IRGIB10B60KD1P [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGIB10B60KD1P |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总13页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94913
IRGIB10B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
IC = 10A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.7V
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
• Lead-Free
G
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220
Full-Pak
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
600
V
VCES
Continuous Collector Current
16
IC @ TC = 25°C
Continuous Collector Current
10
A
IC @ TC = 100°C
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
32
ICM
32
16
ILM
IF @ TC = 25°C
10
IF @ TC = 100°C
32
IFM
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
2500
±20
V
VISOL
VGE
Maximum Power Dissipation
44
W
PD @ TC = 25°C
Maximum Power Dissipation
22
PD @ TC = 100°C
Operating Junction and
-55 to +175
TJ
Storage Temperature Range
°C
TSTG
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.4
Units
Junction-to-Case- IGBT
Rθ
JC
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
5.3
°C/W
RθJC
–––
62
Rθ
CS
RθJA
–––
g
Wt
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1
12/29/03
IRGIB10B60KD1P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
VGE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
600
—
—
V
∆
∆
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 10A, VGE = 15V, TJ = 25°C
IC = 10A, VGE = 15V, TJ = 150°C
IC = 10A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 250µA
V(BR)CES/ TJ
VCE(on)
VGE(th)
Temperature Coeff. of Breakdown Voltage
—
0.99
—
V/°C
1.50 1.70 2.10
Collector-to-Emitter Voltage
—
—
3.5
—
—
—
—
—
—
—
—
—
2.05 2.35
2.06 2.35
V
Gate Threshold Voltage
4.5
-10
5.0
1.0
90
5.5
—
V
mV/°C
S
V
/ T
∆
VCE = VGE, IC = 1mA (25°C-150°C)
∆
gfe
Threshold Voltage temp. coefficient
Forward Transconductance
GE(th)
J
VCE = 50V, IC = 10A, PW = 80µs
VGE = 0V, VCE = 600V
—
150
250
400
ICES
VFM
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 5.0A, VGE = 0V
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
µA
V
150
1.80 2.40
1.32 1.74
1.23 1.62
IF = 5.0A, VGE = 0V, TJ = 150°C
IF = 5.0A, VGE = 0V, TJ = 175°C
VGE = ±20V, VCE = 0V
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Qg
IC = 10A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
41
4.6
19
62
6.9
29
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
VCC = 400V
VGE = 15V
nC
µJ
ns
IC = 10A, VCC = 400V
156
165
321
25
264
273
434
33
VGE = 15V, RG = 50 , L = 1.07mH
Ω
Ls= 150nH, TJ = 25°C
IC = 10A, VCC = 400V
VGE = 15V, RG = 50 , L = 1.1mH
Ω
Rise time
24
34
td(off)
tf
Ls= 150nH, TJ = 25°C
Turn-Off delay time
180
62
250
87
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 10A, VCC = 400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
261
313
574
22
372
425
694
31
VGE = 15V, RG = 50Ω, L = 1.07mH
Ls= 150nH, TJ = 150°C
µJ
ns
IC = 8.0A, VCC = 400V
VGE = 15V, RG = 50Ω, L = 1.07mH
Ls= 150nH, TJ = 150°C
Rise time
24
34
td(off)
tf
Turn-Off delay time
240
48
340
67
Fall time
LE
Internal Emitter Inductance
Input Capacitance
7.5
610
66
—
nH Measured 5 mm from package
VGE = 0V
Cies
Coes
Cres
RBSOA
915
99
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
pF
23
35
f = 1.0MHz
TJ = 150°C, IC = 32A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50
TJ = 150°C, Vp = 600V, RG = 50Ω
VCC=360V,VGE = +15V to 0V
FULL SQUARE
Ω
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
ISC (PEAK)
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
—
—
100
99
—
A
µJ
ns
A
Erec
trr
TJ = 150°C
128
103
18
VCC = 400V, IF = 10A, L = 1.07mH
79
Irr
VGE = 15V, RG = 50
Ω
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
14
Qrr
553
719
nC di/dt = 500A/µs
Vcc =80% (VCES), VGE = 15V, L =100µH, RG = 50Ω.
Energy losses include "tail" and diode reverse recovery.
