig. 12 - Turn-Off SOA

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1 0 0

1 0

= 150°C

= 125°C

25°C

0.8

1.2

1.6

2.0

2.4

F orwa rd Volta ge Drop - V

(V)

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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IRGBC20SD2

1 0 0

1 0

1 0 0

V_R= 200 V

T_J= 125 °C

T_J= 25°C

= 200V

= 125°C

= 25°C

8 0

= 30A

= 15A

6 0

= 15A

= 5.0A

4 0

= 5.0A

2 0

1 0 0

1 0 0 0

1 0 0

1 0 0 0

di /dt - (A/µs)

Fig. 15 - Typical Recovery Current vs. di_f/dt

Fig. 14 - Typical Reverse Recovery vs. di_f/dt

1 0 0 0

8 0 0

V_R= 200 V

T_J= 125 °C

T_J= 25°C

V_R= 200 V

T_J= 1 25 °C

T_J= 2 5°C

6 0 0

= 30A

= 5.0A

4 0 0

2 0 0

= 15A

= 30A

= 5.0A

1 0 0

1 0 0 0

di /d t - (A/µs )

d i /dt - (A/µs)

Fig. 16 - Typical Stored Charge vs. di_f/dt

Fig. 17 - Typical di_(rec)M/dt vs. di_f/dt

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IRGBC20SD2

90% Vge

+Vg e

Same type

Vce

device as

D.U.T.

90% Ic

10 % Vce

5% Ic

430µF

80%

of Vce

D.U.T.

td (off)

t1 +5µ S

Eoff =

Vce ic d t

Fig. 18a - Test Circuit for Measurement of

I_LM, E_on, E_off(diode), t_rr, Q_rr, I_rr, t_d(on), t_r, t_d(off), t_f

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

E_off, t_d(off), t_f

trr

id dt

trr

G ATE VO LTAGE D .U .T.

Qrr =

1 0% +Vg

+Vg

10 % Irr

10% Vcc

Vcc

DUT VOLTAGE

AN D C URR ENT

Vce

Vpk

Irr

10% Ic

Vcc

Ipk

9 0% Ic

DIODE RECOVERY

W AVEFORM S

5% Vce

td(on)

Eon = Vce ie dt

Erec =

Vd id d t

DIOD E REVERSE

REC OVER Y EN ER GY

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E_rec, t_rr, Q_rr, I_rr

Defining E_on, t_d(on), t_r

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IRGBC20SD2

GATE SIGN AL

DEVICE UNDER TEST

CURR EN T D .U .T.

VOL TAGE IN D.U.T.

CURR EN T IN D1

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

480V

4 X I_C@25°C

D.U.T.

R_L=

10 00V

V *

0 - 480V

50V

60 00µF

100 V

Figure 20. Pulsed Collector Current

Figure 19. Clamped Inductive Load Test

Test Circuit

Circuit

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IRGBC20SD2

Notes:

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Repetitiverating:V_GE=20V;pulsewidthlimitedbymaximumjunctiontemperature

V_CC=80%(V_CES), V_GE=20V, L=10µH, R_G= 50Ω

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

Pulse width 5.0µs, single shot.

Case Outline TO-247AC

NOTES:

D -

3.65 (.143)

3.55 (.140)

0.25 (.010)

D IMENSIONS & TOLERANCIN G

PER ANSI Y14.5M, 1982.

5.30 (.209)

4.70 (.185)

15.90 (.626)

15.30 (.602)

C ONTR OLLIN G D IM ENSION : INCH .

D IMENSIONS AR E SHOW N

M ILLIM ETERS (INCH ES).

C ONFORM S T O JED EC OU TLIN E

T O-247AC .

2.50 (.089)

1.50 (.059)

B -

- A

5.50 (.217)

20.30 (.800)

19.70 (.775)

5.50 (.217)

4.50 (.177)

2 X

LEAD ASSIGN MENT S

1 - GATE

2 - C OLLEC TOR

3 - EMITT ER

4 - C OLLEC TOR

C -

14.80 (.583)

14.20 (.559)

4.30 (.170)

3.70 (.145)

LONGER LEAD ED (20m m)

VER SION AVAILABLE (TO-247AD)

TO OR DER ADD "-E" SUF FIX

TO PART NUM BER

2.40 (.094)

0.80 (.031)

1.40 (.056)

1.00 (.039)

0.25 (.010)

2.00 (.079)

5.45 (.215)

0.40 (.016)

2.60 (.102)

2.20 (.087)

3.40 (.133)

3.00 (.118)

C ONFORM S TO J ED EC OUTLINE TO-247 AC (TO-3P)

D im en sion s in M illim ete rs a nd (Inc he s)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

9/96

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IRGBC20SD2-EPBF [INFINEON]

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