IRGP4068DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS; 超低VF二极管感应加热和软开关应用绝缘栅双极晶体管
| 型号： | IRGP4068DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS |
| 文件： | 总10页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97250
IRGP4068DPbF
INSULATEDGATEBIPOLARTRANSISTORWITHULTRA-LOWVFDIODE IRGP4068D-EPbF
FORINDUCTIONHEATINGANDSOFTSWITCHINGAPPLICATIONS
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
C
VCES = 600V
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
IC = 48A, TC = 100°C
• SquareRBSOA
G
tSC ≥ 5µs, TJ(max) = 175°C
• 100% of the parts tested for 4X rated current (ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF HyperfastDiode
• Tightparameterdistribution
)
E
VCE(on) typ. = 1.65V
n-channel
• LeadFreePackage
Benefits
C
C
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), Low Switching Losses
andUltra-lowVF
• RuggedtransientPerformanceforincreasedreliability
• ExcellentCurrentsharinginparalleloperation
• Low EMI
E
E
C
C
G
G
TO-247AC
IRGP4068DPbF
TO-247AD
IRGP4068D-EPbF
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
600
96
V
VCES
IC @ TC = 25°C
48
IC @ TC = 100°C
192
ICM
Clamped Inductive Load Current
Diode Continous Forward Current
192
A
ILM
8.0
IF @ TC = 160°C
IFSM
Diode Non Repetitive Peak Surge Current @ TJ = 25°C
Diode Peak Repetitive Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
175
16
IFM
±20
V
VGE
±30
330
W
PD @ TC = 25°C
Maximum Power Dissipation
170
PD @ TC = 100°C
Operating Junction and
-55 to +175
TJ
Storage Temperature Range
°C
TSTG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
80
Max.
0.45
2.0
Units
Rθ (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
°C/W
JC
Rθ (Diode)
JC
Rθ
–––
CS
Rθ
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
JA
1
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08/16/06
IRGP4068DPbF/IRGP4068D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
CT6
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 100µA
V(BR)CES
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
0.30
1.65
2.0
—
V
∆V(BR)CES/∆TJ
VGE = 0V, IC = 1mA (25°C-175°C)
IC = 48A, VGE = 15V, TJ = 25°C
IC = 48A, VGE = 15V, TJ = 150°C
IC = 48A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.4mA
Temperature Coeff. of Breakdown Voltage
CT6
—
V/°C
2.14
—
4,5,6
8,9,10
VCE(on)
Collector-to-Emitter Saturation Voltage
V
2.05
—
—
VGE(th)
∆VGE(th)/∆TJ
gfe
8,9
Gate Threshold Voltage
6.5
V
mV/°C
S
V
CE = VGE, IC = 1.0mA (25°C - 175°C)
VCE = 50V, IC = 48A, PW = 80µs
VGE = 0V, VCE = 600V
Threshold Voltage temp. coefficient
Forward Transconductance
-21
32
—
10,11
—
ICES
Collector-to-Emitter Leakage Current
1.0
150
1000
1.05
0.86
±100
µA
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 8.0A
450
0.96
0.81
—
VFM
IGES
Diode Forward Voltage Drop
V
7
IF = 8.0A, TJ = 150°C
V
GE = ±20V
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
18
Parameter
Total Gate Charge (turn-on)
Min. Typ. Max. Units
Conditions
Qg
IC = 48A
—
—
—
95
28
35
140
Qge
Qgc
VGE = 15V
CT1
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
42
nC
V
CC = 400V
53
IC = 48A, VCC = 400V, VGE = 15V
Ω
Eoff
R
G = 10 , L = 200µH,TJ = 25°C
CT4
Turn-Off Switching Loss
—
1275 1481
µJ
µJ
Energy losses include tail
td(off)
tf
IC = 48A, VCC = 400V, VGE = 15V
RG = 10Ω, L = 200µH,TJ = 25°C
IC = 48A, VCC = 400V, VGE = 15V
RG = 10Ω, L = 200µH,TJ = 175°C
Turn-Off delay time
Fall time
—
—
145
35
176
46
Eoff
CT4
WF1
17
Turn-Off Switching Loss
—
1585
—
µJ
µJ
Energy losses include tail
td(off)
tf
IC = 48A, VCC = 400V, VGE = 15V
Turn-Off delay time
Fall time
—
—
—
—
—
165
45
—
—
—
—
—
Ω
RG=10 , L=200µH, TJ = 175°C
Cies
Coes
Cres
VGE = 0V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3025
245
90
V
CC = 30V
pF
µs
f = 1.0Mhz
TJ = 175°C, IC = 192A
VCC = 480V, Vp =600V
3
CT2
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
Ω
Rg = 10 , VGE = +15V to 0V
