IRGIB15B60KD1PPBF [INFINEON]
Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3;
| 型号： | IRGIB15B60KD1PPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 局域网 电动机控制 栅 晶体管 |
| 文件： | 总12页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 94914
IRGIB15B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
IC = 12A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.80V
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
• Lead-Free
G
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220
Full-Pak
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
600
V
IC @ TC = 25°C
19
IC @ TC = 100°C Continuous Collector Current
12
A
ICM
Pulse Collector Current (Ref.Fig.C.T.5)
38
Clamped Inductive Load current
Diode Continuous Forward Current
ILM
38
IF @ TC = 25°C
19
12
IF @ TC = 100°C Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
38
VISOL
VGE
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
2500
±20
V
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
52
W
26
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
2.9
Units
RθJC
Junction-to-Case- IGBT
RθJC
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
4.6
°C/W
RθCS
–––
62
RθJA
Wt
–––
g
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1
12/30/03
IRGIB15B60KD1P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 500µA
Ref.Fig.
V(BR)CES
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
—
—
—
V
∆V(BR)CES/∆TJ
VGE = 0V, IC = 1mA (25°C-150°C)
Temperature Coeff. of Breakdown Voltage
0.32
—
V/°C
IC = 15A, VGE = 15V, TJ = 25°C
IC = 15A, VGE = 15V, TJ = 150°C
IC = 15A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 250µA
1.80 2.20
2.05 2.50
2.10 2.60
5,6,7
VCE(on)
Collector-to-Emitter Voltage
V
9,10,11
VGE(th)
Gate Threshold Voltage
4.5
-10
10
5.5
—
V
mV/°C
S
9,10,11
12
∆VGE(th)/∆TJ
gfe
VCE = VGE, IC = 1mA (25°C-150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
VCE = 50V, IC = 15A, PW = 80µs
VGE = 0V, VCE = 600V
—
1.0
163
150
500
ICES
VFM
VGE = 0V, VCE = 600V, TJ = 150°C
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
µA
V
V
GE = 0V, VCE = 600V, TJ = 175°C
829 1800
1.69 2.30
1.31 1.75
1.25 1.65
IF = 15A, VGE = 0V
8
IF = 15A, VGE = 0V, TJ = 150°C
IF = 15A, VGE = 0V, TJ = 175°C
VGE = ±20V, VCE = 0V
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Ref.Fig.
23
Qg
IC = 15A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
56
7.0
26
84
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
VCC = 400V
VGE = 15V
10
nC
µJ
ns
CT1
39
IC = 15A, VCC = 400V
127
334
461
30
140
422
556
39
CT4
CT4
VGE = 15V, RG = 22Ω, L = 1.07mH
Ls= 150nH, TJ = 25°C
IC = 15A, VCC = 400V
VGE = 15V, RG = 22Ω, L = 1.07mH
Ls= 150nH, TJ = 25°C
Rise time
25
35
td(off)
tf
Turn-Off delay time
173
41
188
53
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 15A, VCC = 400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
258
570
829
30
282
646
915
39
CT4
13,15
WF1,WF2
14,16
CT4
VGE = 15V, RG = 22Ω, L = 1.07mH
Ls= 150nH, TJ = 150°C
µJ
ns
IC = 15A, VCC = 400V
VGE = 15V, RG = 22Ω, L = 1.07mH
Ls= 150nH, TJ = 150°C
Rise time
25
35
td(off)
tf
Turn-Off delay time
194
56
207
73
WF1
Fall time
WF2
LE
Internal Emitter Inductance
Input Capacitance
7.5
—
nH Measured 5 mm from package
GE = 0V
Cies
Coes
Cres
RBSOA
V
850 1275
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
100
32
150
48
pF
22
f = 1.0MHz
TJ = 150°C, IC = 38A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 22Ω
TJ = 150°C, Vp = 600V, RG = 22Ω
VCC=360V,VGE = +15V to 0V
FULL SQUARE
4
CT2
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
CT3
WF4
ISC (PEAK)
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
—
—
140
267
67
—
347
87
A
µJ
ns
A
WF4
Erec
trr
TJ = 150°C
17,18,19
20,21
CT4,WF3
V
CC = 400V, IF = 15A, L = 1.07mH
Irr
VGE = 15V, RG = 22Ω
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
23
30
Qrr
984 1279 nC di/dt = 875A/µs
Vcc =80% (VCES), VGE = 15V, L =100µH, RG = 22Ω.
Energy losses include "tail" and diode reverse recovery.