2
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IRGIB10B60KD1P
20
16
12
8
50
45
40
35
30
25
20
15
10
5
4
0
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10 µs
100 µs
10
1ms
DC
0.1
0.01
1
1
10
100
(V)
1000
10000
10
100
1000
V
CE
V
(V)
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 175°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRGIB10B60KD1P
20
20
18
16
14
12
10
8
V
= 18V
V
= 18V
GE
GE
18
16
14
12
10
8
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
6
4
4
2
2
0
0
0
2
4
6
0
2
4
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = -40°C; tp = 80µs
20
40
-40°C
25°C
150°C
18
16
14
12
10
8
V
= 18V
GE
35
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
30
25
20
15
10
5
6
4
2
0
0
0
2
4
6
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
V
(V)
V
CE
F
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 150°C; tp = 80µs
4
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IRGIB10B60KD1P
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 5.0A
= 10A
= 20A
I
I
I
= 5.0A
= 10A
= 20A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
20
18
16
14
12
10
8
100
90
80
70
60
50
40
30
20
10
0
T
T
= 25°C
J
J
= 150°C
I
I
I
= 5.0A
= 10A
= 20A
CE
CE
CE
6
T
= 150°C
4
J
2
T
= 25°C
15
J
0
5
10
15
20
0
5
10
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 150°C
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5
IRGIB10B60KD1P
700
1000
100
10
600
td
OFF
E
OFF
500
400
300
200
100
0
t
E
F
ON
td
ON
t
R
1
0
5
10
(A)
15
20
0
5
10
15
20
I
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.07mH; VCE= 400V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.07mH; VCE= 400V
RG= 50Ω; VGE= 15V
RG= 50Ω; VGE= 15V
10000
1000
100
1000
800
600
400
200
0
E
OFF
E
ON
td
OFF
t
F
t
R
td
ON
10
0
100
200
300
400
500
0
100
200
300
400
500
R
( )
Ω
R
( )
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.07mH; VCE= 400V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.07mH; VCE= 400V
ICE= 10A; VGE= 15V
ICE= 10A; VGE= 15V
6
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IRGIB10B60KD1P
15
10
5
16
14
12
10
8
R
R
50
Ω
G =
150
Ω
G =
R
270
Ω
G =
6
R
470
Ω
G =
4
2
0
0
0
5
10
15
20
0
100
200
300
400
500
I
(A)
R
(
Ω)
F
G
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C; IF = 10A
TJ = 150°C
1000
800
600
400
200
0
16
14
12
10
8
50
Ω
150
Ω
20A
270
Ω
10A
470
Ω
5.0A
6
4
2
0
0
100
200
300
400
500
600
0
200
400
600
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 10A; TJ = 150°C
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7
IRGIB10B60KD1P
200
160
120
470
270
150
50
Ω
Ω
Ω
80
40
Ω
0
5
10
15
20
25
I
(A)
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
16
1000
100
10
14
Cies
300V
12
10
8
400V
6
Coes
4
2
Cres
0
0
10
Q
20
30
40
50
1
10
100
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 10A; L = 2500µH
VGE= 0V; f = 1MHz
8
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IRGIB10B60KD1P
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.3628
0.2582
1.1008
1.6973
0.00018
0.000695
0.075305
1.781
τ
J τJ
τ
τ
Cτ
0.1
0.02
0.01
τ
1τ1
τ
τ
2 τ2
3τ3
4τ4
Ci= τi/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
0.20
0.10
0.05
1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.9004
1.3642
1.4540
1.5805
0.000103
0.000693
0.033978
1.6699
τ
τ
J τJ
τ
Cτ
τ
1τ1
τ
τ
2 τ2
3τ3
4τ4
0.02
0.01
0.1
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGIB10B60KD1P
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
I
CM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRGIB10B60KD1P
600
500
400
300
200
100
0
15
12.5
10
7.5
5
600
500
400
300
200
100
0
30
tf
25
Vce
Vce
Ice
tr
20
15
10
5
90% Ice
5% Vce
90% Ice
10% Ice
5% Ice
Ice
2.5
0
5% Vce
Eoff Loss
0
-100
-200
-2.5
-5
Eon
Loss
-100
-5
0.05
0.15
0.25
Time (uS)
0.35
0.4
0.6
0.8
1
1.2
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
400
300
200
100
0
200
150
100
50
100
15
10
5
QRR
0
RR
t
-100
-200
-300
0
-5
Peak
10% Peak
RR
I
RR
I
-400
-500
-600
-10
-15
-20
0
0.00
10.00
20.00
30.00
40.00
50.00
0.20
0.30
0.40
Time (uS)
0.50
0.60
Time (uS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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11
IRGIB10B60KD1P
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G
W IT H AS S E MB L Y
P AR T NU MB E R
DAT E CODE
L OT COD E 3432
IN T E R N AT ION AL
R E CT IF IE R
L OGO
IR F I840G
924K
AS S E MB L E D ON W W 24 1999
IN T H E AS S E MB L Y L IN E "K "
34
32
Note: "P" in assembly line
position indicates "Lead-Free"
YE AR
W E E K 24
L IN E
9 = 1999
AS S E MB L Y
L OT CODE
K
TO-220 Full-Pak package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
12
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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