VCC = 400V, Vp =600V
16, CT3
WF2
5
—
—
Ω
Rg = 10 , VGE = +15V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGP4068DPbF/IRGP4068D-EPbF
100
90
80
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
0
0
25 50 75 100 125 150 175 200
(°C)
0
25 50 75 100 125 150 175 200
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
200
1000
100
10
180
160
140
120
100
80
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
20
0
1
0
2
4
6
8
10
10
100
(V)
1000
V
CE
V
(V)
CE
Fig. 3 - Reverse Bias SOA
Fig. 4 - Typ. IGBT Output Characteristics
TJ = 175°C; VGE =15V
TJ = -40°C; tp = 80µs
200
180
160
140
120
100
80
200
V
= 18V
180
160
140
120
100
80
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = 175°C; tp = 80µs
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3
IRGP4068DPbF/IRGP4068D-EPbF
20
18
16
14
12
10
8
I
I
I
= 24A
= 48A
= 96A
CE
CE
CE
6
4
2
0
5
10
15
20
V
(V)
GE
Fig. 8 - Typical VCE vs. VGE
Fig. 7 - Typ. Diode Forward Voltage Drop
TJ = -40°C
Characteristics
20
18
16
14
12
20
18
16
14
12
10
8
I
I
I
= 24A
= 48A
= 96A
I
I
I
= 24A
CE
CE
CE
CE
CE
CE
= 48A
= 96A
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = 175°C
6000
5000
4000
3000
2000
1000
0
200
180
160
140
120
100
80
T = 25°C
J
T
= 175°C
J
E
OFF
60
40
20
0
0
25
50
(A)
75
100
0
5
10
15
V
(V)
GE
I
C
Fig. 11 - Typ. Transfer Characteristics
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
VCE = 50V; tp = 10µs
4
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IRGP4068DPbF/IRGP4068D-EPbF
5000
1000
100
10
4500
E
OFF
4000
3500
3000
2500
2000
1500
1000
td
OFF
t
F
0
25
50
75
100
125
0
20
40
60
80
100
I
(A)
C
Rg (Ω)
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
400
350
300
250
200
150
100
50
18
16
14
12
10
8
1000
td
OFF
T
sc
I
sc
100
t
F
6
4
10
8
10
12
14
(V)
16
18
0
25
50
75
100
125
V
Ω
( )
R
GE
G
Fig. 16 - VGE vs. Short Circuit
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
VCC = 400V; TC = 25°C
10000
16
14
12
10
8
V
V
= 300V
= 400V
Cies
CES
CES
1000
Coes
6
100
4
Cres
2
10
0
0
20
40
60
(V)
80
100
0
25
50
75
100
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 18 - Typical Gate Charge vs. VGE
Fig. 17 - Typ. Capacitance vs. VCE
ICE = 48A; L = 600µH
VGE= 0V; f = 1MHz
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5
IRGP4068DPbF/IRGP4068D-EPbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.0248
0.0652
0.1537
0.2065
0.000014
0.000050
0.001041
0.013663
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02
0.01
0.0400
0.7532
0.8317
0.3766
0.000030
0.000717
0.004860
0.036590
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
0.01
0.001
0.0001
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRGP4068DPbF/IRGP4068D-EPbF
L
L
80 V
VCC
DUT
DUT
480V
0
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
DIODE CLAMP /
DUT
L
4x
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
C force
400µH
R =
ICM
D1
10K
C sense
DUT
VCC
G force
DUT
0.0075µ
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
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7
IRGP4068DPbF/IRGP4068D-EPbF
700
600
500
400
300
200
100
0
140
120
100
80
600
500
400
300
200
100
0
600
500
400
300
200
100
0
ICE
VCE
tf
60
90% ICE
5% VCE
40
20
5% ICE
EOFF Loss
0.60
0
-100
-100
-100
-20
-5.00
0.00
5.00
10.00
-0.40
0.10
1.10
Time(µs)
time (µS)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 25°C using Fig. CT.3
8
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IRGP4068DPbF/IRGP4068D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
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9
IRGP4068DPbF/IRGP4068D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/06
10
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相关型号：
IRGP4078D-EPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
INFINEON
IRGP4078DPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
INFINEON
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