IRGP4066PBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR;
| 型号： | IRGP4066PBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总10页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97577
IRGP4066PbF
INSULATED GATE BIPOLAR TRANSISTOR
IRGP4066-EPbF
Features
C
• Low VCE (ON) Trench IGBT Technology
VCES = 600V
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
IC(Nominal) = 75A
• SquareRBSOA
G
tSC ≥ 5μs, TJ(max) = 175°C
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• TightParameterDistribution
• LeadFreePackage
E
VCE(on) typ. = 1.7V
n-channel
C
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
E
E
C
C
G
G
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
TO-247AC
IRGP4066PbF
TO-247AD
IRGP4066-EPbF
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
600
140
V
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
90
75
ICM
ILM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
225
A
300
VGE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
±20
V
±30
PD @ TC = 25°C
454
W
PD @ TC = 100°C
227
TJ
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
–––
Max.
0.33
–––
40
Units
°C/W
RθJC
RθCS
RθJA
Thermal Resistance Junction-to-Case
–––
–––
–––
Thermal Resistance, Case-to-Sink (flat, greased surface)
0.24
–––
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
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10/8/2010
IRGP4066PbF/IRGP4066-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Min.
600
—
Typ.
—
Max. Units
Conditions
GE = 0V, IC = 100μA
V(BR)CES
V
—
V
mV/°C
V
ΔV(BR)CES/ΔTJ
VGE = 0V, IC = 2.0mA (25°C-175°C)
IC = 75A, VGE = 15V, TJ = 25°C
IC = 75A, VGE = 15V, TJ = 150°C
IC = 75A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 2.1mA
Temperature Coeff. of Breakdown Voltage
260
1.7
2.0
2.1
—
—
—
2.1
—
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
—
V
—
—
Gate Threshold Voltage
4.0
—
6.5
—
V
mV/°C
S
Δ
Δ
VGE(th)/ TJ
V
CE = VGE, IC = 2.1mA (25°C - 175°C)
VCE = 50V, IC = 75A, PW = 60μs
GE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
GE = ±20V
Threshold Voltage temp. coefficient
Forward Transconductance
-16
50
gfe
—
—
ICES
V
Collector-to-Emitter Leakage Current
—
1.0
1040
—
100
—
μA
—
IGES
V
Gate-to-Emitter Leakage Current
—
±200
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
150
40
Max. Units
225
Conditions
Qg
IC = 75A
GE = 15V
VCC = 400V
IC = 75A, VCC = 400V, VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
V
60
90
nC
μJ
ns
60
2465
2155
4620
50
3360
3040
6400
70
Ω
RG = 10 , L = 200μH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 75A, VCC = 400V, VGE = 15V
R
G = 10Ω, L = 200μH, TJ = 25°C
70
90
td(off)
tf
Turn-Off delay time
Fall time
200
60
225
80
Eon
Eoff
Etotal
td(on)
tr
IC = 75A, VCC = 400V, VGE=15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
3870
2815
6685
50
—
Ω
RG=10 , L=200μH,TJ = 175°C
—
μJ
ns
pF
Energy losses include tail & diode reverse recovery
IC = 75A, VCC = 400V, VGE = 15V
—
—
R
G = 10Ω, L = 200μH
70
—
td(off)
tf
TJ = 175°C
Turn-Off delay time
Fall time
240
70
—
—
Cies
Coes
Cres
VGE = 0V
Input Capacitance
4440
245
130
—
V
CC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
—
f = 1.0Mhz
TJ = 175°C, IC = 300A
VCC = 480V, Vp = 600V
Rg = 10Ω, VGE = +20V to 0V
VCC = 400V, Vp 600V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
5
—
—
μs
Ω
Rg = 10 , VGE = +15V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2
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IRGP4066PbF/IRGP4066-EPbF
140
120
100
80
400
300
200
100
0
60
40
20
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
1000
10
T
C
T
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
1000
10μsec
100
10
1
100μsec
100
10
1
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
(V)
1000
10
100
(V)
V
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
300
250
200
150
100
50
300
250
200
150
100
50
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
GE
V
GE
V
GE
V
GE
0
0
0
2
4
6
8
10
0
2
4
6
8
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = ≤60μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = ≤60μs
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3
IRGP4066PbF/IRGP4066-EPbF
300
20
18
16
14
12
10
8
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
250
200
150
100
50
I
I
I
= 38A
= 75A
= 150A
CE
CE
CE
6
4
2
0
0
0
2
4
6
8
10
5
10
15
20
V
(V)
GE
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = ≤60μs
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
20
18
16
14
12
20
18
16
14
12
10
8
I
I
I
= 38A
= 75A
= 150A
CE
CE
CE
I
I
I
= 38A
= 75A
= 150A
CE
CE
CE
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = 175°C
12000
10000
8000
6000
4000
2000
0
300
250
200
150
100
50
T
= 25°C
J
T
= 175°C
J
E
ON
E
OFF
0
4
6
8
10
12
14
16
18
0
25
50
75
(A)
100
125
150
V
Gate-to-Emitter Voltage (V)
GE,
I
C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 60μs
4
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IRGP4066PbF/IRGP4066-EPbF
11000
1000
100
10
9000
7000
td
OFF
t
F
E
ON
5000
td
E
ON
OFF
3000
1000
t
R
0
25
50
75
100
0
50
100
150
I
(A)
C
Rg (Ω)
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
800
600
400
200
0
20
15
10
5
10000
T
sc
1000
td
I
OFF
sc
t
F
t
R
100
td
ON
10
0
0
20
40
60
(Ω)
80
100
120
8
10
12
14
(V)
16
18
V
R
GE
G
Fig. 15 - Typ. Switching Time vs. RG
Fig. 16 - VGE vs. Short Circuit Time
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
VCC = 400V; TC = 25°C
10000
Cies
1000
Coes
100
Cres
10
0
100
200
V
300
(V)
400
500
CE
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
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5
IRGP4066PbF/IRGP4066-EPbF
16
V
= 400V
= 300V
14
12
10
8
CES
V
CES
6
4
2
0
0
20 40 60 80 100 120 140 160
, Total Gate Charge (nC)
Q
G
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 75A; L = 485μH
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01
0.02
0.01
τ
0.00738 0.000009
τ
J τJ
τ
Cτ
0.09441 0.000179
0.13424 0.002834
0.09294 0.0182
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
0.001
0.0001
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
6
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IRGP4066PbF/IRGP4066-EPbF
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
DC
DUT
VCC
DUT /
VCC
DRIVER
Rg
SCSOA
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
R = VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
Rg
0.0075μF
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.5 - Resistive Load Circuit
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7
IRGP4066PbF/IRGP4066-EPbF
600
500
400
300
200
100
0
120
100
80
60
40
20
0
600
500
400
300
200
100
0
120
100
80
60
40
20
0
tr
tf
TEST CURRENT
90% ICE
90% ICE
5% VCE
5% VCE
5% ICE
10% ICE
Eon
Eoff Loss
Loss
-100
-20
-100
-20
7.4E-06
7.7E-06
8.0E-06
8.3E-06
-3.0E-07 -1.0E-07 1.0E-07 3.0E-07
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
700
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
VCE
ICE
-100
-100
12
-3
0
3
6
9
Time (uS)
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
8
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IRGP4066PbF/IRGP4066-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRGP4066PbF/IRGP4066-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2010
10
www.irf.com
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