IRGP4660DPBF [INFINEON]
INDUSTRIAL MOTOR DRIVE, INVERTERS; 工业电机驱动,逆变器型号: | IRGP4660DPBF |
厂家: | Infineon |
描述: | INDUSTRIAL MOTOR DRIVE, INVERTERS |
文件: | 总12页 (文件大小:348K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRGP4660DPbF
IRGP4660D-EPbF
INSULATEDGATEBIPOLARTRANSISTORWITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
C
C
C
IC = 60A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.60V @ IC = 48A
G
E
E
C
C
G
G
E
TO-247AC
IRGP4660DPbF
TO-247AD
n-channel
IRGP4660D-EP
Applications
• Industrial Motor Drive
• Inverters
G
Gate
C
E
Collector
Emitter
• UPS
• Welding
Features
Benefits
High efficiency in a wide range of applications and switching
frequencies
Low VCE(ON) and Switching Losses
Improved reliability due to rugged hard switching performance
and higher power capability
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Excellent current sharing in parallel operation
5μs short circuit SOA
Lead-Free, RoHS compliant
Enables short circuit protection scheme
Environmentally friendly
Standard Pack
Form
Base part number
Package Type
Orderable part number
Quantity
IRGP4660DPbF
IRGP4660D-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4660DPbF
IRGP4660D-EPbF
Absolute Maximum Ratings
Parameter
Max.
600
Units
VCES
Collector-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Continuous Collector Current
100
Continuous Collector Current
60
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
144
I
192
A
LM
IF @ TC = 25°C
100
IF @ TC = 100°C
60
IFM
192
VGE
±20
V
±30
PD @ TC = 25°C
330
W
PD @ TC = 100°C
Maximum Power Dissipation
170
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.45
0.92
–––
Units
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
R (IGBT)
°C/W
JC
R (Diode)
JC
R
Case-to-Sink (flat, greased surface)
CS
R
Junction-to-Ambient (typical socket mount)
40
JA
www.irf.com © 2012 International Rectifier
January 8, 2013
1
IRGP4660DPbF/IRGP4660D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
0.30
1.60
1.90
2.00
—
—
—
V
VGE = 0V, IC = 150μA
Col lector-to-E mi tter B reakdown Voltage
T emperature Coeff. of B reakdown Voltage
V(BR)CES/ T J
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
IC = 48A, VGE = 15V, TJ = 25°C
1.90
—
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
IC = 48A, VGE = 15V, TJ = 150°C
IC = 48A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.4mA
—
Gate Threshold Voltage
6.5
—
V
VGE (t h)/ T J
Threshold Voltage temp. coefficient
Forward Transconductance
-21
32
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
VCE = 50V, IC = 48A, PW = 80μs
gfe
—
S
ICES
Collector-to-Emitter Leakage Current
1.0
150
1000
2.91
—
μA VGE = 0V, VCE = 600V
450
1.95
1.45
—
VGE = 0V, VCE = 600V, TJ = 175°C
VFM
Diode Forward Voltage Drop
V
IF = 48A
IF = 48A, TJ = 175°C
IGES
Gate-to-Emitter Leakage Current
±100
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
95
28
140
42
IC = 48A
nC VGE = 15V
VCC = 400V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
35
53
625
1141
IC = 48A, VCC = 400V, VGE = 15V
1275 1481
1900 2622
μJ
RG = 10 , L = 200μH, LS = 150nH, TJ = 25°C
E nergy los s es include tail & diode revers e recovery
60
40
78
56
176
46
—
—
—
—
—
—
—
—
—
—
IC = 48A, VCC = 400V, VGE = 15V
ns
RG = 10 , L = 200μH, LS = 150nH, TJ = 25°C
td(off)
tf
Turn-Off delay time
Fall time
145
35
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
1625
1585
3210
55
IC = 48A, VCC = 400V, VGE=15V
μJ
RG=10 , L=200μH, LS=150nH, TJ = 175°C
E nergy los s es include tail & diode revers e recovery
IC = 48A, VCC = 400V, VGE = 15V
45
ns
RG = 10 , L = 200μH, LS = 150nH
td(off)
tf
Turn-Off delay time
Fall time
165
45
TJ = 175°C
Cies
Coes
Cres
Input Capacitance
3025
245
90
pF VGE = 0V
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
f = 1.0Mhz
TJ = 175°C, IC = 192A
VCC = 480V, Vp =600V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
Rg = 10 , VGE = +15V to 0V
5
—
—
μs
VCC = 400V, Vp =600V
Rg = 10 , VGE = +15V to 0V
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
845
115
40
—
—
—
μJ
ns
A
TJ = 175°C
VCC = 400V, IF = 48A
Irr
Peak Reverse Recovery Current
VGE = 15V, Rg = 10 , L =200μH, Ls = 150nH
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
www.irf.com © 2012 International Rectifier
January 8, 2013
2
IRGP4660DPbF/IRGP4660D-EPbF
100
80
60
40
20
0
350
300
250
200
150
100
50
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
1000
10μsec
100
100
10
1
100μsec
1msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
10
100
(V)
1000
V
(V)
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
200
180
160
140
120
100
80
200
180
160
140
120
100
80
V
= 18V
GE
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
3
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
200
180
160
140
120
100
80
200
180
160
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
140
-40°c
25°C
175°C
120
100
80
60
40
20
0
60
40
20
0
0
2
4
6
8
10
0.0
1.0
2.0
(V)
3.0
4.0
V
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
20
18
16
14
12
20
18
16
14
12
I
I
I
= 24A
= 48A
= 96A
I
I
I
= 24A
= 48A
= 96A
CE
CE
CE
CE
CE
CE
10
8
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
20
18
16
14
12
10
8
200
180
160
140
120
100
80
T
= 25°C
J
T
= 175°C
J
I
I
I
= 24A
CE
CE
CE
= 48A
= 96A
6
60
4
40
2
20
0
0
5
10
15
20
0
5
10
15
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
CE = 50V; tp = 10μs
TJ = 175°C
V
www.irf.com © 2012 International Rectifier
January 8, 2013
4
IRGP4660DPbF/IRGP4660D-EPbF
6000
5000
4000
3000
2000
1000
0
1000
E
OFF
td
OFF
E
100
ON
td
ON
t
F
t
R
10
0
50
100
150
0
20
40
60
80
100
I
(A)
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
5000
1000
4500
td
OFF
E
OFF
4000
E
t
ON
R
3500
3000
2500
2000
1500
1000
td
ON
100
t
F
10
0
25
50
75
100
125
0
25
50
75
()
100
125
R
G
Rg ()
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
45
45
40
40
35
30
25
20
15
10
R
10
G =
R
35
30
25
20
15
10
5
22
G =
47
R
G =
100
R
G =
0
0
20
40
60
80
100
0
25
50
75
100
125
I
(A)
R
(
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
TJ = 175°C
5
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
45
40
35
30
25
20
15
10
4000
3500
96A
3000
10
48A
2500
2000
1500
1000
100
22
47
24A
0
500
1000
1500
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 20 - Typ. Diode QRR vs. diF/dt
CC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
V
400
350
300
250
200
150
100
50
900
800
18
16
14
12
10
8
R
R
= 10
= 22
G
700
600
500
400
300
200
100
0
G
R
G
= 47
G
R
= 100
6
4
0
20
40
60
80
100
8
10
12
14
(V)
16
18
I
(A)
V
F
GE
Fig. 22 - VGE vs. Short Circuit Time
Fig. 21 - Typ. Diode ERR vs. IF
VCC = 400V; TC = 25°C
TJ = 175°C
10000
1000
100
16
14
12
10
8
V
V
= 300V
= 400V
Cies
CES
CES
Coes
Cres
6
4
2
10
0
0
20
40
60
(V)
80
100
0
25
50
75
100
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
www.irf.com © 2012 International Rectifier
January 8, 2013
6
IRGP4660DPbF/IRGP4660D-EPbF
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) i (sec)
0.0872 0.000114
0.1599 0.001520
0.02
0.01
0.01
J J
C
11
2 2
33
0.2020 0.020330
SINGLE PULSE
( THERMAL RESPONSE )
Ci= iRi
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
Ri (°C/W) i (sec)
0.2774 0.000908
0.02
0.01
J J
C
0.01
0.001
0.0001
11
2 2
33
0.3896 0.003869
0.2540 0.030195
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
Rg
DC
DUT
VCC
DUT /
DRIVER
VCC
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
Rg
0.0075μF
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.5 - Resistive Load Circuit
www.irf.com © 2012 International Rectifier
January 8, 2013
8
IRGP4660DPbF/IRGP4660D-EPbF
700
600
500
400
300
200
100
0
140
120
100
80
700
600
500
400
300
200
100
0
140
120
100
80
tr
TEST
CURRENT
tf
60
60
90% test
90% ICE
40
40
5% VCE
10% test
current
5% VCE
20
20
5% ICE
0
0
EOFF Loss
0.60
EON
-100
-20
-100
-20
-0.40
0.10
1.10
6.20
6.40
6.60
6.80
7.00
Time(µs)
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
500
400
300
200
100
0
600
60
50
40
500
400
300
200
100
0
ICE
VCE
QRR
30
20
10
tRR
0
-10
-20
-30
-40
10%
Peak
IRR
Peak
IRR
-100
-100
-0.15 -0.05 0.05
0.15
0.25
-5.00
0.00
5.00
10.00
time (µS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 175°C using Fig. CT.4
9
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2012 International Rectifier
January 8, 2013
10
IRGP4660DPbF/IRGP4660D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4660DPbF/IRGP4660D-EPbF
Qualification Information†
Qualification Level
Industrial
(per International Rectifier’s internal guidelines)
Moisture Sensitivity Level
TO-247AC
TO-247AD
N/A
N/A
Class 2 (+/- 4000V )††
Human Body Model
(per JEDEC JESD22-A114)
ESD
Class IV (+/- 1125V )††
Charged Device Model
(per JEDEC JESD22-C101)
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Highest passing voltage.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
www.irf.com © 2012 International Rectifier
January 8, 2013
12
相关型号:
©2020 ICPDF网 联系我们和版权申明