2
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IRGIB15B60KD1P
55
50
45
40
35
30
25
20
15
10
5
20
16
12
8
4
0
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10 µs
10
1
100 µs
1ms
10
DC
0.1
1
1
10
100
(V)
1000
10000
10
100
1000
V
CE
V
(V)
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRGIB15B60KD1P
20
18
16
20
18
16
14
12
10
8
V
= 18V
V
= 18V
14
12
10
8
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
6
4
4
2
2
0
0
0
2
4
6
0
2
4
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 60µs
TJ = -40°C; tp = 60µs
70
20
-40°C
25°C
150°C
18
16
14
12
10
8
60
50
40
30
20
10
0
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
4
2
0
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
0
2
4
6
V
V
(V)
F
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 60µs
TJ = 150°C; tp = 60µs
4
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IRGIB15B60KD1P
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 7.5A
= 15A
= 30A
I
I
I
= 7.5A
= 15A
= 30A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
20
18
16
14
12
10
8
70
60
50
40
30
20
10
0
T
T
= 25°C
J
J
= 150°C
I
I
I
= 7.5A
= 15A
= 30A
CE
CE
CE
6
T
= 150°C
J
4
T
= 25°C
2
J
0
5
10
15
20
0
5
10
15
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 150°C
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5
IRGIB15B60KD1P
1400
1200
1000
1000
100
10
td
OFF
E
OFF
800
600
400
200
0
t
F
E
ON
td
ON
t
R
1
0
5
10
15
(A)
20
25
30
0
5
10
15
(A)
20
25
30
I
C
I
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.07mH; VCE= 400V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.07mH; VCE= 400V
RG= 22Ω; VGE= 15V
RG= 22Ω; VGE= 15V
1200
1000
800
600
400
200
0
10000
1000
100
E
OFF
E
ON
td
OFF
t
F
td
ON
t
R
10
0
50
100
150
200
0
50
100
150
200
Ω
( )
R
Ω
( )
R
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.07mH; VCE= 400V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.07mH; VCE= 400V
ICE= 15A; VGE= 15V
ICE= 15A; VGE= 15V
6
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IRGIB15B60KD1P
25
20
15
10
5
24
20
16
12
8
Ω
Ω
R
R
= 22
= 47
G
G
Ω
R
= 100
= 200
G
Ω
R
G
4
0
0
0
5
10
15
(A)
20
25
30
0
40
80
120
Ω)
160
200
I
R
(
F
G
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C; IF = 15A
TJ = 150°C
24
20
16
12
8
1500
1000
500
0
30A
15A
7.5A
22
Ω
47
Ω
100
Ω
200
Ω
4
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 15A; TJ = 150°C
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7
IRGIB15B60KD1P
200
160
120
200
100
47
Ω
Ω
Ω
Ω
80
40
22
0
5
10
15
20
25
I
(A)
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
16
14
10000
1000
100
300V
12
400V
Cies
10
8
6
Coes
4
2
0
Cres
10
0
20
40
60
80
0
20
40
60
80
100
Q
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 15A; L = 2500µH
VGE= 0V; f = 1MHz
8
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IRGIB15B60KD1P
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
0.05
Ri (°C/W) τi (sec)
0.1
τ
JτJ
τ
τ
Cτ
0.437
1.087
1.376
0.000542
0.127526
2.702
0.02
0.01
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.05
0.02
0.01
Ri (°C/W) τi (sec)
0.8631
0.6432
1.1937
1.9013
0.000202
0.001053
0.055415
2.335
τ
0.1
τ
J τJ
τ
Cτ
τ
1τ1
τ
τ
2τ2
3τ3
4τ4
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGIB15B60KD1P
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRGIB15B60KD1P
600
500
400
300
200
100
0
30
25
20
15
10
5
800
700
600
500
400
300
200
100
0
40
35
tf
TEST CURRENT
30
tr
25
90% ICE
90% test current
20
15
5% VCE
5% ICE
10
10% test current
5% VCE
5
0
0
Eon Loss
-5
Eoff Loss
0.5
-100
-5
-100
0.1
0.3
0.7
0.2
0.4
0.6
time(µs)
time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
450
400
350
300
250
200
150
100
50
100
0
20
15
10
5
400
350
300
250
200
150
100
50
QRR
-100
-200
-300
-400
-500
-600
-700
-800
-900
tRR
0
-5
Peak
IRR
-10
-15
-20
-25
-30
10%
Peak
IRR
0
0
-50
0
10
20
30
40
50
0.10
0.20
0.30
time (µS)
0.40
0.50
Time (uS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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11
IRGIB15B60KD1P
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G
WIT H AS S E MB L Y
P AR T NU MB E R
DAT E CODE
L OT CODE 3432
INT E R NAT IONAL
R E CT IF IE R
L OGO
IR F I840G
924K
AS S E MB L E D ON WW 24 1999
IN T H E AS S E MB L Y L INE "K "
34
32
Note: "P" in assembly line
position indicates "Lead-Free"
YE AR
W E E K 24
L INE
9 = 1999
AS S E MB L Y
L OT CODE
K
TO-220 FullPak packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
12
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